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公开(公告)号：US10014401B2
公开(公告)日：2018-07-03
申请号：US15414156
申请日：2017-01-24
发明人： Jeho Na , Hyung Seok Lee , Chi Hoon Jun , Sang Choon Ko , Myungjoon Kwack , Young Rak Park , Woojin Chang , Hyun-Gyu Jang , Dong Yun Jung
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L23/31 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7787 , H01L23/315 , H01L23/3171 , H01L23/3178 , H01L23/3192 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42364 , H01L29/42372 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.
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公开(公告)号：US09905654B2
公开(公告)日：2018-02-27
申请号：US15215414
申请日：2016-07-20
发明人： Dong Yun Jung , Hyun Soo Lee , Sang Choon Ko , Minki Kim , Jeho Na , Eun Soo Nam , Young Rak Park , Junbo Park , Hyung Seok Lee , Hyun-Gyu Jang , Chi Hoon Jun
IPC分类号： H01L29/205 , H01L29/66 , H01L29/872 , H01L29/20
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/66212 , H01L29/872
摘要： Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.
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公开(公告)号：US12013662B2
公开(公告)日：2024-06-18
申请号：US17523197
申请日：2021-11-10
发明人： Jae-Eun Pi , Yong Hae Kim , Jong-Heon Yang , Chul Woong Joo , Chi-Sun Hwang , Ha Kyun Lee , Seung Youl Kang , Gi Heon Kim , Joo Yeon Kim , Hee-ok Kim , Jeho Na , Jaehyun Moon , Won Jae Lee , Seong-Mok Cho , Ji Hun Choi
CPC分类号： G03H1/2249 , G01B11/026 , G06T7/536 , G03H2001/2281 , G03H2210/30 , G03H2222/12 , G03H2223/19 , G06T2207/10028
摘要： An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.
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公开(公告)号：US11424299B2
公开(公告)日：2022-08-23
申请号：US16842396
申请日：2020-04-07
发明人： Ji-Young Oh , Seung Youl Kang , Seongdeok Ahn , Jeong Ik Lee , Chi-Sun Hwang , Byoung-Hwa Kwon , Tae-Youb Kim , Jeho Na , Sooji Nam , Jaehyun Moon , Young Sam Park , Chan Woo Park , Doo-Hee Cho , Chul Woong Joo , Jae-Eun Pi
摘要： Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.
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公开(公告)号：US09613884B2
公开(公告)日：2017-04-04
申请号：US14872868
申请日：2015-10-01
发明人： Chi Hoon Jun , Jeho Na , Dong Yun Jung , Sang Choon Ko , Eun Soo Nam , Hyung Seok Lee
IPC分类号： H01L23/34 , H01L23/467
CPC分类号： H01L23/467
摘要： Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.
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公开(公告)号：US11832486B2
公开(公告)日：2023-11-28
申请号：US17943528
申请日：2022-09-13
发明人： Jong-Heon Yang , Seung Youl Kang , Yong Hae Kim , Hee-ok Kim , Jeho Na , Jaehyun Moon , Chan Woo Park , Himchan Oh , Seong-Mok Cho , Sung Haeng Cho , Ji Hun Choi , Jae-Eun Pi , Chi-Sun Hwang
IPC分类号： H10K59/131 , G09G3/3225 , G09G3/3266 , H10K59/124
CPC分类号： H10K59/131 , G09G3/3225 , G09G3/3266 , G09G2300/0426 , G09G2300/0814 , G09G2300/0842 , H10K59/124
摘要： Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.
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公开(公告)号：US10483300B2
公开(公告)日：2019-11-19
申请号：US15993765
申请日：2018-05-31
发明人： JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
IPC分类号： H01L27/144 , H01L31/113 , H01L31/0336 , G11C13/04 , H01L31/18 , G11C16/04 , G11C16/18 , H01L31/0296
摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
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8.发明申请公开(公告)号：US20180350852A1
公开(公告)日：2018-12-06
申请号：US15993765
申请日：2018-05-31
发明人： JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
IPC分类号： H01L27/144 , H01L31/113 , H01L31/18 , H01L31/0336 , G11C13/04
CPC分类号： H01L27/1443 , G11C13/047 , G11C16/0466 , G11C16/18 , H01L27/1446 , H01L31/0296 , H01L31/0336 , H01L31/1136 , H01L31/18
摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
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公开(公告)号：US09755027B2
公开(公告)日：2017-09-05
申请号：US15265647
申请日：2016-09-14
发明人： Hyung Seok Lee , Ki Hwan Kim , Sang Choon Ko , Zin-Sig Kim , Jeho Na , Eun Soo Nam , Young Rak Park , Junbo Park , Chi hoon Jun , Dong Yun Jung
IPC分类号： H01L29/66 , H01L29/40 , H01L29/778 , H01L29/423 , H01L29/20 , H01L29/417
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66462 , H01L29/7786
摘要： Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.
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