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    Copper metalized ohmic contact electrode of compound device
    3.
    发明申请
    Copper metalized ohmic contact electrode of compound device 有权
    复合器件​​的铜金属化欧姆接触电极

    公开(公告)号：US20070158844A1

    公开(公告)日：2007-07-12

    申请号：US11377302

    申请日：2006-03-17

    申请人： Cheng-Shih Lee ,  Edward Chang ,  Ke-Shian Chen

    发明人： Cheng-Shih Lee ,  Edward Chang ,  Ke-Shian Chen

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28575

    摘要： The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.

    摘要翻译： 本发明提供了一种用于铜金属化的欧姆接触，其热扩散得到改善并且成本降低。 其中，通过Pd，Ge和Cu的三个金属层的沉积和退火形成欧姆接触; 并且通过三层的厚度来调整欧姆接触的接触电阻。

    Method of fabricating copper metallization on backside of gallium arsenide devices
    4.
    发明申请
    Method of fabricating copper metallization on backside of gallium arsenide devices 审中-公开
    在砷化镓器件背面制造铜金属化的方法

    公开(公告)号：US20050085084A1

    公开(公告)日：2005-04-21

    申请号：US10685600

    申请日：2003-10-16

    申请人： Edward Chang ,  Cheng-Shih Lee

    发明人： Edward Chang ,  Cheng-Shih Lee

    IPC分类号： H01L21/306 ,  H01L21/68 ,  H01L21/768 ,  H01L23/48 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/568 ,  H01L21/02063 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A bi-level structure based on copper metallization technique has been applied to backside of gallium arsenide (GaAs) devices. The foundation where the structure stands on is device substrate backside, on which a layer of diffusion barrier is deposited first, and to the top of it, a layer of copper metallization is plated to enhance device performance. The barrier layer can be selected from tungsten (W), tungsten nitride (WN), or titanium tungsten nitride (TiWN) by sputtering or evaporating, which effectively prevents copper from diffusing into GaAs substrate. The layer of copper metallization, formed by employing anyone of sputtering, evaporating, or electroplating, proves to offer attractive thermal and electrical conductivity and mechanical strength and the like. Moreover, these characteristic improvements coupled with a fascinating part, low cost, would benefit and motivate global GaAs fabs.

    摘要翻译： 基于铜金属化技术的双层结构已被应用于砷化镓（GaAs）器件的背面。 结构所在的基础是器件衬底背面，其上首先沉积一层扩散阻挡层，并且在其顶部镀有一层铜金属化以增强器件性能。 阻挡层可以通过溅射或蒸发从钨（W），氮化钨（WN）或氮化钨（TiWN）中选择，这有效地防止铜扩散到GaAs衬底中。 通过使用任何溅射，蒸发或电镀形成的铜金属化层证明提供有吸引力的热导和导电性和机械强度等。 此外，这些特征改进加上迷人的部分，低成本，将有利于并激励全球砷化镓晶圆厂。

    [ADJUSTABLE COLLIMATOR AND SPUTTERING APPARATUS WITH THE SAME]
    5.
    发明申请
    [ADJUSTABLE COLLIMATOR AND SPUTTERING APPARATUS WITH THE SAME] 审中-公开
    [可调式收卷机及其相关设备]

    公开(公告)号：US20050194545A1

    公开(公告)日：2005-09-08

    申请号：US10709487

    申请日：2004-05-10

    申请人： Cheng-Shih Lee ,  Edward Yi Chang

    发明人： Cheng-Shih Lee ,  Edward Yi Chang

    IPC分类号： C25B9/00 ,  G01N21/01 ,  G21K5/00 ,  H01L21/363

    CPC分类号： H01J37/34 ,  H01J37/3447

    摘要： An adjustable collimator and a sputtering apparatus with the same are provided. The adjustable collimator comprises an adjustable main body, first and second collimating elements. The adjustable main body has an interior space, a top portion, a bottom portion and an adjuster between the top portion and the bottom portion. The adjuster is adapted for adjusting a relative distance between the top portion and the bottom portion. A first collimating element fixed inside the interior space of the top portion in a manner to move with the top portion and a second collimating element fixed inside the interior space of the bottom portion to move with the bottom portion. When the adjustable collimator applies to sputtering apparatus, it can easily control the incident angel of the molecule of the sputtering material by adjusting a relative distance between the top and bottom portion.

    摘要翻译： 提供了一种可调准直器和具有该准直器的溅射装置。 可调节准直器包括可调主体，第一和第二准直元件。 可调主体在顶部和底部之间具有内部空间，顶部，底部和调节器。 调节器适于调节顶部和底部之间的相对距离。 第一准直元件以顶部移动的方式固定在顶部的内部空间内部，固定在底部的内部空间内的第二准直元件与底部一起移动。 当可调整准直器适用于溅射装置时，可以通过调节顶部和底部之间的相对距离来容易地控制溅射材料的分子的入射角。

    Copper metalized ohmic contact electrode of compound device
    6.
    发明授权
    Copper metalized ohmic contact electrode of compound device 有权
    复合器件​​的铜金属化欧姆接触电极

    公开(公告)号：US07368822B2

    公开(公告)日：2008-05-06

    申请号：US11377302

    申请日：2006-03-17

    申请人： Cheng-Shih Lee ,  Edward Yi Chang ,  Ke-Shian Chen

    发明人： Cheng-Shih Lee ,  Edward Yi Chang ,  Ke-Shian Chen

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28575

    摘要： The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.

    摘要翻译： 本发明提供了一种用于铜金属化的欧姆接触，其热扩散得到改善并且成本降低。 其中，通过Pd，Ge和Cu的三个金属层的沉积和退火形成欧姆接触; 并且通过三层的厚度来调整欧姆接触的接触电阻。

    Package Structure for Solid-State Lighting with Low Thermal Resistance
    8.
    发明申请
    Package Structure for Solid-State Lighting with Low Thermal Resistance 审中-公开
    具有低热阻的固态照明的封装结构

    公开(公告)号：US20100181891A1

    公开(公告)日：2010-07-22

    申请号：US12688964

    申请日：2010-01-18

    申请人： Cheng-Shih Lee ,  Hsin-Yi Hsieh ,  Shen-Chang Lin ,  Chou-Chih Yin

    发明人： Cheng-Shih Lee ,  Hsin-Yi Hsieh ,  Shen-Chang Lin ,  Chou-Chih Yin

    IPC分类号： H01J61/52

    CPC分类号： H05K1/0203 ,  H01L33/642 ,  H01L2224/48091 ,  H05K1/0306 ,  H05K1/141 ,  H05K3/0061 ,  H05K2201/0338 ,  H05K2201/10106 ,  H01L2924/00014

    摘要： A package structure for solid-state lighting with low thermal resistance is revealed. A solid-state light is set on a circuit board with high thermal conductivity. A connection layer is used for binding the circuit board with high thermal conductivity and the heat sink substrate. A first attachment layer is set between the heat sink substrate and the connection layer; and a second attachment is set between the connection layer and the circuit board with high thermal conductivity. The connection layer is made of metals or metallic composite materials with high heat dissipation and low thermal expansion coefficients. Thereby, the thermal resistance is lower than the structures according to the prior art. In addition, the thermal stress produced between the heat sink substrate and the circuit board with high thermal conductivity can be buffered by the connection layer for increasing lifetime of the package structure according to the present invention.

    摘要翻译： 揭示了具有低热阻的固态照明的封装结构。 固态光被设置在具有高导热性的电路板上。 连接层用于结合具有高导热性的电路板和散热基板。 第一附接层设置在散热基板和连接层之间; 并且在连接层和具有高导热性的电路板之间设置第二附件。 连接层由具有高散热性和低热膨胀系数的金属或金属复合材料制成。 因此，热阻低于现有技术的结构。 此外，散热基板和具有高热导率的电路板之间产生的热应力可以通过连接层进行缓冲，以增加根据本发明的封装结构的使用寿命。

    Schottky structure in GaAs semiconductor device
    10.
    发明授权
    Schottky structure in GaAs semiconductor device 有权
    GaAs半导体器件中的肖特基结构

    公开(公告)号：US06787910B2

    公开(公告)日：2004-09-07

    申请号：US10200118

    申请日：2002-07-23

    申请人： Cheng-Shih Lee ,  Yi Chang

    发明人： Cheng-Shih Lee ,  Yi Chang

    IPC分类号： H01L2131

    CPC分类号： H01L29/66863 ,  H01L23/4821 ,  H01L27/0605 ,  H01L29/475 ,  H01L29/812 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.

    摘要翻译： 本发明提供了砷化镓（GaAs）半导体器件中的肖特基结构，其包括砷化镓（GaAs）半导体衬底，在所述砷化镓（GaAs）半导体衬底的表面上的钛（Ti）层，以形成肖特基接触， 在所述钛（Ti）层的表面上的阻挡金属扩散的扩散阻挡层和在所述扩散阻挡层的表面上的第一铜层。