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公开(公告)号:US20210108333A1
公开(公告)日:2021-04-15
申请号:US16464327
申请日:2017-11-30
摘要: A single crystal CVD diamond material is disclosed, the material comprising a total nitrogen concentration of at least 3 ppm as measured by secondary ion mass spectrometry (SIMS); and a low optical birefringence such that in a sample of the single crystal CVD diamond material having an area of at least 1.3 mm×1.3 mm, and measured using a pixel size of area in a range 1×1 μm2 to 20×20 μm2, a maximum value of Δn[average] does not exceed 1.5×10−4, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness. A method of making the material is also disclosed.
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公开(公告)号:US20220154366A1
公开(公告)日:2022-05-19
申请号:US17593200
申请日:2020-03-30
摘要: Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen. Ns0, to total single substitutional nitrogen, Ns, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.
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公开(公告)号:US20200347515A1
公开(公告)日:2020-11-05
申请号:US16962860
申请日:2019-01-24
IPC分类号: C30B25/20 , C30B29/04 , C30B25/04 , B01L3/00 , G01N24/10 , G01R33/30 , G01R33/60 , H01L29/16
摘要: A synthetic diamond material comprises a surface, wherein the surface comprises a first surface region comprising a first concentration of quantum spin defects. A second surface region has a predetermined area and is located adjacent to the first surface region, the second region comprising a second concentration of quantum spin defects. The first concentration of quantum spin defects is at least ten times greater than the second concentration of quantum spin defects, and at least one of the first or second surface regions comprises chemical vapour deposition, CVD, synthetic diamond. A method of producing the synthetic diamond material is also disclosed.
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公开(公告)号:US20220154368A1
公开(公告)日:2022-05-19
申请号:US17593201
申请日:2020-03-30
IPC分类号: C30B29/68 , C30B29/04 , C30B25/20 , C30B25/18 , C23C16/00 , C23C16/27 , C23C16/02 , C23C16/56 , C30B33/00
摘要: A method of forming a diamond composite body and the diamond composite body. A first single crystal diamond body is provided, which contains nitrogen and has a uniform strain such that over an area of at least 1×1 mm, at least 90 percent of points display a modulus of strain-induced shift of NV resonance of less than 200 kHz, wherein each point in the area is a resolved region of 50 μm2. The first single crystal diamond body is treated to convert at least some of the nitrogen to form at least 0.3 ppm nitrogen-vacancy, NV−, centres. A CVD process is used to grow a second single crystal diamond body on a surface of the first single crystal diamond body. The second single crystal diamond body has an NV concentration less than or equal to 10 times lower than the NV− concentration in the first single crystal diamond body.
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