利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

170 条记录 (耗时 0.03 秒)

    Film bulk acoustic resonator filter and duplexer
    1.
    发明申请
    Film bulk acoustic resonator filter and duplexer 有权
    薄膜体声波谐振器滤波器和双工器

    公开(公告)号：US20080100397A1

    公开(公告)日：2008-05-01

    申请号：US11808066

    申请日：2007-06-06

    申请人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    发明人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    IPC分类号： H03H9/72 ,  H03H9/60

    CPC分类号： H03H9/706

    摘要： A film bulk acoustic resonator (FBAR) filter and a duplexer are disclosed. At least one series resonator is positioned between an input port for inputting a frequency signal and an output port for outputting a frequency signal, at least two shunt resonators respectively positioned between the input and output ports and a ground, a first trimming inductor connects the at least two shunt resonators and the ground, and a second trimming inductor is positioned between the at least two shunt resonators.

    摘要翻译： 公开了一种薄膜体声共振器（FBAR）滤波器和双工器。 至少一个串联谐振器位于用于输入频率信号的输入端口和用于输出频率信号的输出端口之间，分别位于输入和输出端口之间的至少两个并联谐振器和接地，第一微调电感器将at 至少两个并联谐振器和地，并且第二微调电感器位于所述至少两个并联谐振器之间。

    Film bulk acoustic resonator filter and duplexer
    2.
    发明授权
    Film bulk acoustic resonator filter and duplexer 有权
    薄膜体声波谐振器滤波器和双工器

    公开(公告)号：US07830226B2

    公开(公告)日：2010-11-09

    申请号：US11808066

    申请日：2007-06-06

    申请人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    发明人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    IPC分类号： H03H9/70 ,  H03H9/54

    CPC分类号： H03H9/706

    摘要： A film bulk acoustic resonator (FBAR) filter and a duplexer are disclosed. At least one series resonator is positioned between an input port for inputting a frequency signal and an output port for outputting a frequency signal, at least two shunt resonators respectively positioned between the input and output ports and a ground, a first trimming inductor connects the at least two shunt resonators and the ground, and a second trimming inductor is positioned between the at least two shunt resonators.

    摘要翻译： 公开了一种薄膜体声共振器（FBAR）滤波器和双工器。 至少一个串联谐振器位于用于输入频率信号的输入端口和用于输出频率信号的输出端口之间，分别位于输入和输出端口之间的至少两个并联谐振器和接地，第一微调电感器将at 至少两个并联谐振器和地，并且第二微调电感器位于所述至少两个并联谐振器之间。

    Integrated device and fabricating method thereof
    4.
    发明授权
    Integrated device and fabricating method thereof 有权
    集成器件及其制造方法

    公开(公告)号：US07701312B2

    公开(公告)日：2010-04-20

    申请号：US11812878

    申请日：2007-06-22

    申请人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    发明人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    IPC分类号： H03H9/00

    CPC分类号： H03H3/04 ,  H03H9/0547 ,  H03H9/174 ,  Y10T29/42

    摘要： An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

    摘要翻译： 通过集成FBAR和可调电容器构成集成器件。 集成器件包括衬底; 形成在所述基板上的谐振器; 形成在与所述谐振器分离的所述基板上的驱动电极层; 从衬底向上分离并面向谐振器的第一电极层; 以及第二电极层，该第二电极层从衬底向上形成并面对驱动电极层，第二电极层从第一电极层阶梯形。 因此，集成器件可以增加调谐范围并减小寄生电阻。

    Integrated device and fabricating method thereof
    6.
    发明申请
    Integrated device and fabricating method thereof 有权
    集成器件及其制造方法

    公开(公告)号：US20080116999A1

    公开(公告)日：2008-05-22

    申请号：US11812878

    申请日：2007-06-22

    申请人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    发明人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    IPC分类号： H03H9/54 ,  H01L41/22

    CPC分类号： H03H3/04 ,  H03H9/0547 ,  H03H9/174 ,  Y10T29/42

    摘要： An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

    摘要翻译： 通过集成FBAR和可调电容器构成集成器件。 集成器件包括衬底; 形成在所述基板上的谐振器; 形成在与所述谐振器分离的所述基板上的驱动电极层; 从衬底向上分离并面向谐振器的第一电极层; 以及第二电极层，该第二电极层从衬底向上形成并面对驱动电极层，第二电极层从第一电极层阶梯形。 因此，集成器件可以增加调谐范围并减小寄生电阻。

    Duplexer
    8.
    发明申请
    Duplexer 有权
    双工器

    公开(公告)号：US20070182509A1

    公开(公告)日：2007-08-09

    申请号：US11648664

    申请日：2007-01-03

    申请人： Yun-kwon Park ,  Sang-chul Sul ,  In-sang Song ,  Chul-soo Kim ,  Seok-chul Yun ,  Kuang-woo Nam

    发明人： Yun-kwon Park ,  Sang-chul Sul ,  In-sang Song ,  Chul-soo Kim ,  Seok-chul Yun ,  Kuang-woo Nam

    IPC分类号： H03H9/70

    CPC分类号： H03H9/706

    摘要： A duplexer is provided. The duplexer includes a first band pass filter (BPF) coupled to a first signal port and a second signal port; and a second BPF coupled to the first signal port and a third signal port, each of the first BPF and the second BPF including a first resonance circuit which comprises a plurality of first resonators coupled in series; a second resonance circuit which comprises a plurality of second resonators coupled in series; and a third resonance circuit which comprises a plurality of third resonators coupled in parallel and formed in divided lines coupling the first and second resonance circuits.

    摘要翻译： 提供双工器。 双工器包括耦合到第一信号端口和第二信号端口的第一带通滤波器（BPF）; 以及耦合到所述第一信号端口和第三信号端口的第二BPF，所述第一BPF和所述第二BPF中的每一个包括第一谐振电路，所述第一谐振电路包括串联耦合的多个第一谐振器; 第二谐振电路，包括串联耦合的多个第二谐振器; 以及第三谐振电路，其包括并联耦合的多个第三谐振器，并且以分开的线形成并联第一和第二谐振电路。

    Balun
    10.
    发明授权
    Balun 失效
    巴伦

    公开(公告)号：US07535313B2

    公开(公告)日：2009-05-19

    申请号：US11656981

    申请日：2007-01-24

    申请人： Chul-soo Kim ,  Dal Ahn ,  Kwi-soo Kim ,  In-sang Song ,  Yun-kwon Park ,  Kuang-woo Nam

    发明人： Chul-soo Kim ,  Dal Ahn ,  Kwi-soo Kim ,  In-sang Song ,  Yun-kwon Park ,  Kuang-woo Nam

    IPC分类号： H03H5/00

    CPC分类号： H03H7/422 ,  H01P5/10 ,  H03H2001/0085

    摘要： A balun includes an input line for receiving an unbalanced signal, an output line for receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground. The input line and the output line are formed in the same layer, and the ground is formed in a different layer from the input line and the output line. The ground has an opening so as to generate a potential difference between the first output line and the second output line. The ground is electrically connected to the input line.

    摘要翻译： 平衡 - 不平衡转换器包括用于接收不平衡信号的输入线，用于从输入线接收不平衡信号并输出​​平衡信号的输出线和接地。 输入线和输出线形成在相同的层中，并且地面形成在与输入线和输出线不同的层中。 地面具有开口，以产生第一输出线和第二输出线之间的电位差。 接地电连接到输入线。