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    Time of flight energy measurement apparatus for an ion beam implanter
    1.
    发明授权
    Time of flight energy measurement apparatus for an ion beam implanter 有权
    离子束注入机的飞行时间能量测量装置

    公开(公告)号：US6137112A

    公开(公告)日：2000-10-24

    申请号：US150177

    申请日：1998-09-10

    申请人： Edward K. McIntyre ,  Kevin W. Wenzel ,  David R. Swenson ,  Ernst F. Scherer ,  William F. Divergilio ,  Kourosh Saadatmand

    发明人： Edward K. McIntyre ,  Kevin W. Wenzel ,  David R. Swenson ,  Ernst F. Scherer ,  William F. Divergilio ,  Kourosh Saadatmand

    IPC分类号： H01L21/66 ,  C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01J49/40 ,  H01J49/44 ,  H01L21/265 ,  H01J37/244

    CPC分类号： H01J49/40 ,  H01J37/304 ,  H01J37/3171

    摘要： An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor. The timing circuitry of the energy measurement apparatus is electrically coupled to the first and second sensors and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors. The timing circuitry calculates an average number of ion pulses, N, in the ion beam between the first and second sensors based on the approximation of the ion beam energy and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset)=N.times.T. The timing circuitry than determines the elapsed time, t. The conversion circuitry converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam.

    摘要翻译： 包括用于测量和控制离子束的能量的飞行时间能量测量装置的离子注入机包括用于产生离子束的离子源，用于加速所述束的束的离子加速组件，所述离子加速组件包括一系列具有 预定的频率和波束形成和引导结构，用于将离子束引导到支撑在注入机的植入室中的工件上。 飞行时间能量测量装置包括间隔开的第一和第二传感器，定时电路和转换电路。 飞行时间能量测量装置测量离子束的选定离子脉冲中包含的离子的平均动能。 第一传感器和第二传感器邻近离子束设置并间隔预定距离，第二传感器位于第一传感器的下游。 当离子束的离子脉冲通过第一传感器时，第一传感器产生信号，当离子束的离子脉冲通过第二传感器时，第二传感器产生信号。 能量测量装置的定时电路电耦合到第一和第二传感器，并且确定所选离子脉冲经过第一和第二传感器之间的预定距离的经过时间t。 定时电路基于离子束能量的近似计算第一和第二传感器之间的离子束中的离子脉冲的平均数目N，并且使用该离子脉冲计算所选离子脉冲的偏移时间t（偏移） 公式，t（offset）= NxT。 定时电路确定经过的时间t。 转换电路将所选择的离子脉冲的经过时间t转换成离子束的能量的量度。

    Ion beam scanning systems and methods for improved ion implantation uniformity
    4.
    发明授权
    Ion beam scanning systems and methods for improved ion implantation uniformity 有权
    离子束扫描系统和改善离子注入均匀性的方法

    公开(公告)号：US06903350B1

    公开(公告)日：2005-06-07

    申请号：US10865061

    申请日：2004-06-10

    申请人： Bo H. Vanderberg ,  Andrew M. Ray ,  Kevin W. Wenzel

    发明人： Bo H. Vanderberg ,  Andrew M. Ray ,  Kevin W. Wenzel

    IPC分类号： H01J37/317 ,  H01L21/324

    CPC分类号： H01J37/3171 ,  H01J2237/21

    摘要： Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.

    摘要翻译： 提供了离子注入系统及其扫描系统，其中提供了焦点调节装置以动态地调整离子束的聚焦特性以补偿扫描仪的至少一个时变焦点特性。 提供了用于向工件提供扫描离子束的方法，包括动态地调整离子束的聚焦特性，扫描离子束以产生扫描离子束，以及将扫描的离子束引向工件。

    Method and system for ion beam containment using photoelectrons in an ion beam guide
    5.
    发明授权
    Method and system for ion beam containment using photoelectrons in an ion beam guide 失效
    离子束导向器中使用光电子的离子束收容的方法和系统

    公开(公告)号：US06891174B2

    公开(公告)日：2005-05-10

    申请号：US10632234

    申请日：2003-07-31

    申请人： Kevin W. Wenzel ,  Bo H. Vanderberg

    发明人： Kevin W. Wenzel ,  Bo H. Vanderberg

    IPC分类号： G21K1/14 ,  H01J37/02 ,  H01J37/317

    CPC分类号： H01J37/026 ,  H01J37/3171 ,  H01J2237/0041

    摘要： Ion implantation systems and beam containment apparatus therefor are provided in which a photoelectron source and a photon source are provided along a beam path. The photon source, such as a UV lamp, provides photons to a photoemissive material of the photoelectron source to generate photoelectrons for enhanced beam containment in the ion implantation system.

    摘要翻译： 提供了离子注入系统和其束保护装置，其中光束源和光子源沿光束路径设置。 光子源（例如UV灯）向光电子源的光发射材料提供光子，以产生用于在离子注入系统中增强的束保持的光电子。