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18 条记录 (耗时 0.022 秒)

    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    4.
    发明申请
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 有权
    在硅砂的正面形成网状电极的工艺

    公开(公告)号：US20130276881A1

    公开(公告)日：2013-10-24

    申请号：US13917753

    申请日：2013-06-14

    申请人： E I DU PONT DE NEMOURS AND COMPANY

    发明人： RUSSELL DAVID ANDERSON ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/022433 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  H01B1/16 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属糊剂A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥包含含有0.2至3重量％玻璃的无机物质的金属浆料B 玻璃料覆盖在底部指状线组上，其中金属糊料B以网格图案打印，该网格图案包括（i）薄的平行指线，形成叠加了底部指状线组的顶部一组指纹线，以及（ii）与 指状物为直角，（3）烧制双面印刷的硅晶片，其中金属糊料B的无机物含量比金属膏A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

    Thick film resistive heater compositions comprising Ag and RuO2, and methods of making same
    9.
    发明授权
    Thick film resistive heater compositions comprising Ag and RuO2, and methods of making same 有权
    包含Ag和RuO 2的厚膜电阻加热器组合物及其制备方法

    公开(公告)号：US09431148B2

    公开(公告)日：2016-08-30

    申请号：US14143301

    申请日：2013-12-30

    申请人： E I DU PONT DE NEMOURS AND COMPANY

    发明人： Marc H Labranche ,  Kenneth Warren Hang

    IPC分类号： H01B1/22 ,  C03C3/062 ,  C03C3/064 ,  C03C3/066 ,  C03C8/14 ,  C03C8/16 ,  C03C8/18 ,  H01C17/065 ,  H05B3/12

    CPC分类号： H01B1/22 ,  C03C3/062 ,  C03C3/064 ,  C03C3/066 ,  C03C8/14 ,  C03C8/16 ,  C03C8/18 ,  H01C17/06526 ,  H01C17/06533 ,  H05B3/12

    摘要： Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. Optionally the glass is (by weight) 25-45% SiO2, 2-15% Al2O3, 0-3% ZrO2, 0-8% B2O3, 5-15% CuO, 0-8% BaO, 0-3% P2O5, and 20-50% Bi2O3. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.

    摘要翻译： 公开了厚膜电阻膏组合物和制备厚膜组合物的方法。 组合物包括分散在有机载体中的电阻组合物。 电阻组合物具有3至60重量％的RuO 2导电材料，5至75重量％的Ag导电材料，15至60重量％的玻璃料和任选的至多10重量％的氧化铜或其前体，以及最多20个 重量铋氧化物或其前体。 任选地，玻璃为（重量）25-45％SiO 2，2-15％Al 2 O 3，0-3％ZrO 2，0-8％B 2 O 3，5-15％CuO，0-8％BaO，0-3％P 2 O 5， 和20-50％Bi2O3。 当印刷到干燥厚度并在750℃和950℃之间的温度下烧结时，电阻器组合物的电阻率达10至10,000毫欧/平方厘米，电阻率的热温度系数为1000ppm /℃或更高。 烧结的电阻组合物可以实现0.75至1.50之间的电阻厚度比（Rtr）值。

    Conductive silver paste for a metal-wrap-through silicon solar cell
    10.
    发明授权
    Conductive silver paste for a metal-wrap-through silicon solar cell 有权
    用于金属包裹硅太阳能电池的导电银浆

    公开(公告)号：US09236506B2

    公开(公告)日：2016-01-12

    申请号：US14157201

    申请日：2014-01-16

    申请人： E I DU PONT DE NEMOURS AND COMPANY

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/16 ,  H01B1/22 ,  H01L35/00 ,  H01L31/0224

    CPC分类号： H01L31/02245 ,  H01B1/16 ,  H01B1/22 ,  Y02E10/50

    摘要： A conductive silver via paste comprising particulate conductive silver, a vanadium-phosphorus-antimony-zinc-based-oxide, a tellurium-boron-phosphorus-based-oxide or a tellurium-molybdenum-cerium-based-oxide and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste.

    摘要翻译： 特别是包含导电性银，钒 - 磷 - 锑 - 锌基氧化物，碲 - 硼 - 磷 - 氧化物或碲 - 钼 - 铈 - 氧化物和有机载体的导电银通过糊 可用于提供MWT太阳能电池的硅晶片中的孔的金属化。 结果是在前侧的集电极线与太阳能电池背面的发射极之间的金属导电通孔。 该糊料也可用于在太阳能电池的正面和太阳能电池背面上的发射电极上形成集电极线。 还公开了包含烧结的导电银浆的金属包覆硅太阳能电池。