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公开(公告)号：US11365351B2
公开(公告)日：2022-06-21
申请号：US17066152
申请日：2020-10-08
Applicant: ENTEGRIS, INC.
Inventor： YoungMin Kim , Michael White , Daniela White , Emanuel I. Cooper , Steven M. Bilodeau
IPC: C09K13/06 , H01L21/311 , H01J37/32
Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.
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公开(公告)号：US11164738B2
公开(公告)日：2021-11-02
申请号：US15874388
申请日：2018-01-18
Applicant: Entegris, Inc.
Inventor： Daniela White , Thomas Parson , Michael White , Emanuel I. Cooper , Atanu Das
Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
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公开(公告)号：US11124746B2
公开(公告)日：2021-09-21
申请号：US16659471
申请日：2019-10-21
Applicant: ENTEGRIS, INC.
Inventor： Daniela White , Michael White , Jun Liu , Elizabeth Thomas
IPC: C11D7/32 , C11D11/00 , C11D3/00 , C11D3/30 , B08B3/08 , C11D1/62 , C11D1/58 , C11D1/90 , H01L21/02 , C11D3/28
Abstract: The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.
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公开(公告)号：US10351809B2
公开(公告)日：2019-07-16
申请号：US15540293
申请日：2016-01-05
Applicant: ENTEGRIS, INC.
Inventor： Elizabeth Thomas , Donald Frye , Jun Liu , Michael White , Danela White , Chao-Yu Wang
IPC: C11D3/30 , C11D11/00 , H01L21/02 , B08B3/08 , C11D3/20 , C11D3/26 , C11D3/34 , C11D7/32 , C11D1/62 , H01L21/321 , H01L21/768
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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公开(公告)号：US20220275276A1
公开(公告)日：2022-09-01
申请号：US17747731
申请日：2022-05-18
Applicant: ENTEGRIS, INC.
Inventor： YoungMin Kim , Michael White , Daniela White , Emanuel I. Cooper , Steven M. Bilodeau
IPC: C09K13/06 , H01L21/311 , H01J37/32
Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.
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Patent Agency Ranking
公开(公告)号：US11124741B2
公开(公告)日：2021-09-21
申请号：US16782912
申请日：2020-02-05
Applicant: ENTEGRIS, INC.
Inventor： Atanu K. Das , Michael White , Daniela White
Abstract: The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.
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公开(公告)号：US10988718B2
公开(公告)日：2021-04-27
申请号：US16308053
申请日：2017-03-09
Applicant: ENTEGRIS, INC. , Thomas Parson , Shrane-Ning Jenq , Steven Medd , Daniela White , Michael White , Donald Frye
Inventor： Thomas Parson , Shrane-Ning Jenq , Steven Medd , Daniela White , Michael White , Donald Frye
IPC: C11D7/32 , C11D11/00 , C11D3/20 , C11D3/37 , H01L21/02 , C11D1/08 , C11D1/00 , C23F1/26 , C23F1/28 , B08B3/08 , C11D3/04 , C11D3/30 , C11D3/32 , C11D3/33
Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
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公开(公告)号：US11845917B2
公开(公告)日：2023-12-19
申请号：US16694426
申请日：2019-11-25
Applicant: ENTEGRIS, INC.
Inventor： Daniela White , Donald Frye , Elizabeth Thomas , Jun Liu , Michael White
CPC classification number: C11D7/3218 , B08B3/08 , C09K13/00 , C11D7/06 , C11D7/265 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/02074
Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.
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公开(公告)号：US10731109B2
公开(公告)日：2020-08-04
申请号：US15951023
申请日：2018-04-11
Applicant: Entegris, Inc.
Inventor： Donald Frye , Jun Liu , Daniela White , Michael White
IPC: C11D3/30 , C11D3/00 , C11D11/00 , C11D3/33 , C11D3/20 , C11D3/36 , H01L21/02 , C11D3/04 , C11D3/28
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
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公开(公告)号：US20180291309A1
公开(公告)日：2018-10-11
申请号：US15951023
申请日：2018-04-11
Applicant: Entegris, Inc.
Inventor： Donald Frye , Jun Liu , Daniela White , Michael White
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
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