公开(公告)号：US11124746B2

公开(公告)日：2021-09-21

申请号：US16659471

申请日：2019-10-21

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael White ,  Jun Liu ,  Elizabeth Thomas

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/00 ,  C11D3/30 ,  B08B3/08 ,  C11D1/62 ,  C11D1/58 ,  C11D1/90 ,  H01L21/02 ,  C11D3/28

Abstract: The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.

公开(公告)号：US10351809B2

公开(公告)日：2019-07-16

申请号：US15540293

申请日：2016-01-05

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Donald Frye ,  Jun Liu ,  Michael White ,  Danela White ,  Chao-Yu Wang

IPC: C11D3/30 ,  C11D11/00 ,  H01L21/02 ,  B08B3/08 ,  C11D3/20 ,  C11D3/26 ,  C11D3/34 ,  C11D7/32 ,  C11D1/62 ,  H01L21/321 ,  H01L21/768

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US10176979B2

公开(公告)日：2019-01-08

申请号：US14378842

申请日：2013-02-15

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Laisheng Sun ,  Elizabeth Thomas ,  Jason Chang

IPC: H01L21/02 ,  C11D1/72 ,  C11D3/20 ,  C11D1/66 ,  C11D1/22 ,  C11D1/38 ,  B08B3/08 ,  C11D11/00 ,  C11D3/39 ,  C11D7/06 ,  C11D3/04 ,  C11D3/34

Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US11845917B2

公开(公告)日：2023-12-19

申请号：US16694426

申请日：2019-11-25

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Donald Frye ,  Elizabeth Thomas ,  Jun Liu ,  Michael White

IPC: C09K13/00 ,  C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  B08B3/08 ,  C11D7/06 ,  H01L21/02 ,  C11D7/26

CPC classification number: C11D7/3218 ,  B08B3/08 ,  C09K13/00 ,  C11D7/06 ,  C11D7/265 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/02074

Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

公开(公告)号：US11127587B2

公开(公告)日：2021-09-21

申请号：US15116372

申请日：2015-02-03

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Elizabeth Thomas ,  Donald Frye

IPC: H01L21/02 ,  C11D7/06 ,  C11D7/16 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  C11D7/36 ,  C11D7/12 ,  C11D7/04 ,  C11D7/10 ,  C11D7/34

Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

公开(公告)号：US11149235B2

公开(公告)日：2021-10-19

申请号：US16515935

申请日：2019-07-18

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Elizabeth Thomas ,  Jun Liu ,  Michael White ,  Chao-Yu Wang ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02 ,  C11D7/34

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

公开(公告)号：US11085011B2

公开(公告)日：2021-08-10

申请号：US16527809

申请日：2019-07-31

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Michael White ,  Daniela White ,  Atanu Kumar Das

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/30 ,  C11D3/39 ,  C11D3/395 ,  C11D3/20 ,  H01L21/02 ,  C11D3/37 ,  C11D3/22

Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.