公开(公告)号：US09905654B2

公开(公告)日：2018-02-27

申请号：US15215414

申请日：2016-07-20

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Dong Yun Jung ,  Hyun Soo Lee ,  Sang Choon Ko ,  Minki Kim ,  Jeho Na ,  Eun Soo Nam ,  Young Rak Park ,  Junbo Park ,  Hyung Seok Lee ,  Hyun-Gyu Jang ,  Chi Hoon Jun

IPC分类号： H01L29/205 ,  H01L29/66 ,  H01L29/872 ,  H01L29/20

CPC分类号： H01L29/205 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/872

摘要： Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.

公开(公告)号：US09748941B2

公开(公告)日：2017-08-29

申请号：US15223826

申请日：2016-07-29

申请人： Electronics and Telecommunications Research Institute

发明人： Minki Kim ,  Hyun-Gyu Jang ,  Dong Yun Jung ,  Sang Choon Ko ,  Hyun Soo Lee ,  Chi Hoon Jun

IPC分类号： H03K17/081 ,  H01L29/778 ,  H01L27/088 ,  H01L29/20

CPC分类号： H03K17/08104 ,  H01L27/0883 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/778 ,  H01L29/7786 ,  H03K17/102 ,  H03K2017/6875

摘要： Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.