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公开(公告)号：US5720809A
公开(公告)日：1998-02-24
申请号：US510436
申请日：1995-08-02
CPC分类号： C30B15/02 , C30B15/12 , Y10S117/90 , Y10T117/1052
摘要： A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm. In the crucible of this invention, the produced silicon single crystal enjoys improved quality and the operation of pulling enjoys enhanced yield because the cylindrical partition wall is softened or deformed only sparingly by the intense heat emanating from the molten mass of silicon. Since the cylindrical partition wall does not readily soften or deform on exposure to the heat, the partition wall can be fixed in place with a simple construction and the whole apparatus for the operation of pulling enjoys simplicity of construction and low cost of production.
摘要翻译： 公开了一种双壁坩埚，其通过在外坩埚中同轴设置圆筒形分隔壁而构成，用于将硅熔体作为原料保持，并通过加热外坩埚进行操作，同时将原料硅供应到 外坩埚和圆柱形分隔壁，并将由此产生的硅熔融物质通过下列通道引导到圆筒形分隔壁的内部，该通道位于将外坩埚与圆柱形分隔壁的内侧相互连接的熔融物质层的下方 同时从圆柱形分隔壁的硅熔融体中拉出单晶棒。 在该双壁坩埚中，至少圆筒形分隔壁由羟基（OH基）含量为30ppm以下的石英玻璃构成。 在本发明的坩埚中，所生产的硅单晶具有改进的质量，并且由于由熔融硅团发出的强烈热量，圆柱形分隔壁被轻微软化或变形，所以拉伸操作具有提高的产量。 由于圆柱形分隔壁在暴露于热量时不容易软化或变形，因此能够以简单的结构将分隔壁固定就位，并且用于拉动操作的整个装置具有简单的结构和低成本的生产。
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公开(公告)号：US5340434A
公开(公告)日：1994-08-23
申请号：US11744
申请日：1993-02-01
摘要： A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.
摘要翻译： 公开了一种制造硅单晶的方法，其包括以下步骤：在坩埚中提供硅熔体，将硅多晶硅晶粒提供给硅熔体，并从硅熔体中提取硅单晶。 硅多晶体颗粒中的残留氢浓度大于10ppmwt且小于100ppmwt。 该方法防止硅单晶多晶。
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公开(公告)号：US5871583A
公开(公告)日：1999-02-16
申请号：US773351
申请日：1996-12-26
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to form a portion of the periphery of an ellipse drawn about two foci which are composed of the upper end of a heater and a point of the longitudinal axis of a silicon single crystal being grown. The inside surface has a low emissivity. With the apparatus thus constructed, a silicon single crystal having a high dielectric breakdown strength of oxide film (SiO.sub.2) can be produced in a stable manner with high yield and productivity.
摘要翻译： 用于生产通过切克劳斯基法生长的单晶硅的装置包括：主室，其具有将侧壁的上端和主室的颈部的下端相互连接的圆形的钢桶。 圆形肩部具有内表面，所述内表面被成形为形成围绕两个焦点的椭圆的周边的一部分，该两个焦点由加热器的上端和生长的硅单晶的纵向轴线的点组成。 内表面发射率低。 利用如此构造的装置，可以以高产率和生产率以稳定的方式制造具有高的氧化膜（SiO 2）的介电击穿强度的硅单晶。
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4.发明授权Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus 失效用于半导体单晶拉制装置的颗粒状原料的供给装置
公开(公告)号：US5462010A
公开(公告)日：1995-10-31
申请号：US961182
申请日：1992-10-14
CPC分类号： B01J8/002 , C30B15/02 , Y10T117/1056
摘要： An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity and weight, a subhopper having an intermediate capacity and weight and providing a passage from said tank to said main hopper, and a weight sensor for detecting the weight of the main hopper, wherein the overall weight of the main hopper is measured to obtain the flow rate (supply rate) of the granular polycrystal silicon.
摘要翻译： 一种用于连续地向半导体单晶拉制装置的坩埚供应颗粒状多晶硅的装置，包括具有相对较大容量的漏斗形罐，具有相对较小容量和重量的主料斗，具有中等容量和重量的踢脚板 并且从所述罐提供到所述主料斗的通道，以及用于检测主料斗重量的重量传感器，其中测量主料斗的总重量以获得颗粒状多晶硅的流量（供给速率）。
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公开(公告)号：US5361721A
公开(公告)日：1994-11-08
申请号：US012172
申请日：1993-02-02
CPC分类号： C30B15/00 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068
摘要： A single crystal pulling apparatus of Czochralski technique type including (i) a cylindrical partition adapted to divide the surface portion of the melt into an inner part and an outer part, the former being where the single crystal is grown and the latter being where granular polycrystal material is supplied, (ii) a flat ring having heat reflecting and insulating property held horizontally above the melt, and (iii) a vertically shiftable purge tube suspended centrally into the heating chamber adapted to enter into the inner hole of the flat ring.
摘要翻译： Czochralski技术类型的单晶拉制装置包括（i）适于将熔体的表面部分分成内部和外部的圆柱形分隔件，前者是单晶生长的区域，后者是颗粒状多晶体 提供材料，（ii）具有热熔和绝缘性能的平坦环，其水平地保持在熔体上方，以及（iii）垂直移动的清洗管，其中心地悬置在加热室内，适于进入平环的内孔。
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公开(公告)号：US5373805A
公开(公告)日：1994-12-20
申请号：US961764
申请日：1992-10-15
CPC分类号： C30B15/00 , C30B15/14 , Y10T117/1032 , Y10T117/1056
摘要： A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring is connected to the lower end of the purge tube, and a cylindrical quartz partition ring made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.
摘要翻译： 一种基于切克劳斯基技术的单晶拉制装置，其具有用于向坩埚中连续供应颗粒状多晶材料的导管和悬浮在加热室中心的垂直吹扫管，其中，吹扫管是可垂直移动的; 隔热环连接到吹扫管的下端，并且由不含气泡的石英玻璃制成的圆柱形石英隔壁由隔热环垂直地保持，使得石英隔板环的下端 基本上低于吹扫管的下端，使得通过浸入多晶熔体中，分隔环将熔体的内表面与熔体的外表面隔开，在其后倾倒颗粒状多晶材料。
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7.发明授权
公开(公告)号：US5980630A
公开(公告)日：1999-11-09
申请号：US81665
申请日：1998-05-20
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。
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公开(公告)号：US5735951A
公开(公告)日：1998-04-07
申请号：US673590
申请日：1996-07-01
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1068
摘要： A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.
摘要翻译： 消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。 绝热板与隔离阀的打开或关闭同步运行。 隔热板防止来自下部室的热气体与隔离阀直接接触。 防止隔离阀过热，提供良好的单晶的平稳运行和生长。
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9.发明授权
公开(公告)号：US6120749A
公开(公告)日：2000-09-19
申请号：US101941
申请日：1998-07-17
CPC分类号： C30B29/06 , C30B15/00 , Y10S257/913
摘要： A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided. In this process, the silicon single crystal which is being grown by the Czochralski method is pulled at a rate which is 80 to 60% of the critical pull rate inherent in the pulling apparatus.
摘要翻译： PCT No.PCT / JP97 / 00090 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年1月17日PCT PCT。 WO97 / 26393 PCT出版物 日期1997年7月24日提供直径为6英寸或更大并且提高了氧化膜的绝缘击穿强度的硅单晶晶片，特别是其周边部分，从而提高了每片晶片产生的器件芯片的产量。 该晶片在其周边区域中的氧化膜的介电击穿强度方面没有晶体缺陷，其从圆周延伸并占总面积的50％，特别是从圆周延伸到相隔30mm的圆 从圆周。 提供了一种用于通过切克劳斯斯克方法生产硅单晶的方法，其提供了特别在其周边部分提高氧化膜的介电击穿强度的硅单晶晶片，而不会显着降低生产效率。 在这个过程中，以切克劳斯基法生长的硅单晶以牵引装置固有的临界拉伸速率的80％至60％的速率被拉伸。
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公开(公告)号：US5792255A
公开(公告)日：1998-08-11
申请号：US655201
申请日：1996-05-30
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。
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