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8 条记录 (耗时 0.022 秒)

    METHOD OF MANUFACTURING SOLAR CELL
    1.
    发明申请
    METHOD OF MANUFACTURING SOLAR CELL 失效
    制造太阳能电池的方法

    公开(公告)号：US20110183459A1

    公开(公告)日：2011-07-28

    申请号：US12828701

    申请日：2010-07-01

    申请人： Dong-Kyun KIM ,  Yun-Gi KIM ,  Jin-Wook LEE ,  Hwa-Young KO

    发明人： Dong-Kyun KIM ,  Yun-Gi KIM ,  Jin-Wook LEE ,  Hwa-Young KO

    IPC分类号： H01L31/18 ,  H01L31/04

    CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of manufacturing a solar cell includes providing a semiconductor substrate; disposing a reflection layer on one side of the semiconductor substrate, wherein the disposing the reflection layer comprises implanting gas into a surface of the one side of the semiconductor substrate and heating the gas; disposing an n+ region and a p+ region separated from each other on the other opposite facing side of the semiconductor substrate; disposing a first electrode connected to the n+ region; and disposing a second electrode connected to the p+ region.

    摘要翻译： 一种制造太阳能电池的方法包括提供半导体衬底; 在半导体衬底的一侧上设置反射层，其中设置反射层包括将气体注入到半导体衬底的一侧的表面中并加热气体; 在所述半导体衬底的另一个相对的面上设置彼此分离的n +区域和p +区域; 设置连接到n +区的第一电极; 以及设置连接到p +区域的第二电极。

    PIEZOELECTRIC MICRO-ACOUSTIC TRANSDUCER AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    PIEZOELECTRIC MICRO-ACOUSTIC TRANSDUCER AND METHOD OF FABRICATING THE SAME 有权
    压电微波传感器及其制造方法

    公开(公告)号：US20110182450A1

    公开(公告)日：2011-07-28

    申请号：US13080927

    申请日：2011-04-06

    申请人： Seok-Whan CHUNG ,  Dong-Kyun KIM ,  Byung-Gil JEONG

    发明人： Seok-Whan CHUNG ,  Dong-Kyun KIM ,  Byung-Gil JEONG

    IPC分类号： H04R25/00 ,  G10K9/122 ,  H01L41/22

    CPC分类号： H04R17/005 ,  H04R2201/003 ,  Y10T29/42

    摘要： Provided are a piezoelectric micro-acoustic transducer and a method of fabricating the same. In the piezoelectric micro-acoustic transducer, a diaphragm is divided into a first region and a second region. The first region may be formed of a material capable of maximizing the exciting force, and the second region may be formed of a material having less initial stress and a lower Young's modulus than the first region. Also, the second region has a corrugated shape.

    摘要翻译： 提供一种压电微声换能器及其制造方法。 在压电微声换能器中，隔膜被分成第一区域和第二区域。 第一区域可以由能够使激励力最大化的材料形成，并且第二区域可以由初始应力较小的材料和比第一区域更低的杨氏模量形成。 此外，第二区域具有波纹形状。

    SEMICONDUCTOR INTEGRATED CIRCUIT
    4.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
    半导体集成电路

    公开(公告)号：US20130328621A1

    公开(公告)日：2013-12-12

    申请号：US13492127

    申请日：2012-06-08

    申请人： Dong-Kyun KIM

    发明人： Dong-Kyun KIM

    IPC分类号： G05F3/02

    CPC分类号： G05F3/245

    摘要： A semiconductor integrated circuit is provided. First and second voltage generation units generate a first voltage and a second voltage with respect to a temperature rise, respectively. First and second current generation units generate a first current and a second current having a negative characteristic with respect to a temperature rise in response to a voltage comparison signal, respectively. A voltage comparison unit compares a voltage level of a first current transfer node with a voltage level of a second current transfer node and generates the voltage comparison signal according to the comparison result. A reference voltage output unit is connected in series to the second voltage generation unit and outputs a reference voltage maintaining a set level, without regard to a temperature variation, in proportion to a third current generated in response to the voltage comparison signal.

    摘要翻译： 提供半导体集成电路。 第一和第二电压产生单元分别产生相对于升温的第一电压和第二电压。 第一和第二电流产生单元分别响应于电压比较信号产生相对于温升的负特性的第一电流和第二电流。 电压比较单元将第一电流传输节点的电压电平与第二电流传输节点的电压电平进行比较，并根据比较结果产生电压比较信号。 参考电压输出单元与第二电压产生单元串联连接，并且与根据电压比较信号产生的第三电流成比例地输出维持设定电平的参考电压，而不考虑温度变化。

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 有权
    半导体器件和半导体存储器件

    公开(公告)号：US20130322195A1

    公开(公告)日：2013-12-05

    申请号：US13486773

    申请日：2012-06-01

    申请人： Dong-Kyun KIM

    发明人： Dong-Kyun KIM

    IPC分类号： G11C7/12 ,  G11C7/06

    CPC分类号： G11C11/4096 ,  G11C11/4094 ,  G11C2207/005

    摘要： A semiconductor device includes: a data transmission unit configured to transmit differential data between a first data line pair and a second data line pair; and first and second power supply voltage generation units configured to generate precharging voltages to be applied to the first and second data line pairs, respectively.

    摘要翻译： 半导体器件包括：数据传输单元，被配置为在第一数据线对和第二数据线对之间传输差分数据; 以及第一和第二电源电压产生单元，被配置为分别产生要施加到第一和第二数据线对的预充电电压。

    PIEZOELECTRIC MICROSPEAKER AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    PIEZOELECTRIC MICROSPEAKER AND METHOD OF FABRICATING THE SAME 有权
    压电微型振荡器及其制造方法

    公开(公告)号：US20120087522A1

    公开(公告)日：2012-04-12

    申请号：US13169408

    申请日：2011-06-27

    申请人： Joo-Ho LEE ,  Dong-Kyun KIM ,  Sang-Hun LEE ,  Seok-Whan CHUNG

    发明人： Joo-Ho LEE ,  Dong-Kyun KIM ,  Sang-Hun LEE ,  Seok-Whan CHUNG

    IPC分类号： H04R17/00 ,  H04R31/00

    CPC分类号： H04R17/005 ,  H04R2201/003

    摘要： A piezoelectric microspeaker and a method of fabricating the same are provided. The piezoelectric microspeaker includes a substrate having a through hole therein; a diaphragm disposed on the substrate and covering the through hole; and a plurality of piezoelectric actuators including a piezoelectric member, a first electrode, and a second electrode, wherein the first and second electrodes are configured to induce an electric field in the piezoelectric member. The piezoelectric actuators include a central actuator, which is disposed on a central portion of the diaphragm and a plurality of edge actuators, which are disposed a predetermined distance apart from the central actuator and are formed on a plurality of edge portions of the diaphragm.

    摘要翻译： 提供一种压电微型扬声器及其制造方法。 压电式微型扬声器包括其中具有通孔的基板; 设置在所述基板上并覆盖所述通孔的隔膜; 以及包括压电元件，第一电极和第二电极的多个压电致动器，其中第一和第二电极构造成在压电元件中感应电场。 压电致动器包括设置在隔膜的中心部分上的中央致动器和多个边缘致动器，它们与中心致动器隔开预定距离设置并形成在隔膜的多个边缘部分上。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20130321067A1

    公开(公告)日：2013-12-05

    申请号：US13486770

    申请日：2012-06-01

    申请人： Dong-Kyun KIM

    发明人： Dong-Kyun KIM

    IPC分类号： G05F1/10

    CPC分类号： G11C5/143 ,  G11C11/4074

    摘要： A semiconductor device includes: a first reference voltage generation unit configured to generate a first reference voltage having a negative property in correspondence to an increase of the temperature; a second reference voltage generation unit configured to generate a second reference voltage having a positive property in correspondence to an increase of the temperature; a voltage level detection unit configured to select any one of the first and second reference voltages according to a voltage selection signal, and detect a level of an internal voltage based on a level of the selected voltage; and an internal voltage generation unit configured to generate the internal voltage in response to an output signal of the voltage level detection unit.

    摘要翻译： 半导体器件包括：第一参考电压产生单元，被配置为产生对应于温度升高具有负性质的第一参考电压; 第二参考电压产生单元，被配置为产生对应于温度升高具有正性质的第二参考电压; 电压电平检测单元，被配置为根据电压选择信号选择第一和第二参考电压中的任何一个，并且基于所选择的电压的电平来检测内部电压的电平; 以及内部电压产生单元，被配置为响应于电压电平检测单元的输出信号而产生内部电压。