POLYMER CONTAINING THIOPHENE UNIT AND THIENYLENEVINYLENE UNIT, AND ORGANIC FIELD EFFECT TRANSISTOR AND ORGANIC SOLAR CELL CONTAINING THE POLYMER
    1.
    发明申请
    POLYMER CONTAINING THIOPHENE UNIT AND THIENYLENEVINYLENE UNIT, AND ORGANIC FIELD EFFECT TRANSISTOR AND ORGANIC SOLAR CELL CONTAINING THE POLYMER 有权
    含有聚苯乙烯单元和三烯酰基单元的聚合物,有机场效应晶体管和含有聚合物的有机太阳能电池

    公开(公告)号:US20110284082A1

    公开(公告)日:2011-11-24

    申请号:US12965068

    申请日:2010-12-10

    摘要: Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment. In addition, the organic compound according to one embodiment of the present invention containing a thienylenevinylene unit may have high oxidative stability because of its high ionization energy.

    摘要翻译: 提供含有噻吩单元和亚噻吩乙烯单元的聚合物,以及含有聚合物的有机场效应晶体管和有机太阳能电池。 可以通过使用溶液法用含有噻吩单元和噻吩乙炔单元的聚合物涂布基材来形成膜。 因此,由于不需要昂贵的真空系统来形成膜,所以可以降低生产成本并且可以适当地制造大型装置。 此外,根据本发明的一个实施方案,含有噻吩单元和亚噻吩基亚乙烯基单元的聚合物具有非常优异的平坦度,因为噻吩单元与具有优异平坦度的乙烯基连续地连接。 因此,由于分子之间的排序性能的改善,聚合物具有高的结晶度,所以可以进一步提高电荷迁移率。 通过热处理可以进一步提高这种结晶度。 此外,含有亚噻吩基亚乙烯基单元的本发明一个实施方案的有机化合物由于其高电离能而具有高的氧化稳定性。

    Polymer containing thiophene unit and thienylenevinylene unit, and organic field effect transistor and organic solar cell containing the polymer
    2.
    发明授权
    Polymer containing thiophene unit and thienylenevinylene unit, and organic field effect transistor and organic solar cell containing the polymer 有权
    含有噻吩单元和噻吩乙烯单元的聚合物,以及含有聚合物的有机场效应晶体管和有机太阳能电池

    公开(公告)号:US08466239B2

    公开(公告)日:2013-06-18

    申请号:US12965068

    申请日:2010-12-10

    摘要: Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment. In addition, the organic compound according to one embodiment of the present invention containing a thienylenevinylene unit may have high oxidative stability because of its high ionization energy.

    摘要翻译: 提供含有噻吩单元和亚噻吩乙烯单元的聚合物,以及含有聚合物的有机场效应晶体管和有机太阳能电池。 可以通过使用溶液法用含有噻吩单元和噻吩乙炔单元的聚合物涂布基材来形成膜。 因此,由于不需要昂贵的真空系统来形成膜,所以可以降低生产成本并且可以适当地制造大型装置。 此外,根据本发明的一个实施方案,含有噻吩单元和亚噻吩基亚乙烯基单元的聚合物具有非常优异的平坦度,因为噻吩单元与具有优异平坦度的乙烯基连续地连接。 因此,由于分子之间的排序性能的改善,聚合物具有高的结晶度,所以可以进一步提高电荷迁移率。 通过热处理可以进一步提高这种结晶度。 此外,含有亚噻吩基亚乙烯基单元的本发明一个实施方案的有机化合物由于其高电离能而具有高的氧化稳定性。

    THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME
    3.
    发明申请
    THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 有权
    基于噻唑基的半导体化合物和使用其的有机薄膜晶体管

    公开(公告)号:US20090152538A1

    公开(公告)日:2009-06-18

    申请号:US12325553

    申请日:2008-12-01

    IPC分类号: H01L51/30 C07D513/02

    摘要: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

    摘要翻译: 提供了使用噻唑的有机半导体化合物和具有由使用噻唑的有机半导体化合物形成的有机半导体层的有机薄膜晶体管。 包括噻唑的新型有机半导体化合物具有液晶性和优异的热稳定性,因此提供在有机薄膜晶体管中形成有机半导体层。 为此,在硅衬底上形成氧化硅层,在氧化硅层上形成包含噻唑的有机半导体层。 此外,源极和漏极形成在有机半导体层的两个边缘部分上。 使用有机半导体层的有机薄膜晶体管具有改善的开/关比和优异的热稳定性。 此外,解决方法可以在其制造中应用。

    Thiazole-based semiconductor compound and organic thin film transistor using the same
    4.
    发明授权
    Thiazole-based semiconductor compound and organic thin film transistor using the same 失效
    噻唑类半导体化合物和使用其的有机薄膜晶体管

    公开(公告)号:US08263431B2

    公开(公告)日:2012-09-11

    申请号:US13012388

    申请日:2011-01-24

    IPC分类号: H01L51/40

    摘要: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

    摘要翻译: 提供了使用噻唑的有机半导体化合物和具有由使用噻唑的有机半导体化合物形成的有机半导体层的有机薄膜晶体管。 包括噻唑的新型有机半导体化合物具有液晶性和优异的热稳定性,因此提供在有机薄膜晶体管中形成有机半导体层。 为此,在硅衬底上形成氧化硅层,在氧化硅层上形成包含噻唑的有机半导体层。 此外,源极和漏极形成在有机半导体层的两个边缘部分上。 使用有机半导体层的有机薄膜晶体管具有改善的开/关比和优异的热稳定性。 此外,解决方法可以在其制造中应用。

    THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME
    5.
    发明申请
    THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 失效
    基于噻唑基的半导体化合物和使用其的有机薄膜晶体管

    公开(公告)号:US20110177653A1

    公开(公告)日:2011-07-21

    申请号:US13012388

    申请日:2011-01-24

    IPC分类号: H01L51/30 C07D513/04

    摘要: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

    摘要翻译: 提供了使用噻唑的有机半导体化合物和具有由使用噻唑的有机半导体化合物形成的有机半导体层的有机薄膜晶体管。 包括噻唑的新型有机半导体化合物具有液晶性和优异的热稳定性,因此提供在有机薄膜晶体管中形成有机半导体层。 为此,在硅衬底上形成氧化硅层,在氧化硅层上形成包含噻唑的有机半导体层。 此外,源极和漏极形成在有机半导体层的两个边缘部分上。 使用有机半导体层的有机薄膜晶体管具有改善的开/关比和优异的热稳定性。 此外,解决方法可以在其制造中应用。

    Thiazole-based semiconductor compound and organic thin film transistor using the same
    6.
    发明授权
    Thiazole-based semiconductor compound and organic thin film transistor using the same 有权
    噻唑类半导体化合物和使用其的有机薄膜晶体管

    公开(公告)号:US07897963B2

    公开(公告)日:2011-03-01

    申请号:US12325553

    申请日:2008-12-01

    IPC分类号: H01L29/08 H01L35/24 H01L51/00

    摘要: Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.

    摘要翻译: 提供了使用噻唑的有机半导体化合物和具有由使用噻唑的有机半导体化合物形成的有机半导体层的有机薄膜晶体管。 包括噻唑的新型有机半导体化合物具有液晶性和优异的热稳定性,因此提供在有机薄膜晶体管中形成有机半导体层。 为此,在硅衬底上形成氧化硅层,在氧化硅层上形成包含噻唑的有机半导体层。 此外,源极和漏极形成在有机半导体层的两个边缘部分上。 使用有机半导体层的有机薄膜晶体管具有改善的开/关比和优异的热稳定性。 此外,解决方法可以在其制造中应用。

    Perfluoroalkyleneoxy group-substituted phenylethylsilane compound and polymer thereof
    7.
    发明授权
    Perfluoroalkyleneoxy group-substituted phenylethylsilane compound and polymer thereof 有权
    全氟亚烷基氧基取代的苯基乙基硅烷化合物及其聚合物

    公开(公告)号:US07719002B2

    公开(公告)日:2010-05-18

    申请号:US11896472

    申请日:2007-08-31

    IPC分类号: H01L51/30

    摘要: Disclosed herein are a perfluoroalkyleneoxy group-substituted phenylethylsilane compound and a polymer thereof. The perfluoroalkyleneoxy group-substituted phenylethylsilane compound represented by Formula 1 has excellent thermal and chemical stability to be solution-processed in a monomer state, and the polymer prepared by thermally crosslinking the compound has a high resistance to organic solvents. Moreover, since an insulating layer prepared by applying the same shows improved thermal and physical properties, it is possible to manufacture organic thin-film transistors having a high on/off ratio in a simple process such as a photolithography for a large-size substrate: wherein R1, R2, R3, Z1, Z2, Z3, and n are the same as defined in the detailed description of the invention.

    摘要翻译: 本文公开了全氟亚烷基氧基取代的苯基乙基硅烷化合物及其聚合物。 由式1表示的全氟亚烷基氧基取代的苯乙基硅烷化合物具有优异的在单体状态下进行溶液处理的热和化学稳定性,通过热交联化合物制备的聚合物对有机溶剂具有高的耐性。 此外,由于通过应用其制备的绝缘层显示出改善的热和物理性质,可以在诸如用于大尺寸基板的光刻的简单工艺中制造具有高开/关比的有机薄膜晶体管: 其中R1,R2,R3,Z1,Z2,Z3和n与本发明的详细描述中定义相同。

    Perfluoroalkyleneoxy group-substituted phenylethylsilane compound and polymer thereof
    9.
    发明申请
    Perfluoroalkyleneoxy group-substituted phenylethylsilane compound and polymer thereof 有权
    全氟亚烷基氧基取代的苯基乙基硅烷化合物及其聚合物

    公开(公告)号:US20080139766A1

    公开(公告)日:2008-06-12

    申请号:US11896472

    申请日:2007-08-31

    IPC分类号: C08F14/18 C07F7/12 H01L29/00

    摘要: Disclosed herein are a perfluoroalkyleneoxy group-substituted phenylethylsilane compound and a polymer thereof. The perfluoroalkyleneoxy group-substituted phenylethylsilane compound represented by Formula 1 has excellent thermal and chemical stability to be solution-processed in a monomer state, and the polymer prepared by thermally crosslinking the compound has a high resistance to organic solvents. Moreover, since an insulating layer prepared by applying the same shows improved thermal and physical properties, it is possible to manufacture organic thin-film transistors having a high on/off ratio in a simple process such as a photolithography for a large-size substrate: wherein R1, R2, R3, Z1, Z2, Z3, and n are the same as defined in the detailed description of the invention.

    摘要翻译: 本文公开了全氟亚烷基氧基取代的苯基乙基硅烷化合物及其聚合物。 由式1表示的全氟亚烷基氧基取代的苯基乙基硅烷化合物具有优异的在单体状态下进行溶液处理的热和化学稳定性,通过热交联化合物制备的聚合物对有机溶剂具有高的耐性。 此外,由于通过涂覆其制备的绝缘层显示出改善的热和物理性质,可以在诸如用于大尺寸基板的光刻的简单工艺中制造具有高开/关比的有机薄膜晶体管: 其中R 1,R 2,R 3,Z 1,Z 2, Z 3,N与本发明的详细说明中所定义的相同。

    Method of forming active layer of organic solar cell using spray coating method
    10.
    发明申请
    Method of forming active layer of organic solar cell using spray coating method 审中-公开
    使用喷涂法形成有机太阳能电池有源层的方法

    公开(公告)号:US20090155459A1

    公开(公告)日:2009-06-18

    申请号:US12222926

    申请日:2008-08-20

    IPC分类号: B05D5/12

    摘要: A method of forming an active layer of an organic solar cell using spray coating is provided. The method includes dissolving at least one material in a solvent to form a solution, preparing a coating material by diluting the solution, and spraying the coating material on a subject for spray coating. The spray coating does not need a vacuum chuck, and thus can be applied to a large-sized substrate, and a roll-to-roll method.

    摘要翻译: 提供了使用喷涂形成有机太阳能电池的有源层的方法。 该方法包括将至少一种材料溶解在溶剂中以形成溶液,通过稀释溶液来制备涂料,并将涂料喷涂在受试者上用于喷涂。 喷涂不需要真空吸盘,因此可以应用于大尺寸基板,以及卷对卷方法。