Organization for dynamic random access memory
    1.
    发明授权
    Organization for dynamic random access memory 失效
    组织动态随机存取存储器

    公开(公告)号:US4241425A

    公开(公告)日:1980-12-23

    申请号:US10839

    申请日:1979-02-09

    摘要: An MOS dynamic random access memory (RAM) includes an array of memory cells arranged in rows and columns. The array is divided into two or more sub-arrays. In an operating cycle where a cell is being accessed for reading and/or writing, only the sub-array containing the accessed cell is fully selected while the other sub-arrays are partially selected. A fully selected sub-array is one in which both a row and a column are selected, whereas in a partially selected sub-array, only a row is selected. In the partially selected sub-array where only refreshing of the cells in the selected row takes place, the column decoders and drivers remain inactive throughout the memory cycle.

    摘要翻译: MOS动态随机存取存储器(RAM)包括以行和列排列的存储器单元阵列。 阵列分为两个或更多个子阵列。 在读取和/或写入单元格的操作周期中,只有包含被访问单元格的子阵列被完全选择,而其他子阵列被部分选择。 完全选择的子数组是选择行和列的子数组,而在部分选择的子数组中,只选择一行。 在部分选择的子阵列中,只有刷新所选行中的单元格,列解码器和驱动器在整个存储器周期中保持不活动。

    Dynamic RAM organization for reducing peak current
    2.
    发明授权
    Dynamic RAM organization for reducing peak current 失效
    用于降低峰值电流的动态RAM组织

    公开(公告)号:US4222112A

    公开(公告)日:1980-09-09

    申请号:US10741

    申请日:1979-02-09

    摘要: An MOS dynamic random access memory (RAM) includes an array of memory cells arranged in rows and columns. The array is divided into two or more sub-arrays. During an operating cycle latching of the sense amplifiers in the sub-arrays is staggered to avoid coincidence of current peaks each arising when the sense amplifiers in one of the sub-arrays are simultaneously latched. Latching takes place first in a sub-array in which a cell is selected. Recovery of the column conductors in the sub-arrays is also staggered to avoid coincidence of current peaks each occurring when one of the sub-arrays is recovered. The sub-array in which a cell is selected is recovered last.

    摘要翻译: MOS动态随机存取存储器(RAM)包括以行和列排列的存储器单元阵列。 阵列分为两个或更多个子阵列。 在操作周期期间,子阵列中的读出放大器的锁存是交错的,以避免当一个子阵列中的读出放大器同时锁存时出现的当前峰值的一致。 首先在选择单元格的子阵列中进行锁存。 子阵列中的列导体的恢复也是交错的,以避免当其中一个子阵列被恢复时出现的当前峰值的一致。 最后恢复选择单元格的子阵列。

    Sense amplifier
    3.
    发明授权
    Sense amplifier 失效
    感应放大器

    公开(公告)号:US4274013A

    公开(公告)日:1981-06-16

    申请号:US10740

    申请日:1979-02-09

    CPC分类号: G11C11/4063 G11C11/4091

    摘要: An improved field effect transistor sense amplifier uses a cross-coupled pair of first transistors (Q1, Q2) with separate third and fourth transistors (Q3, Q4) connected by the sources (12, 14) to each of one of cross-coupled terminals (12, 14) of the cross-coupled pair (Q1, Q2). Read circuitry (Q7, Q8) is connected directly to the cross-coupled terminals (12, 14) of the cross-coupled pair (Q1, Q2). Write circuitry (Q9, Q10) is connected to the drains (18, 22) of the third and fourth transistors (Q3, Q4).

    摘要翻译: 改进的场效应晶体管读出放大器使用具有由源极(12,14)连接到交叉耦合端子中的每一个的单独的第三和第四晶体管(Q3,Q4)的交叉耦合的第一晶体管(Q1,Q2) (Q1,Q2)的交叉耦合对(12,14)。 读取电路(Q7,Q8)直接连接到交叉耦合对(Q1,Q2)的交叉耦合端子(12,14)。 写入电路(Q9,Q10)连接到第三和第四晶体管(Q3,Q4)的漏极(18,22)。

    Byte organized static memory
    4.
    发明授权
    Byte organized static memory 失效
    字节组织静态内存

    公开(公告)号:US4599709A

    公开(公告)日:1986-07-08

    申请号:US581289

    申请日:1984-02-17

    申请人: Donald G. Clemons

    发明人: Donald G. Clemons

    CPC分类号: G11C29/808 G11C7/18 G11C8/12

    摘要: A static random access memory arrangement provides for accessing a desired number of bits (i.e., a byte) simultaneously by placing the accessed columns adjacent one another. For example, if the memory provides 8 bits when accessed, then a group of 8 adjacent columns is addressed, whereas the prior art provided for accessing one column out of each of 8 separate groups. The present scheme provides for improved utilization of spare columns for redundancy purposes, and also allows for partial row selection for reduced power consumption and noise.

    摘要翻译: 静态随机存取存储器装置通过将所访问的列相互邻近地同时地访问期望数量的位(即,一个字节)。 例如,如果存储器在访问时提供8位,则寻址一组8个相邻列,而现有技术提供用于从8个单独的组中的每一个中访问一列。 本方案提供用于冗余目的的备用列的改进的利用,并且还允许部分行选择以减少功耗和噪声。

    CMOS spare decoder circuit
    5.
    发明授权
    CMOS spare decoder circuit 失效
    CMOS备用解码电路

    公开(公告)号:US4590388A

    公开(公告)日:1986-05-20

    申请号:US602680

    申请日:1984-04-23

    CPC分类号: G11C29/83

    摘要: A spare decoder provides for the substitution of a spare component for repair of a defective semiconductor chip. For example, a spare row or column of memory cells can be substituted for a defective row or column of a memory chip by fusing fusible links in the decoder. The present invention implements the decoder in CMOS technology. To minimize power consumption, means are included for preventing current flow in an unused spare without having to fuse a link.

    摘要翻译: 备用解码器提供替换备件以修复缺陷半导体芯片。 例如,通过将解码器中的可熔链路融合,可以将存储器单元的备用行或列替代存储器芯片的有缺陷的行或列。 本发明实现了CMOS技术中的解码器。 为了最小化功率消耗,包括用于防止未使用的备用电流的流动,而不必熔断链路。