公开(公告)号：US08445941B2

公开(公告)日：2013-05-21

申请号：US12462515

申请日：2009-08-05

申请人： Dong Xu ,  Xiaoping S. Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

发明人： Dong Xu ,  Xiaoping S. Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

IPC分类号： H01L21/335 ,  H01L29/778

CPC分类号： H01L29/66431 ,  H01L29/7784 ,  H01L29/7785

摘要： A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

公开(公告)号：US20100301395A1

公开(公告)日：2010-12-02

申请号：US12462515

申请日：2009-08-05

申请人： Dong Xu ,  Xiaoping Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

发明人： Dong Xu ,  Xiaoping Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66431 ,  H01L29/7784 ,  H01L29/7785

摘要： A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

摘要翻译： 高功率和高增益超短栅极HEMT器件具有特别的增益和由栅极电极的增加宽度不对称凹槽提供的异常高的击穿电压，通过复合沟道层，其包括嵌入在铟中的薄的砷化铟层 砷化镓沟道层，并通过使用额外的硅掺杂尖峰进行双掺杂。 改进的晶体管在110 GHz时具有超强的14 dB增益，并具有极高的3.5-4 V击穿电压，从而在超短栅极器件中提供高增益，大功率和超高频。

公开(公告)号：US20080241757A1

公开(公告)日：2008-10-02

申请号：US12079529

申请日：2008-03-27

申请人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

发明人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

IPC分类号： G03F7/20

CPC分类号： H01L21/28581 ,  H01L21/0272

摘要： A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylglutarimide (PMGI) in the middle, and PMMA with low molecular weight on the top; (b) in a first exposure, exposing and developing the layers with a dose of a developer that is high enough to allow the developer to break the top PMMA but low to avoid contributing significantly to the overall dose received in the bottom PMMA layer; and (c) in a second exposure, using an exposure and developing process to define 0.03-0.05 um openings in the bottom PMMA layer.

摘要翻译： 一种用于在异质结场效应晶体管（HFET）上制造超短T栅极的方法，包括以下步骤：（a）提供三层抗蚀剂的涂层与底部具有高分子量的聚甲基丙烯酸甲酯（PMMA），聚二甲基戊二酰亚胺（PMGI ），顶部分子量低的PMMA; （b）在第一次曝光中，用一定剂量的显影剂曝光和显影层，以使得显影剂能够破坏顶部PMMA但是低，以避免对底部PMMA层中所接收的总剂量产生显着影响; 和（c）在第二次曝光中，使用曝光和显影过程在底部PMMA层中限定0.03-0.05μm的开口。

公开(公告)号：US07943286B2

公开(公告)日：2011-05-17

申请号：US12079529

申请日：2008-03-27

申请人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

发明人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

IPC分类号： G03F7/26

CPC分类号： H01L21/28581 ,  H01L21/0272

摘要： A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylglutarimide (PMGI) in the middle, and PMMA with low molecular weight on the top; (b) in a first exposure, exposing and developing the layers with a dose of a developer that is high enough to allow the developer to break the top PMMA but low to avoid contributing significantly to the overall dose received in the bottom PMMA layer; and (c) in a second exposure, using an exposure and developing process to define 0.03-0.05 um openings in the bottom PMMA layer.

摘要翻译： 一种用于在异质结场效应晶体管（HFET）上制造超短T栅极的方法，包括以下步骤：（a）提供三层抗蚀剂的涂层与底部具有高分子量的聚甲基丙烯酸甲酯（PMMA），聚二甲基戊二酰亚胺（PMGI ），顶部分子量低的PMMA; （b）在第一次曝光中，用一定剂量的显影剂曝光和显影层，以使得显影剂能够破坏顶部PMMA但是低，以避免对底部PMMA层中所接收的总剂量产生显着影响; 和（c）在第二次曝光中，使用曝光和显影过程在底部PMMA层中限定0.03-0.05μm的开口。

公开(公告)号：US20080017844A1

公开(公告)日：2008-01-24

申请号：US11632670

申请日：2005-12-01

申请人： Kirby Nichols ,  Robert Actis ,  Dong Xu ,  Wendell Kong

发明人： Kirby Nichols ,  Robert Actis ,  Dong Xu ,  Wendell Kong

IPC分类号： H01L29/24 ,  H01L21/338 ,  H01L29/739

CPC分类号： H01L29/42376 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/314 ,  H01L29/66462 ,  H01L29/7784

摘要： A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

摘要翻译： 伪高电子迁移率晶体管（PHEMT）包括衬底，设置在衬底上的低温生长（LTG）GaAs栅极 - 绝缘体层以及设置在栅绝缘体层上的栅电极。