公开(公告)号：US20150053256A1

公开(公告)日：2015-02-26

申请号：US13975723

申请日：2013-08-26

Applicant: E I DU PONT DE NEMOURS AND COMPANY

Inventor： DMITRY POPLAVSKYY ,  Giuseppe Scardera ,  Karim Lotfi Bendimerad ,  Daniel Aneurin Inns

IPC: H01L31/0236

CPC classification number: H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of making a solar cell may include depositing in a first pattern a first ink comprising a first dopant on a back surface of a substrate that is doped with a second dopant being of the same type as the first dopant; then, depositing a second ink comprising a set of undoped semiconductor nanoparticles over the first ink on the back surface of the substrate in a second pattern matching the first pattern; then, heating the semiconductor substrate so that the first dopant diffuses into the substrate and thereby, forms a third pattern of localized doped regions; then, exposing the substrate to a doping ambient comprising a third dopant being of the opposite type to the second dopant, thereby forming a doped semiconductor layer on the front surface and a portion of the back surface not covered by the second ink, and then, removing the deposited ink.

Abstract translation: 制造太阳能电池的方法可以包括：在衬底的背面上以第一掺杂物掺杂与第二掺杂剂相同类型的方式，以第一图案沉积包含第一掺杂剂的第一油墨; 然后以与所述第一图案相匹配的第二图案，将包含一组未掺杂的半导体纳米颗粒的第二墨水沉积在所述基板的背面上的所述第一墨水上; 然后，加热半导体衬底，使得第一掺杂剂扩散到衬底中，由此形成局部掺杂区域的第三图案; 然后将衬底暴露于包含与第二掺杂剂相反类型的第三掺杂剂的掺杂环境中，由此在前表面上形成掺杂半导体层，并且在后表面的一部分未被第二墨水覆盖， 去除沉积的油墨。

公开(公告)号：US09059341B1

公开(公告)日：2015-06-16

申请号：US14161891

申请日：2014-01-23

Applicant: E I DU PONT DE NEMOURS AND COMPANY

Inventor： Giuseppe Scardera ,  Maxim Kelman ,  Shannon Dugan ,  Dmitry Poplavskyy ,  Daniel Aneurin Inns ,  Karim Lotfi Bendimerad

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing an interdigitated back contact solar cell. comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.

Abstract translation: 交错式背接触太阳能电池的制造方法。 包括以下步骤：（a）提供掺杂有第一掺杂剂的硅衬底; （b）以第一图案以第二掺杂剂掺杂硅衬底的后表面; （c）在后表面上形成二氧化硅层; （d）在二氧化硅层上以第二图形沉积包含含硅颗粒的含硅浆料; （e）将所述衬底暴露于扩散环境，其中所述扩散环境包括第三掺杂剂，并且其中所述第三掺杂剂是与所述第二掺杂剂的反掺杂剂; （f）在驱动环境中加热基板; 和（g）从硅衬底去除二氧化硅层和掺杂的硅酸盐玻璃层，其中掺杂有第二掺杂剂的区域和掺杂有第三掺杂剂的区域在硅衬底的后表面上一起形成叉指图案。

公开(公告)号：US20180358145A1

公开(公告)日：2018-12-13

申请号：US15969144

申请日：2018-05-02

Applicant: E I DU PONT DE NEMOURS AND COMPANY

Inventor： Daniel Aneurin Inns ,  Jeffrey J. G. Dee

IPC: H01B1/22 ,  H05K1/02 ,  H05K1/09 ,  H05K3/12 ,  H01B5/14

CPC classification number: H01B1/22 ,  H01B3/302 ,  H01B3/427 ,  H01B5/14 ,  H05K1/028 ,  H05K1/095 ,  H05K3/12 ,  H05K2201/0129 ,  H05K2201/0314 ,  H05K2201/0338

Abstract: This invention is related to a thermoformed article containing a bendable region traversed by an electrical conductor, the electrical conductor comprising a substrate and a two-layer electrical conductor. The two-layer conductor comprises (a) a layer of polymer thick film silver conductor comprising a polymer selected from the group consisting of (i) a mixture of thermoplastic polyurethane and thermoplastic polyhydroxyether and (ii) a thermoplastic polyurethane having a percent elongation of at least 200% and a tensile stress necessary to achieve 100% elongation of less than 1000 pounds per square inch and (b) a layer of polymer thick film silver conductor comprising thermoplastic polyhydroxyether.

公开(公告)号：US20150140725A1

公开(公告)日：2015-05-21

申请号：US14084982

申请日：2013-11-20

Applicant: E I DU PONT DE NEMOURS AND COMPANY

Inventor： GIUSEPPE SCARDERA ,  Dmitry Poplavskyy ,  Daniel Aneurin Inns ,  Karim Lotfi Bendimerad ,  Shannon Dugan

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.

Abstract translation: 一种制造交错式背接触太阳能电池的方法，包括以下步骤：（a）提供掺杂硅衬底; （b）在前表面和后表面上形成第一二氧化硅层; （c）以第一图案在后表面的第一二氧化硅层上沉积含硼掺杂浆料; （d）加热硅衬底; （e）去除第一二氧化硅层; （f）在前表面和后表面上形成第二二氧化硅层; （g）以第二图案在后表面的二氧化层上沉积含磷掺杂浆料; （h）加热硅衬底; 和（i）从硅衬底去除第二二氧化硅层，其中第一图案和第二图案共同形成叉指图案。

公开(公告)号：US09246029B2

公开(公告)日：2016-01-26

申请号：US14627350

申请日：2015-02-20

Applicant: E I DU PONT DE NEMOURS AND COMPANY

Inventor： Giuseppe Scardera ,  Dmitry Poplavskyy ,  Daniel Aneurin Inns ,  Karim Lotfi Bendimerad ,  Shannon Dugan

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/02

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.

Abstract translation: 一种制造交错式背接触太阳能电池的方法，包括以下步骤：（a）提供掺杂硅衬底; （b）以覆盖图案与硼均匀地掺杂衬底的后表面，从而在硅衬底的后表面上形成p +区; （c）在前表面和后表面上形成二氧化硅层; （d）以第二图案在后表面上沉积含磷掺杂浆料; （e）加热硅衬底以将磷局部扩散到硅衬底的后表面中，从而通过第二图案在硅衬底的后表面上形成n +区，其中后面的p +区和n +区 共同形成交错的模式; 和（f）从硅衬底去除第二二氧化硅层。

公开(公告)号：US09048374B1

公开(公告)日：2015-06-02

申请号：US14084982

申请日：2013-11-20

Applicant: E I DU PONT DE NEMOURS AND COMPANY

Inventor： Giuseppe Scardera ,  Dmitry Poplavskyy ,  Daniel Aneurin Inns ,  Karim Lotfi Bendimerad ,  Shannon Dugan

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.

Abstract translation: 一种制造交错式背接触太阳能电池的方法，包括以下步骤：（a）提供掺杂硅衬底; （b）在前表面和后表面上形成第一二氧化硅层; （c）以第一图案在后表面的第一二氧化硅层上沉积含硼掺杂浆料; （d）加热硅衬底; （e）去除第一二氧化硅层; （f）在前表面和后表面上形成第二二氧化硅层; （g）以第二图案在后表面的二氧化层上沉积含磷掺杂浆料; （h）加热硅衬底; 和（i）从硅衬底去除第二二氧化硅层，其中第一图案和第二图案共同形成叉指图案。