摘要:
Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.
摘要:
Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.
摘要:
Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating.
摘要:
A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film.
摘要:
Provided are methods of and apparatuses for forming a metal pattern. In the method, an initiator and a metal pattern are sequentially combined on a previously-formed bonding agent pattern improving adhesion and/or junction properties between the substrate and the metal. The bonding agent pattern may be formed using a reverse offset printing method. The metal pattern may be formed using an electroless electrochemical plating method. The metal pattern can be formed with improved uniformity in thickness and planar area.
摘要:
A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.
摘要:
A composition for an organic dielectric, includes a compound represented by Formula 1 below; and a cross-linking agent, wherein, in Formula 1, R1 is any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, R2 is selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99,
摘要:
Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
摘要:
Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.
摘要:
Provided is an organic thin film transistor, method of forming the same, and a memory device employing the same. The organic thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the substrate between the source electrode and the drain electrode, a gate electrode controlling the active layer, and an organic dielectric layer between the active layer and the gate electrode. The organic dielectric layer includes nanoparticles, a hydrophilic polymer surrounding the nanoparticles, and a hydrophobic polymer.