公开(公告)号：US20100301395A1

公开(公告)日：2010-12-02

申请号：US12462515

申请日：2009-08-05

申请人： Dong Xu ,  Xiaoping Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

发明人： Dong Xu ,  Xiaoping Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66431 ,  H01L29/7784 ,  H01L29/7785

摘要： A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

摘要翻译： 高功率和高增益超短栅极HEMT器件具有特别的增益和由栅极电极的增加宽度不对称凹槽提供的异常高的击穿电压，通过复合沟道层，其包括嵌入在铟中的薄的砷化铟层 砷化镓沟道层，并通过使用额外的硅掺杂尖峰进行双掺杂。 改进的晶体管在110 GHz时具有超强的14 dB增益，并具有极高的3.5-4 V击穿电压，从而在超短栅极器件中提供高增益，大功率和超高频。

公开(公告)号：US08445941B2

公开(公告)日：2013-05-21

申请号：US12462515

申请日：2009-08-05

申请人： Dong Xu ,  Xiaoping S. Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

发明人： Dong Xu ,  Xiaoping S. Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

IPC分类号： H01L21/335 ,  H01L29/778

CPC分类号： H01L29/66431 ,  H01L29/7784 ,  H01L29/7785

摘要： A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

公开(公告)号：US20080241757A1

公开(公告)日：2008-10-02

申请号：US12079529

申请日：2008-03-27

申请人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

发明人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

IPC分类号： G03F7/20

CPC分类号： H01L21/28581 ,  H01L21/0272

摘要： A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylglutarimide (PMGI) in the middle, and PMMA with low molecular weight on the top; (b) in a first exposure, exposing and developing the layers with a dose of a developer that is high enough to allow the developer to break the top PMMA but low to avoid contributing significantly to the overall dose received in the bottom PMMA layer; and (c) in a second exposure, using an exposure and developing process to define 0.03-0.05 um openings in the bottom PMMA layer.

摘要翻译： 一种用于在异质结场效应晶体管（HFET）上制造超短T栅极的方法，包括以下步骤：（a）提供三层抗蚀剂的涂层与底部具有高分子量的聚甲基丙烯酸甲酯（PMMA），聚二甲基戊二酰亚胺（PMGI ），顶部分子量低的PMMA; （b）在第一次曝光中，用一定剂量的显影剂曝光和显影层，以使得显影剂能够破坏顶部PMMA但是低，以避免对底部PMMA层中所接收的总剂量产生显着影响; 和（c）在第二次曝光中，使用曝光和显影过程在底部PMMA层中限定0.03-0.05μm的开口。

公开(公告)号：US07943286B2

公开(公告)日：2011-05-17

申请号：US12079529

申请日：2008-03-27

申请人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

发明人： Dong Xu ,  Gabriel Cueva ,  Pane-chane Chao ,  Wendell Kong

IPC分类号： G03F7/26

CPC分类号： H01L21/28581 ,  H01L21/0272

摘要： A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylglutarimide (PMGI) in the middle, and PMMA with low molecular weight on the top; (b) in a first exposure, exposing and developing the layers with a dose of a developer that is high enough to allow the developer to break the top PMMA but low to avoid contributing significantly to the overall dose received in the bottom PMMA layer; and (c) in a second exposure, using an exposure and developing process to define 0.03-0.05 um openings in the bottom PMMA layer.

摘要翻译： 一种用于在异质结场效应晶体管（HFET）上制造超短T栅极的方法，包括以下步骤：（a）提供三层抗蚀剂的涂层与底部具有高分子量的聚甲基丙烯酸甲酯（PMMA），聚二甲基戊二酰亚胺（PMGI ），顶部分子量低的PMMA; （b）在第一次曝光中，用一定剂量的显影剂曝光和显影层，以使得显影剂能够破坏顶部PMMA但是低，以避免对底部PMMA层中所接收的总剂量产生显着影响; 和（c）在第二次曝光中，使用曝光和显影过程在底部PMMA层中限定0.03-0.05μm的开口。

公开(公告)号：US20080017844A1

公开(公告)日：2008-01-24

申请号：US11632670

申请日：2005-12-01

申请人： Kirby Nichols ,  Robert Actis ,  Dong Xu ,  Wendell Kong

发明人： Kirby Nichols ,  Robert Actis ,  Dong Xu ,  Wendell Kong

IPC分类号： H01L29/24 ,  H01L21/338 ,  H01L29/739

CPC分类号： H01L29/42376 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/314 ,  H01L29/66462 ,  H01L29/7784

摘要： A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

摘要翻译： 伪高电子迁移率晶体管（PHEMT）包括衬底，设置在衬底上的低温生长（LTG）GaAs栅极 - 绝缘体层以及设置在栅绝缘体层上的栅电极。

公开(公告)号：US20170194183A1

公开(公告)日：2017-07-06

申请号：US15281110

申请日：2016-09-30

申请人： Dong Xu

发明人： Dong Xu

IPC分类号： H01L21/677 ,  H01L21/68 ,  B25J9/16 ,  H01L21/67

CPC分类号： H01L21/67766 ,  B25J9/1692 ,  H01L21/67259 ,  H01L21/67265 ,  H01L21/67778 ,  H01L21/68 ,  H01L21/68707

摘要： A robot fork calibration method and system is provided. At least three non-linear arranged lower sensors are provided on a bottom surface of the fork to detect distances to a fixed detection point. The fixed detection point and a horizontal plane of the detection point define a reference coordinate system. Spatial coordinates of the lower sensors in the reference coordinate system are calculated and a plane equation as well as a tilted angle of the fork are obtained according to the spatial coordinates. Therefore, the height of the fork can be calibrated according to the Z axis coordinates of the lower sensors and the levelness of the fork can be calibrated according to the tilted angle.

公开(公告)号：US20080058278A1

公开(公告)日：2008-03-06

申请号：US11764761

申请日：2007-06-18

申请人： Dong Xu ,  William Truog

发明人： Dong Xu ,  William Truog

IPC分类号： A61K31/70 ,  A61P11/00 ,  C12N15/00 ,  C12N15/87 ,  C12N5/06

CPC分类号： C12N9/0008 ,  A61K48/00 ,  C12N2510/00

摘要： Oxygen toxicity is one of the major risk factors in the development of the chronic lung disease or bronchopulmonary dysplasia in premature infants. Using proteomic analysis, we discovered mitochondrial aldehyde dehydrogenase (mtALDH or ALDH2) was down-regulated in neonatal rat lung after hyperoxic exposure. To study the role of mtALDH in hyperoxic lung injury, we overexpressed mtALDH in human lung epithelial cells (A549) and found that mtALDH significantly reduced hyperoxia-induced cell death. Compared to control cells (Neo-A549), the necrotic cell death in mtALDH overexpressing cells (mtALDH-A549) decreased from 25.3% to 6.5%, 50.5% to 9.1% and 52.4% to 15.06% after 24-, 48- and 72-hour hyperoxic exposure, respectively. The levels of intracellular and mitochondria-derived reactive oxygen species (ROS) in mtALDH-A549 cells after hyperoxic exposure were significantly lowered compared to Neo-A549 cells. mtALDH overexpression significantly stimulated extracellular signal regulated kinase (ERK) phosphorylation under normoxic and hyperoxic conditions. Inhibition of ERK phosphorylation partially eliminated the protective effect of mtALDH in hyperoxia-induced cell death, suggesting ERK activation by mtALDH conferred cellular resistance to hyperoxia. mtALDH overexpression augmented Akt phosphorylation and maintained the total Akt level in mtALDH-A549 cells under normoxic and hyperoxic conditions. Inhibition of PI3K activation by LY294002 in mtALDH-A549 cells significantly increased necrotic cell death after hyperoxic exposure, indicating that PI3K/Akt activation by mtALDH played an important role in cell survival after hyperoxia. Taken together, these data demonstrate that mtALDH overexpression attenuates hyperoxia-induced cell death in lung epithelial cells through reduction of ROS, activation of ERK/MAPK and PI3K/Akt cell survival signaling pathways.

摘要翻译： 氧气毒性是早产儿慢性肺部疾病或支气管肺发育不良发展的主要危险因素之一。 使用蛋白质组学分析，我们发现线粒体醛脱氢酶（mtALDH或ALDH2）在高氧暴露后新生大鼠肺中下调。 为了研究mtALDH在高氧性肺损伤中的作用，我们在人肺上皮细胞（A549）中过表达mtALDH，发现mtALDH显着降低高氧诱导的细胞死亡。 与对照细胞（Neo-A549）相比，mtALDH过表达细胞（mtALDH-A549）的坏死细胞死亡率分别为24.3％，48％和72％，从25.3％降至6.5％，50.5％降至9.1％，52.4％降至15.06％ - 低氧暴露。 与新生A549细胞相比，高氧暴露后mtALDH-A549细胞中细胞内和线粒体衍生的活性氧（ROS）水平显着降低。 在常氧和高氧条件下，mtALDH过表达显着刺激细胞外信号调节激酶（ERK）磷酸化。 抑制ERK磷酸化部分消除了mtALDH在高氧诱导的细胞死亡中的保护作用，表明通过mtALDH的ERK活化赋予细胞对高氧的抗性。 mtALDH过表达增强Akt磷酸化，并维持在常氧和高氧条件下mtALDH-A549细胞中的总Akt水平。 在mtALDH-A549细胞中LY294002对PI3K活化的抑制作用在高氧暴露后显着增加坏死细胞死亡，说明mtALDH的PI3K / Akt活化在高氧后细胞存活中起重要作用。 总之，这些数据表明，mtALDH过表达通过减少ROS，激活ERK / MAPK和PI3K / Akt细胞存活信号通路来减轻肺上皮细胞中的高氧诱导的细胞死亡。

公开(公告)号：US20070102852A1

公开(公告)日：2007-05-10

申请号：US10579858

申请日：2004-11-17

申请人： Johan Richaud ,  Lawrence Heaslip ,  James Dorricott ,  Dong Xu

发明人： Johan Richaud ,  Lawrence Heaslip ,  James Dorricott ,  Dong Xu

IPC分类号： C21C5/42

CPC分类号： B22D41/50 ,  C21C5/4613

摘要： The present invention concerns a submerged entry nozzle for use in the continuous casting of liquid metal. The nozzle comprises a central bore and a plurality of pairs of discharge outlets. The cross-sectional area of the central bore decreases between pairs of discharge outlets, such that ratio of height to width of any outlet is one or less.

摘要翻译： 本发明涉及一种用于连续铸造液态金属的浸入式喷嘴。 喷嘴包括中心孔和多对排出口。 中心孔的横截面积在成对的排出口之间减小，使得任何出口的高度与宽度之比为一个或更小。

公开(公告)号：US06909820B2

公开(公告)日：2005-06-21

申请号：US10290061

申请日：2002-11-06

申请人： Wei Qiu ,  Zhanxiang Zhang ,  Jianmin Gao ,  Dong Xu

发明人： Wei Qiu ,  Zhanxiang Zhang ,  Jianmin Gao ,  Dong Xu

IPC分类号： G02B6/35 ,  G02B6/26

CPC分类号： G02B6/3514 ,  G02B6/3546

摘要： A planar 2×2 switch is provided for controllably coupling first and second input channels to first and second output channels. The switch includes a first reflector that is movable between a first position and a second position. When the first reflector is in its second position, it reflects light from the first input channel to the second output channel and reflects light from the second input channel to the first output channel. When the first reflection is in its first position, it does not affect the optical beams in the switch. Instead, these beams are reflected by a second reflector which has two reflective surfaces. The second reflector reflects light from the first input channel to the first output channel and reflects light from the second input channel to the second output channel. Switches having a larger number of input and output channels are also provided.

摘要翻译： 提供了一个平面的2x2开关，用于将第一和第二输入通道可控地耦合到第一和第二输出通道。 开关包括可在第一位置和第二位置之间移动的第一反射器。 当第一反射器处于其第二位置时，它将来自第一输入通道的光反射到第二输出通道，并将来自第二输入通道的光反射到第一输出通道。 当第一反射处于其第一位置时，它不影响开关中的光束。 相反，这些光束被具有两个反射表面的第二反射器反射。 第二反射器将来自第一输入通道的光反射到第一输出通道，并将来自第二输入通道的光反射到第二输出通道。 还提供了具有更大数量的输入和输出通道的开关。

公开(公告)号：US5871660A

公开(公告)日：1999-02-16

申请号：US824402

申请日：1997-03-26

申请人： Dong Xu ,  James W. Evans

发明人： Dong Xu ,  James W. Evans

IPC分类号： B22D41/50 ,  B22D41/00

CPC分类号： B22D41/50

摘要： Molten metal is fed to a caster in a continuous casting operation through a distributor that divides the molten metal into four streams flowing in circulating patterns from the central axis of the caster. Each stream sweeps first along the longer side wall of the caster toward the corner, then back along the shorter side wall toward the center line. The result is a higher degree of fragmentation of metal crystals as they form, and a better distribution of the fragments across the caster cross section, as well as a more even temperature distribution.

摘要翻译： 熔融金属以连续铸造操作通过分配器进料到施法者，该分配器将熔融金属从循环模式中分离成从流道的中心轴线流动的四个流。 每条流首先沿着脚轮的较长侧壁朝向拐角扫掠，然后沿着较短的侧壁朝向中心线。 结果是形成金属晶体的较高程度的碎片，并且碎片跨越脚轮横截面的更好的分布以及更均匀的温度分布。