公开(公告)号：US20080020296A1

公开(公告)日：2008-01-24

申请号：US11783261

申请日：2007-04-06

申请人： Duan-Fu Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Chen

发明人： Duan-Fu Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Chen

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US20070122719A1

公开(公告)日：2007-05-31

申请号：US11594248

申请日：2006-11-08

申请人： Douglas Van Den Broeke ,  Sangbong Park ,  Chung-Wei Hsu ,  Jang Chen

发明人： Douglas Van Den Broeke ,  Sangbong Park ,  Chung-Wei Hsu ,  Jang Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36

摘要： A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

摘要翻译： 将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。 该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则，其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。

公开(公告)号：US20110236808A1

公开(公告)日：2011-09-29

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

公开(公告)号：US07981576B2

公开(公告)日：2011-07-19

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US08632930B2

公开(公告)日：2014-01-21

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/36

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US20110014552A1

公开(公告)日：2011-01-20

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US07614034B2

公开(公告)日：2009-11-03

申请号：US11594248

申请日：2006-11-08

申请人： Douglas Van Den Broeke ,  Sangbong Park ,  Chung-Wei Hsu ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Sangbong Park ,  Chung-Wei Hsu ,  Jang Fung Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36

摘要： A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

摘要翻译： 将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。 该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则，其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。

公开(公告)号：US07824826B2

公开(公告)日：2010-11-02

申请号：US11783261

申请日：2007-04-06

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/14 ,  G03F7/20 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补暗场掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。 该方法由配置为存储用于由处理器执行的程序指令的非暂时计算机可读介质启用。 互补暗场掩模用于在器件制造方法中图案化一层辐射敏感材料。

公开(公告)号：US20070213967A1

公开(公告)日：2007-09-13

申请号：US11708137

申请日：2007-02-20

申请人： Sangbong Park ,  Duan-Fu Hsu ,  Edita Tejnil

发明人： Sangbong Park ,  Duan-Fu Hsu ,  Edita Tejnil

IPC分类号： G06G7/48

CPC分类号： G03F7/705

摘要： A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.

摘要翻译： 校准光刻工艺的仿真模型的方法。 该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程，其中调整模型参数和对准参数，使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程，其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。

公开(公告)号：US20060208205A1

公开(公告)日：2006-09-21

申请号：US11339827

申请日：2006-01-26

申请人： Jang Chen ,  Gabriel Berger ,  Tamer Coskun ,  Sangbong Park ,  Ting Chen

发明人： Jang Chen ,  Gabriel Berger ,  Tamer Coskun ,  Sangbong Park ,  Ting Chen

IPC分类号： H01J37/08 ,  G21K5/10 ,  G03B27/52 ,  H01L27/00 ,  G01N21/00

CPC分类号： G03F7/70625 ,  G03F1/36 ,  G03F1/68 ,  G03F7/705 ,  G03F7/70516

摘要： Improved calibration of a resist model used in critical dimension (CD) calculation is disclosed. A dose function is obtained based on optical tool to be used form the resist on a wafer. The dose function indicates the amount of energy in a resist. The dose function is convolved with a convolution kernel to obtain a modified dose function. The convolution kernel has variable diffusion lengths in different directions. The convolution kernel may include multiple Gaussian kernels each having variable diffusion lengths in different directions. The modified dose function is converted into a CD value which is compared with a target value. If necessary, the diffusion lengths of the Gaussian kernels are adjusted based on the comparison result.