公开(公告)号：US20120273689A1

公开(公告)日：2012-11-01

申请号：US13543804

申请日：2012-07-07

Applicant: Neal T. Sullivan ,  Anton Tremsin ,  Philippe de Rouffignac ,  David Beaulieu ,  Kourosh Saadatmand ,  Steve Bachman ,  Ken Stenton

Inventor： Neal T. Sullivan ,  Anton Tremsin ,  Philippe de Rouffignac ,  David Beaulieu ,  Kourosh Saadatmand ,  Steve Bachman ,  Ken Stenton

IPC: G01T3/00

CPC classification number: H01J43/246 ,  G01T3/08

Abstract: A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

Abstract translation: 用于检测中子的微通道板包括富氢聚合物基底，其限定从基底的顶表面延伸到基底的底表面的多个通道，其中中子与多个通道相互作用以产生至少一个二次电子 。 顶部电极位于衬底的顶表面上，底部电极位于衬底的底表面上。 电阻层形成在多个通道的外表面上，其提供基本恒定的电阻率的欧姆导电。 在电阻层上形成发光层。 中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子，以提供与中子检测有关的放大信号。

公开(公告)号：US07723707B2

公开(公告)日：2010-05-25

申请号：US11781700

申请日：2007-07-23

Applicant: Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

Inventor： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

IPC: G21G1/00

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055

Abstract: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

Abstract translation: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

公开(公告)号：US06583429B2

公开(公告)日：2003-06-24

申请号：US10224778

申请日：2002-08-21

Applicant: Kourosh Saadatmand ,  William F. DiVergilio

Inventor： Kourosh Saadatmand ,  William F. DiVergilio

IPC: B01D5944

CPC classification number: H05H7/18 ,  H01J37/3171 ,  H01J2237/04737

Abstract: An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

公开(公告)号：US20100044577A1

公开(公告)日：2010-02-25

申请号：US12392064

申请日：2009-02-24

Applicant: Neal T. Sullivan ,  Anton Tremsin ,  Phiippe De Rouffignac ,  David Beaulieu ,  Kourosh Saadatmand ,  Steve Bachman ,  Ken Stenton

Inventor： Neal T. Sullivan ,  Anton Tremsin ,  Phiippe De Rouffignac ,  David Beaulieu ,  Kourosh Saadatmand ,  Steve Bachman ,  Ken Stenton

IPC: G01T3/00

CPC classification number: H01J43/246 ,  G01T3/08

Abstract: A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

Abstract translation: 用于检测中子的微通道板包括富氢聚合物基底，其限定从基底的顶表面延伸到基底的底表面的多个通道，其中中子与多个通道相互作用以产生至少一个二次电子 。 顶部电极位于衬底的顶表面上，底部电极位于衬底的底表面上。 电阻层形成在多个通道的外表面上，其提供基本恒定的电阻率的欧姆导电。 在电阻层上形成发光层。 中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子，以提供与中子检测有关的放大信号。

公开(公告)号：US07267520B2

公开(公告)日：2007-09-11

申请号：US11099022

申请日：2005-04-05

Applicant: Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

Inventor： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

IPC: B66F9/00

CPC classification number: H01L21/67069 ,  H01J2237/20228 ,  H01J2237/31701

Abstract: The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Abstract translation: 本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

公开(公告)号：US20050254932A1

公开(公告)日：2005-11-17

申请号：US11099022

申请日：2005-04-05

Applicant: Peter Kellerman ,  Victor Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas Brown

Inventor： Peter Kellerman ,  Victor Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas Brown

IPC: B66F9/00 ,  H01L21/00

CPC classification number: H01L21/67069 ,  H01J2237/20228 ,  H01J2237/31701

Abstract: The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Abstract translation: 本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

公开(公告)号：US06608315B1

公开(公告)日：2003-08-19

申请号：US09703769

申请日：2000-11-01

Applicant: Kourosh Saadatmand ,  Michael A. Graf ,  Edward K. McIntyre

Inventor： Kourosh Saadatmand ,  Michael A. Graf ,  Edward K. McIntyre

IPC: H01J37317

CPC classification number: H01J37/3171 ,  H01J2237/028 ,  H05H7/00

Abstract: A mass analysis magnet assembly (16) is provided for use in an ion implanter (10), comprising: (i) a magnet (44) for mass analyzing an ion beam (15) output by an ion source (14), the magnet providing an interior region (49) through which the ion beam passes; and (ii) at least one strike plate (48) in part forming an outer boundary of the interior region (49). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source (14). The strike plate (48) may comprise an upper layer (56) of isotopically pure carbon C-12 isotope positioned atop a lower substrate (54).

Abstract translation: 提供用于离子注入机（10）的质量分析磁体组件（16），其包括：（i）用于质量分析由离子源（14）输出的离子束（15）的磁体（44），所述磁体 提供离子束通过的内部区域（49）; 和（ii）部分地形成内部区域（49）的外边界的至少一个冲击板（48）。 至少一个冲击板由同位素纯的碳基材料组成。 同位素纯碳基材料，优选质量大于99％的碳C-12，当从离子源（14）提取的氘核撞击时，可防止中子辐射。 冲击板（48）可以包括位于下基板（54）顶部的同位素纯碳C-12同位素的上层（56）。

公开(公告)号：US08237129B2

公开(公告)日：2012-08-07

申请号：US12392064

申请日：2009-02-24

Applicant: Neal T. Sullivan ,  Anton Tremsin ,  Philippe de Rouffignac ,  David Beaulieu ,  Kourosh Saadatmand ,  Steve Bachman ,  Ken Stenton ,  Dmitry Gorelikov

Inventor： Neal T. Sullivan ,  Anton Tremsin ,  Philippe de Rouffignac ,  David Beaulieu ,  Kourosh Saadatmand ,  Steve Bachman ,  Ken Stenton ,  Dmitry Gorelikov

IPC: G01T3/00

CPC classification number: H01J43/246 ,  G01T3/08

Abstract: A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

Abstract translation: 用于检测中子的微通道板包括富氢聚合物基底，其限定从基底的顶表面延伸到基底的底表面的多个通道，其中中子与多个通道相互作用以产生至少一个二次电子 。 顶部电极位于衬底的顶表面上，底部电极位于衬底的底表面上。 电阻层形成在多个通道的外表面上，其提供基本恒定的电阻率的欧姆导电。 在电阻层上形成发光层。 中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子，以提供与中子检测有关的放大信号。

公开(公告)号：US07394079B2

公开(公告)日：2008-07-01

申请号：US11275772

申请日：2006-01-27

Applicant: Kourosh Saadatmand ,  Peter L. Kellerman

Inventor： Kourosh Saadatmand ,  Peter L. Kellerman

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/0492

Abstract: An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.

Abstract translation: 公开了一种带状离子束离子注入机系统的结构。 在一个实施例中，该架构包括用于接收扇形带状离子束的加速/减速并行化透镜系统，并且至少将扇形带状离子束并行（并且也可能加速或减速）到基本上平行的带状离子束中，并且能量 过滤系统在加速/减速并行化透镜系统的下游，以及待通过基本上平行的带状离子束植入的工件之前。 加速/减速并行化透镜系统包括用于至少并行（也可能加速或减速）扇形带状离子束和用于加速或减速基本上平行的带状离子束的加速/减速透镜的透镜。 并行化透镜允许将高电流带状离子束以能够向下延伸至低至约200eV的能量传递到工件。 能量过滤系统提供基本上没有能量污染的基本平行的带状离子束。

公开(公告)号：US06635890B2

公开(公告)日：2003-10-21

申请号：US10224779

申请日：2002-08-21

Applicant: Kourosh Saadatmand ,  William F. DiVergilio

Inventor： Kourosh Saadatmand ,  William F. DiVergilio

IPC: H01J37317

CPC classification number: H05H7/18 ,  H01J37/3171 ,  H01J2237/04737 ,  H01J2237/04924

Abstract: An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

Abstract translation: 公开了用于在离子注入系统中聚束离子的用于线性加速器系统的离子聚束器级。 可以在一个或多个加速阶段的上游使用离子聚束器阶段，使得线性加速器系统中的离子的损失减少。 本发明还包括不对称双间隙聚束器阶段，以及用于进一步提高离子注入效率的狭缝分束器台。 还公开了用于在离子注入机线性加速器中加速离子的方法。