公开(公告)号：US11697767B2

公开(公告)日：2023-07-11

申请号：US17341138

申请日：2021-06-07

Applicant: ENTEGRIS, INC.

Inventor： Steven Michael Bilodeau ,  SeongJin Hong ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Emanuel I. Cooper

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/04 ,  C09K13/00 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/306 ,  C23F1/14

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C23F1/14 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.