公开(公告)号：US08644589B2

公开(公告)日：2014-02-04

申请号：US13786249

申请日：2013-03-05

申请人： Duan-Fu Stephen Hsu ,  Jungchul Park ,  Doug Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Jungchul Park ,  Doug Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06K9/00 ,  G06F17/50

CPC分类号： G06T7/0004 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70466 ,  G03F7/70475

摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

摘要翻译： 一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。 该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

公开(公告)号：US07667216B2

公开(公告)日：2010-02-23

申请号：US11708029

申请日：2007-02-20

申请人： Doug Van Den Broeke ,  Chungwei Hsu ,  Jang Fung Chen

发明人： Doug Van Den Broeke ,  Chungwei Hsu ,  Jang Fung Chen

IPC分类号： G01N21/86 ,  G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/34

摘要： A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

摘要翻译： 一种生成用于打印包括具有不同临界尺寸的多个特征的图案的掩模的方法。 该方法包括以下步骤：（1）获取表示图案的数据; （2）基于所述多个特征的临界尺寸定义多个不同区域; （3）将每个特征分类为多个不同区域中的一个; 以及（4）对于分类为所述多个不同区域中的预定义的不同区域的每个特征修改所述掩模图案。

公开(公告)号：US07211815B2

公开(公告)日：2007-05-01

申请号：US10659715

申请日：2003-09-11

申请人： Doug Van Den Broeke ,  Chungwei Hsu ,  Jang Fung Chen

发明人： Doug Van Den Broeke ,  Chungwei Hsu ,  Jang Fung Chen

IPC分类号： G01N21/86 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/34

摘要： A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

摘要翻译： 一种生成用于打印包括具有不同临界尺寸的多个特征的图案的掩模的方法。 该方法包括以下步骤：（1）获取表示图案的数据; （2）基于所述多个特征的临界尺寸来定义多个不同区域; （3）将每个特征分类为多个不同区域中的一个; 以及（4）对于分类为所述多个不同区域中的预定义的不同区域的每个特征修改所述掩模图案。

公开(公告)号：US07549140B2

公开(公告)日：2009-06-16

申请号：US11035737

申请日：2005-01-18

申请人： Doug Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Hsu

发明人： Doug Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Hsu

IPC分类号： G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/34 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

摘要翻译： 一种生成用于在基板上印刷目标图案的掩模的方法。 该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

公开(公告)号：US06851103B2

公开(公告)日：2005-02-01

申请号：US10395903

申请日：2003-03-25

申请人： Doug Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Hsu

发明人： Doug Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Hsu

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G06F17/50 ,  G03F9/00 ,  G06F19/00 ,  G21K5/00

CPC分类号： G03F1/34 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

公开(公告)号：US20130055171A1

公开(公告)日：2013-02-28

申请号：US13401820

申请日：2012-02-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

摘要翻译： 公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。 该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

公开(公告)号：US20110236808A1

公开(公告)日：2011-09-29

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

公开(公告)号：US07981576B2

公开(公告)日：2011-07-19

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US06875545B2

公开(公告)日：2005-04-05

申请号：US10305364

申请日：2002-11-27

申请人： Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Duan-Fu Stephen Hsu

发明人： Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Duan-Fu Stephen Hsu

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G02B31/00

CPC分类号： G03F7/70125 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination.

摘要翻译： 通过使用光刻设备将光刻图案转印到基板上的方法。 该方法包括以下步骤：（1）定义要印刷在基底上的特征; （2）确定哪些特征要求辅助特征与其邻近设置，以使特征被打印在限定的分辨率限度内; （3）产生包含要印刷的特征和辅助特征的掩模; （4）执行第一照明处理以便在所述基板上打印所述特征，所述第一照明处理导致所述辅助特征部分地印刷在所述基板上; 和（5）执行第二照明处理以减少印刷在基板上的辅助特征量; 第二照明处理需要执行四极照明的步骤。

公开(公告)号：US08910091B2

公开(公告)日：2014-12-09

申请号：US13401820

申请日：2012-02-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50 ,  G03F7/20 ,  G03F1/00

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

摘要翻译： 公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。 该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。