公开(公告)号：US08890165B2

公开(公告)日：2014-11-18

申请号：US12714154

申请日：2010-02-26

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。 形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层， 在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

公开(公告)号：US20100163855A1

公开(公告)日：2010-07-01

申请号：US12649980

申请日：2009-12-30

申请人： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L51/50 ,  H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L29/66765 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L29/66757 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及配备有薄膜晶体管的有机发光二极管（OLED）显示装置，其中薄膜晶体管包括基板，设置在基板上的缓冲层， 第一半导体层和设置在缓冲层上的第二半导体层，与第一半导体层和第二半导体层绝缘的栅电极，将栅电极与第一半导体层和第二半导体层绝缘的栅极绝缘层，以及源极 以及与栅电极绝缘并部分地连接到第二半导体层的漏电极，其中第二半导体层设置在第一半导体层上。

公开(公告)号：US08507914B2

公开(公告)日：2013-08-13

申请号：US12649980

申请日：2009-12-30

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L29/10 ,  H01L31/036

CPC分类号： H01L29/66765 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L29/66757 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及配备有薄膜晶体管的有机发光二极管（OLED）显示装置，其中薄膜晶体管包括基板，设置在基板上的缓冲层， 第一半导体层和设置在缓冲层上的第二半导体层，与第一半导体层和第二半导体层绝缘的栅电极，将栅电极与第一半导体层和第二半导体层绝缘的栅极绝缘层，以及源极 以及与栅电极绝缘并部分地连接到第二半导体层的漏电极，其中第二半导体层设置在第一半导体层上。

公开(公告)号：US20110114961A1

公开(公告)日：2011-05-19

申请号：US12714154

申请日：2010-02-26

申请人： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。 形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层， 在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

公开(公告)号：US20100224882A1

公开(公告)日：2010-09-09

申请号：US12712591

申请日：2010-02-25

申请人： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Kil-Won Lee ,  Maxim Lisachenko ,  Jae-Wan Jung

发明人： Dong-Hyun LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Kil-Won Lee ,  Maxim Lisachenko ,  Jae-Wan Jung

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device having the same, the thin film transistor including: a substrate; a silicon layer formed on the substrate; a diffusion layer formed on the silicon layer; a semiconductor layer that is crystallized using a metal catalyst, formed on the diffusion layer; a gate electrode disposed on the diffusion layer, facing a channel region of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and source and drain electrodes electrically connected to source and drain regions of the semiconductor layer.

摘要翻译： 薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置，所述薄膜晶体管包括：基板; 形成在所述基板上的硅层; 形成在硅层上的扩散层; 形成在扩散层上的使用金属催化剂结晶化的半导体层; 设置在所述扩散层上的面对所述半导体层的沟道区的栅电极; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及电连接到半导体层的源极和漏极区域的源极和漏极。

公开(公告)号：US20100224883A1

公开(公告)日：2010-09-09

申请号：US12714201

申请日：2010-02-26

申请人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

发明人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

摘要翻译： 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US20100224881A1

公开(公告)日：2010-09-09

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L33/16 ,  H01L21/336 ,  H01L21/02

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

摘要翻译： 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US20100163856A1

公开(公告)日：2010-07-01

申请号：US12650078

申请日：2009-12-30

申请人： Byoung-Keon PARK ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Ji-Su Ahn ,  Maxim Lisachenko

发明人： Byoung-Keon PARK ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Ji-Su Ahn ,  Maxim Lisachenko

IPC分类号： H01L51/50 ,  H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.

摘要翻译： 一种薄膜晶体管，一种制造该薄膜晶体管的方法和一种包括该薄膜晶体管的有机发光二极管（OLED）显示装置，该薄膜晶体管包括：一基板; 形成在所述基板上的缓冲层; 设置在缓冲层上的第一半导体层; 设置在所述第一半导体层上的比所述第一半导体层大的第二半导体层; 与第一半导体层和第二半导体层绝缘的栅电极; 栅极绝缘层，用于使栅电极与第一半导体层和第二半导体层绝缘; 源极和漏极与栅电极绝缘并连接到第二半导体层; 设置在源极和漏极上的绝缘层和连接到源极和漏极之一的有机发光二极管。

公开(公告)号：US08294158B2

公开(公告)日：2012-10-23

申请号：US12649718

申请日：2009-12-30

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Maxim Lisachenko ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Maxim Lisachenko ,  Ki-Yong Lee

IPC分类号： H01L27/14 ,  H01L27/12 ,  H01L27/20 ,  H01L27/36

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78606

摘要： A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.

摘要翻译： 薄膜晶体管（TFT）包括衬底，设置在衬底上并包括源区和漏区的半导体层，每个具有第一金属催化剂结晶区和第二金属催化剂结晶区，以及具有第二金属催化剂的沟道区 结晶区域，设置在与半导体层的沟道区域对应的位置的栅极电极，插入在半导体层和栅电极之间以将半导体层与栅电极电绝缘的栅极绝缘层，以及电极和漏极电极 与栅电极绝缘并分别电连接到源极和漏极区。 OLED显示装置包括薄膜晶体管和电连接到源极和漏极的第一电极，有机层和第二电极。