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44 条记录 (耗时 0.037 秒)

    Halogen-assisted chemical vapor deposition of diamond
    1.
    发明授权
    Halogen-assisted chemical vapor deposition of diamond 失效
    金属辅助化学气相沉积金刚石

    公开(公告)号：US5071677A

    公开(公告)日：1991-12-10

    申请号：US528804

    申请日：1990-05-24

    申请人： Donald E. Patterson ,  Robert H. Hauge ,  C. Judith Chu ,  John L. Margrave

    发明人： Donald E. Patterson ,  Robert H. Hauge ,  C. Judith Chu ,  John L. Margrave

    IPC分类号： C23C16/26 ,  C23C16/27

    CPC分类号： C23C16/27 ,  C23C16/277 ,  Y10S427/103

    摘要： The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen and (3) a halogen through a reactor over the substrate material. The reactant gases may be pre-mixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pre-treatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.The reactant gas mixture preferably is passed through a reactor, a first portion of which is heated to a temperature of from about 400.degree. C. to about 920.degree. C. and more preferably from about 800.degree. C. to about 920.degree. C. The substrate on which the diamond is to be grown is placed in the reactor in a zone that is maintained at a lower temperature of from about 250.degree. C. to about 750.degree. C., which is the preferred diamond growth temperature range. The process preferably is practiced at ambient pressures, although lower or higher pressures may be used. Significant amounts of pure diamond films and particles have been obtained in as little as eight hours. The purity of the diamond films and particles has been verified by Raman spectroscopy and powder x-ray diffraction techniques.

    摘要翻译： 本发明涉及通过使能够（1）碳，（2）氢和（3）卤素的气体或气体混合物通过反应器流过衬底的方式将金刚石膜和颗粒沉积在各种衬底上的方法 材料。 反应物气体可以与惰性气体预混合，以便使总体气体混合物组合物的碳体积百分比低并富含氢气。 不需要将反应物气体预处理至高能量状态，如在金刚石的化学气相沉积的大多数现有技术方法中。 由于不需要预处理，所以该方法可以应用于几乎任何所需尺寸，形状或构型的基底。 反应气体混合物优选通过反应器，其第一部分被加热到约400℃至约920℃，更优选约800℃至约920℃的温度。 将金刚石生长在其上的底物置于反应器中，该区域保持在约250℃至约750℃的较低温度，这是优选的金刚石生长温度范围。 该方法优选在环境压力下实施，尽管可以使用更低或更高的压力。 在短短8小时内就已经获得了大量的纯金刚石膜和颗粒。 通过拉曼光谱和粉末X射线衍射技术验证了金刚石膜和颗粒的纯度。

    Halogen-assisted chemical vapor deposition of diamond
    2.
    发明授权
    Halogen-assisted chemical vapor deposition of diamond 失效
    金刚石辅助化学气相沉积

    公开(公告)号：US5316795A

    公开(公告)日：1994-05-31

    申请号：US696769

    申请日：1991-05-07

    申请人： Donald E. Patterson ,  Robert H. Hauge ,  C. Judith Chu ,  John L. Margrave

    发明人： Donald E. Patterson ,  Robert H. Hauge ,  C. Judith Chu ,  John L. Margrave

    IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/00

    CPC分类号： C23C16/27 ,  C23C16/277 ,  Y10S427/103 ,  Y10T428/30

    摘要： The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen, (3) a halogen and, preferably, (4) a chalcogen through a reactor over the substrate material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pretreatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.

    摘要翻译： 本发明涉及一种通过使能够供应（1）碳，（2）氢，（3）卤素和（4）卤素的气体或气体混合物的气体或气体混合物，优选地（4） ）硫属元素通过基底材料上的反应器。 反应物气体可以与惰性气体预混合，以保持总体气体混合物组合物的体积百分比低且富含氢气。 不需要将反应物气体预处理至高能量状态，如在金刚石的化学气相沉积的大多数现有技术方法中。 由于不需要预处理，所以该方法可以应用于几乎任何所需尺寸，形状或构型的基底。

    Method for cutting single-wall carbon nanotubes through fluorination
    3.
    发明授权
    Method for cutting single-wall carbon nanotubes through fluorination 失效
    通过氟化法切割单壁碳纳米管的方法

    公开(公告)号：US07029646B2

    公开(公告)日：2006-04-18

    申请号：US10408886

    申请日：2003-04-08

    申请人： John L. Margrave ,  Zhenning Gu ,  Robert H. Hauge ,  Richard E. Smalley

    发明人： John L. Margrave ,  Zhenning Gu ,  Robert H. Hauge ,  Richard E. Smalley

    IPC分类号： D01F9/12

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B32/176 ,  C01B2202/02

    摘要： A method for cutting single-wall carbon nanotubes involves partially fluorinating single-wall carbon nanotubes and pyrolyzing the partially fluorinated nanotubes in an inert atmosphere or vacuum up to about 1000° C. The nanotubes are optionally purified before cutting. The partial fluorination involves fluorinating the nanotubes to a carbon-fluorine stoichiometry of CFx, where x is up to about 0.3. The invention also relates to the derivatization of fluorinated and cut single-wall carbon nanotubes. The single-wall carbon nanotubes can be cut to any length depending on the fluorination and pyrolysis conditions. Short nanotubes are useful in various applications, such as field emitters for flat panel displays and as “seeds” for further nanotube growth.

    摘要翻译： 用于切割单壁碳纳米管的方法涉及部分氟化单壁碳纳米管并在惰性气氛或真空中高达约1000℃热解部分氟化的纳米管。在切割之前，任选地提纯纳米管。 部分氟化涉及将纳米管氟化为CF x的碳氟化学计量，其中x为约0.3。 本发明还涉及氟化和切割的单壁碳纳米管的衍生化。 根据氟化和热解条件，可以将单壁碳纳米管切割成任何长度。 短纳米管在各种应用中是有用的，例如用于平板显示器的场发射器和用于进一步的纳米管生长的“种子”。

    Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects
    4.
    发明授权
    Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects 失效
    同时测量远程物体的发射率和热力学温度的方法和装置

    公开(公告)号：US5011295A

    公开(公告)日：1991-04-30

    申请号：US422644

    申请日：1989-10-17

    申请人： Shankar Krishnan ,  George P. Hansen ,  Robert H. Hauge ,  John L. Margrave ,  Charles A. Rey

    发明人： Shankar Krishnan ,  George P. Hansen ,  Robert H. Hauge ,  John L. Margrave ,  Charles A. Rey

    IPC分类号： G01J4/00 ,  G01J5/00 ,  G01J5/58 ,  G01N21/21

    CPC分类号： G01J5/58 ,  G01J4/04 ,  G01J5/0003 ,  G01J5/0096 ,  G01J5/04 ,  G01J5/047 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0825 ,  G01J5/0834 ,  G01J5/0846 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0074 ,  G01J2005/0077 ,  G01N2021/1793 ,  G01N21/21 ,  G01N2201/0696

    摘要： Method and apparatus for accurately and instantaneously determining the thermodynamic temperature of remote objects by continuous determination of the emissivity, the reflectivity, and optical constants, as well as the apparent or brightness temperature of the sample with a single instrument. The emissivity measurement is preferably made by a complex polarimeter including a laser that generates polarized light, which is reflected from the sample into a detector system. The detector system includes a beamsplitter, polarization analyzers, and four detectors to measure independently the four Stokes vectors of the reflected radiation. The same detectors, or a separate detector in the same instrument, is used to measure brightness temperature. Thus, the instrument is capable of measuring both the change in polarization upon reflection as well as the degree of depolarization and hence diffuseness. This enables correction for surface roughness of the sample and background radiation, which could otherwise introduce errors in temperature measurement.

    摘要翻译： 通过用单个仪器连续测定样品的发射率，反射率和光学常数以及样品的表观或亮度温度来准确和瞬时地确定远程物体的热力学温度的方法和设备。 发射率测量优选由包括产生偏振光的激光器的复合旋光计来进行，该偏振光从样品反射到检测器系统中。 检测器系统包括分束器，偏振分析器和四个检测器，以独立地测量反射辐射的四个斯托克斯矢量。 相同的检测器或相同仪器中的单独检测器用于测量亮度温度。 因此，该仪器能够测量反射时的极化的变化以及去极化的程度，从而测量扩散度。 这样可以校正样品的表面粗糙度和背景辐射，否则会导致温度测量误差。