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    BROADBAND MICROSTRIP BALUN AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    BROADBAND MICROSTRIP BALUN AND METHOD OF MANUFACTURING THE SAME 审中-公开
    宽带微波巴伦及其制造方法

    公开(公告)号：US20090140823A1

    公开(公告)日：2009-06-04

    申请号：US12058781

    申请日：2008-03-31

    申请人： Dong-hyun Lee ,  Jung-han Choi ,  Young-hwan Kim ,  Chul-soo Kim ,  Sung-tae Choi ,  Cheol-gyu Hwang

    发明人： Dong-hyun Lee ,  Jung-han Choi ,  Young-hwan Kim ,  Chul-soo Kim ,  Sung-tae Choi ,  Cheol-gyu Hwang

    IPC分类号： H01P5/10 ,  H03H3/00

    CPC分类号： H01P5/10 ,  H01P11/00 ,  Y10T29/49117

    摘要： A broadband microstrip balun and a method of manufacturing the same are provided. In the balun, transmission lines formed at different layers partially overlap in parallel with each other, and a common ground having a predetermined opening is inserted between the transmission lines. Thus, an unbalanced signal may be converted into a balanced signal in a broad frequency band using resonance of a common ground plate with the opening and a Bethe hall effect. Also, impedance matching is readily enabled, thereby reducing a parasitic element.

    摘要翻译： 提供了一种宽带微带平衡 - 不平衡转换器及其制造方法。 在平衡 - 不平衡转换器中，形成在不同层的传输线部分地彼此平行地重叠，并且在传输线之间插入具有预定开口的公共地面。 因此，使用公共接地板与开口和Bethe霍尔效应的共振，不平衡信号可以被转换成宽频带中的平衡信号。 此外，容易实现阻抗匹配，从而减少寄生元件。

    High-temperature interband cascade lasers
    2.
    发明授权
    High-temperature interband cascade lasers 有权
    高温带间级联激光器

    公开(公告)号：US08125706B2

    公开(公告)日：2012-02-28

    申请号：US12402627

    申请日：2009-03-12

    申请人： Igor Vurgaftman ,  Jerry R Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    发明人： Igor Vurgaftman ,  Jerry R Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    IPC分类号： H01S3/00

    CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

    摘要： A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well; (2) the hole injector includes two or more GaSb hole wells having thicknesses in a specified range; (3) the electron and hole injectors are separated by a thick AlSb barrier to suppress interband absorption; (4) a first electron barrier of the hole injector region separating the hole injector region from an adjacent active quantum well region has a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states to not more than 5%; (5) the thickness of the first InAs electron well in the electron injector, as well as the total thickness of the electron injector, is reduced; (6) the number of cascaded stages is reduced; (7) transition regions are inserted at the interfaces between the various regions of the gain medium so as to smooth out abrupt shifts of the conduction-band minimum; (8) thick separate confinement layers comprising Ga(InAlAs)Sb are disposed between the active gain region and the cladding to confine the optical mode and increase its overlap with the active stages; and (9) the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AlSb SL cladding layers. An interband cascade laser, an interband cascade amplifier, or an external cavity laser employing a gain medium having these features can emit at a wavelength of about 2.5 μm to about 8 μm at high temperatures.

    摘要翻译： 提出了增益介质和带间级联激光器，带间级联放大器和具有增益介质的外腔激光器。 增益介质可以包括以下特征中的一个或多个：（1）有源量子阱区域包括厚和富InGaInSb孔; （2）孔喷射器包括厚度在规定范围内的两个以上的GaSb孔穴; （3）电子和空穴注入器被厚的AlSb屏障隔开，以抑制带间吸收; （4）将空穴注入器区域与相邻的有源量子阱区域分离的空穴注入器区域的第一电子势垒具有足以降低区中心活性电子量子阱和喷射器孔状态之间的波函数重叠的平方的厚度， 不超过5％; （5）电子注入器中的第一InAs电子阱的厚度以及电子注入器的总厚度减小; （6）级联级数减少; （7）过渡区域插入在增益介质的各个区域之间的界面处，以平滑导带最小值的突变; （8）包含Ga（InAlAs）Sb的厚的分离的约束层设置在有源增益区和包层之间以限制光学模式并增加其与有源级的重叠; 并且（9）优化包层的掺杂分布，以最小化光学模式与InAs / AlSb SL包覆层的最重掺杂部分的重叠。 带间级联激光器，带间级联放大器或采用具有这些特征的增益介质的外腔激光器可以在高温下以约2.5μm至约8μm的波长发射。

    TUNABLE RESONATOR AND TUNABLE FILTER
    3.
    发明申请
    TUNABLE RESONATOR AND TUNABLE FILTER 有权
    TUNABLE谐振器和TUNABLE滤波器

    公开(公告)号：US20090115555A1

    公开(公告)日：2009-05-07

    申请号：US12045850

    申请日：2008-03-11

    申请人： Chul-soo Kim ,  Sang-won Yun ,  Young-ho Cho ,  In-sang Song ,  Byeong-ju Ha ,  Duck-hwan Kim

    发明人： Chul-soo Kim ,  Sang-won Yun ,  Young-ho Cho ,  In-sang Song ,  Byeong-ju Ha ,  Duck-hwan Kim

    IPC分类号： H01P1/203

    CPC分类号： H01P1/20336

    摘要： A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.

    摘要翻译： 提供了一种可调谐滤波器，其包括一个滤波器单元，该滤波器单元包括一对彼此相对设置的微带，连接到滤波单元一侧的电容器单元和用于调节该对微带中的每一个的长度的调节单元 调节过滤器单元的电感，调节单元连接到过滤器单元的相对侧。 因此可以调节微带的长度以改变频带。

    Phase shifter, method of fabricating the same, and duplexer having the same
    6.
    发明授权
    Phase shifter, method of fabricating the same, and duplexer having the same 有权
    移相器及其制造方法，以及具有该移相器的双工器

    公开(公告)号：US07973618B2

    公开(公告)日：2011-07-05

    申请号：US11644910

    申请日：2006-12-26

    申请人： Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-kwon Park

    发明人： Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-kwon Park

    IPC分类号： H03H7/46

    CPC分类号： H03H7/463 ,  H03H7/18

    摘要： A phase shifter fabricated by a simple process and having a simple structure, a method of fabricating the same, and a duplexer having the same are disclosed. The duplexer includes a transmitting-end filter capable of passing only a signal in the range of a transmission frequency, a receiving-end filter capable of passing only a signal in the range of a reception frequency, and a phase shifter interposed between the transmitting-end filter and the receiving-end filter to isolate a transmitted signal of the transmitting-end filter and a received signal of the receiving-end filter from each other. The phase shifter includes a substrate provided with an input port and an output port, an inductor formed on the substrate and connected to the input and output ports, and a capacitor provided on the substrate, wherein the capacitor and inductor share a region of the substrate.

    摘要翻译： 公开了一种通过简单工艺制造并具有简单结构的移相器，其制造方法和具有该相移器的双工器。 双工器包括能够仅通过传输频率范围内的信号的发送端滤波器，仅能够接收接收频率范围内的信号的接收端滤波器和插入在发送频率范围之间的移相器， 端接滤波器和接收端滤波器，以将发送端滤波器的发送信号和接收端滤波器的接收信号彼此隔离。 移相器包括设置有输入端口和输出端口的基板，形成在基板上并连接到输入和输出端口的电感器和设置在基板上的电容器，其中电容器和电感器共享基板的区域 。

    Integrated device and fabricating method thereof
    7.
    发明授权
    Integrated device and fabricating method thereof 有权
    集成器件及其制造方法

    公开(公告)号：US07701312B2

    公开(公告)日：2010-04-20

    申请号：US11812878

    申请日：2007-06-22

    申请人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    发明人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    IPC分类号： H03H9/00

    CPC分类号： H03H3/04 ,  H03H9/0547 ,  H03H9/174 ,  Y10T29/42

    摘要： An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

    摘要翻译： 通过集成FBAR和可调电容器构成集成器件。 集成器件包括衬底; 形成在所述基板上的谐振器; 形成在与所述谐振器分离的所述基板上的驱动电极层; 从衬底向上分离并面向谐振器的第一电极层; 以及第二电极层，该第二电极层从衬底向上形成并面对驱动电极层，第二电极层从第一电极层阶梯形。 因此，集成器件可以增加调谐范围并减小寄生电阻。

    TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR)
    8.
    发明申请
    TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR) 有权
    使用电影大音量谐振器（FBAR）的谐振器

    公开(公告)号：US20090115553A1

    公开(公告)日：2009-05-07

    申请号：US12048481

    申请日：2008-03-14

    申请人： Jea-shik SHIN ,  Yun-kwon Park ,  In-sang Song ,  Duck-hwan Kim ,  Chul-soo Kim

    发明人： Jea-shik SHIN ,  Yun-kwon Park ,  In-sang Song ,  Duck-hwan Kim ,  Chul-soo Kim

    IPC分类号： H03H9/54

    CPC分类号： H03H9/171 ,  H03H2009/02173

    摘要： A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

    摘要翻译： 提供可调谐谐振器。 可调谐谐振器包括用于进行谐振的膜体声波谐振器（FBAR）和至少一个驱动器，该驱动器布置在FBAR的一侧并通过外部信号变形并与FBAR接触，从而改变谐振 FBAR的频率。 因此，可以简单地使用微机电系统（MEMS）技术来实现多频带集成和单芯片制造，并且可以批量生产。

    Balun
    9.
    发明申请
    Balun 有权
    巴伦

    公开(公告)号：US20070194860A1

    公开(公告)日：2007-08-23

    申请号：US11638507

    申请日：2006-12-14

    申请人： Chul-soo Kim ,  Dal Ahn ,  Kwi-soo Kim ,  In-sang Song ,  Yun-kwon Park ,  Seok-chul Yun ,  Kuang-woo Nam

    发明人： Chul-soo Kim ,  Dal Ahn ,  Kwi-soo Kim ,  In-sang Song ,  Yun-kwon Park ,  Seok-chul Yun ,  Kuang-woo Nam

    IPC分类号： H03H5/00

    CPC分类号： H01P5/10

    摘要： A balun capable of a reduced whole size. The balun includes an input line receiving an unbalanced signal, an output line receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground part. The input and output lines are formed on a layer, and the ground part is formed on a different layer from the layer. The ground part includes an opening and is electrically connected to the input line, and a portion of the ground part is removed to form the opening so that a potential difference occurs between first and second output lines. Thus, although a length of the output line is less than ¼ of an input wavelength λ, a difference between phases of first and second output signals can be about 180°. As a result, the whole size of the balun can be reduced.

    摘要翻译： 平衡 - 不平衡转换器能够减小整体尺寸。 平衡 - 不平衡转换器包括接收不平衡信号的输入线，输入线接收来自输入线的不平衡信号并输出​​平衡信号的输出线和接地部分。 输入和输出线形成在层上，并且接地部分形成在与该层不同的层上。 接地部分包括开口并且电连接到输入线，并且去除接地部分的一部分以形成开口，使得在第一和第二输出线之间产生电位差。 因此，尽管输出线的长度小于输入波长λ的1/4，但是第一和第二输出信号的相位差可以是大约180°。 结果，平衡不平衡变换器的整体尺寸可以减小。

    Multi-band filter module and method of fabricating the same
    10.
    发明申请
    Multi-band filter module and method of fabricating the same 有权
    多频带滤波器模块及其制造方法

    公开(公告)号：US20070182510A1

    公开(公告)日：2007-08-09

    申请号：US11633464

    申请日：2006-12-05

    申请人： Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Kuang-woo Nam

    发明人： Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Kuang-woo Nam

    IPC分类号： H03H9/58

    CPC分类号： H03H9/703 ,  H01L2924/0002 ,  H03H3/04 ,  H03H9/105 ,  H03H9/587 ,  H03H2250/00 ,  Y10T29/42 ,  H01L2924/00

    摘要： A multi-band filter module and a method of fabricating the same are disclosed. At least one upper filter is deposited on an upper surface of a first substrate. The first packaging substrate packages the upper filter deposited on the first substrate. At least one lower filter is deposited on an upper surface of the second substrate. The second packaging substrate packages the lower filter deposited on the second substrate. The lower surface of the first substrate is joined to a lower surface of the second substrate to face each other.

    摘要翻译： 公开了一种多带滤波器模块及其制造方法。 至少一个上部过滤器沉积在第一衬底的上表面上。 第一封装衬底封装沉积在第一衬底上的上过滤器。 至少一个下部过滤器沉积在第二衬底的上表面上。 第二封装衬底封装沉积在第二衬底上的下部滤波器。 第一基板的下表面被接合到第二基板的下表面以彼此面对。