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    MAGNETIC RANDOM ACCESS MEMORY
    1.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性随机存取存储器

    公开(公告)号：US20130037862A1

    公开(公告)日：2013-02-14

    申请号：US13429088

    申请日：2012-03-23

    申请人： Eiji KITAGAWA ,  Naoharu SHIMOMURA ,  Tsuneo INABA

    发明人： Eiji KITAGAWA ,  Naoharu SHIMOMURA ,  Tsuneo INABA

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic random access memory includes a plurality of magnetoresistance elements. The plurality of magnetoresistance elements each include a recording layer having magnetic anisotropy perpendicular to a film surface, and a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization direction, and a first nonmagnetic layer formed between the recording layer and the reference layer. The recording layer is physically separated for each of the plurality of magnetoresistance elements. The reference layer and the first nonmagnetic layer continuously extend over the plurality of magnetoresistance elements.

    摘要翻译： 根据一个实施例，磁性随机存取存储器包括多个磁阻元件。 多个磁阻元件各自包括垂直于膜表面的磁各向异性的记录层和可变磁化方向，具有垂直于膜表面的磁各向异性的参考层和不变的磁化方向，以及形成在第一非磁性层之间的第一非磁性层 记录层和参考层。 对于多个磁阻元件中的每一个物理地分离记录层。 参考层和第一非磁性层在多个磁阻元件上连续延伸。

    MAGNETORESISTIVE EFFECT MEMORY
    2.
    发明申请
    MAGNETORESISTIVE EFFECT MEMORY 有权
    磁电效应记忆

    公开(公告)号：US20100246244A1

    公开(公告)日：2010-09-30

    申请号：US12748785

    申请日：2010-03-29

    申请人： Naoharu SHIMOMURA ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

    发明人： Naoharu SHIMOMURA ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

    IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/10

    CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693

    摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.

    摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。

    MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY
    4.
    发明申请
    MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY 有权
    磁性器件和磁性存储器

    公开(公告)号：US20130028011A1

    公开(公告)日：2013-01-31

    申请号：US13424769

    申请日：2012-03-20

    申请人： Eiji KITAGAWA ,  Naoharu SHIMOMURA ,  Hiroaki Yoda ,  Junichi ITO ,  Minoru AMANO ,  Chikayoshi KAMATA ,  Keiko ABE

    发明人： Eiji KITAGAWA ,  Naoharu SHIMOMURA ,  Hiroaki Yoda ,  Junichi ITO ,  Minoru AMANO ,  Chikayoshi KAMATA ,  Keiko ABE

    IPC分类号： G11C11/16

    CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

    摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.

    摘要翻译： 实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层 磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件 布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

    MAGNETIC MEMORY
    6.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20130250666A1

    公开(公告)日：2013-09-26

    申请号：US13719896

    申请日：2012-12-19

    申请人： Naoharu SHIMOMURA

    发明人： Naoharu SHIMOMURA

    IPC分类号： G11C11/16

    CPC分类号： G11C11/16 ,  G11C11/02 ,  G11C11/161

    摘要： A magnetic memory according to an embodiment includes: a first MTJ element including a first storage layer including a first magnetic film having a changeable magnetization direction, a first reference layer including a second magnetic film having a fixed magnetization direction, and a first tunnel barrier layer provided therebetween; and a second MTJ element including a second storage layer including a third magnetic film having a changeable magnetization direction and magnetically connected to the first storage layer, a second reference layer including a fourth magnetic film having a fixed magnetization direction parallel to the magnetization direction of the first reference layer, and a second tunnel barrier layer provided therebetween, the second MTJ element being arranged in parallel with the first MTJ element in a direction perpendicular to a stacking direction of the first MTJ element.

    摘要翻译： 根据实施例的磁存储器包括：第一MTJ元件，包括第一存储层，包括具有可变磁化方向的第一磁性膜，第一参考层，包括具有固定的磁化方向的第二磁性膜，以及第一隧道势垒层 设置在其间; 以及第二MTJ元件，包括第二存储层，其包括具有可变磁化方向的第三磁性膜，并且磁性地连接到第一存储层;第二参考层，包括具有与第一存储层的磁化方向平行的固定磁化方向的第四磁性膜 第一参考层和设置在其间的第二隧道势垒层，第二MTJ元件在垂直于第一MTJ元件的层叠方向的方向上与第一MTJ元件平行地布置。

    RESISTANCE CHANGE TYPE MEMORY
    7.
    发明申请
    RESISTANCE CHANGE TYPE MEMORY 审中-公开
    电阻变化型存储器

    公开(公告)号：US20110002157A1

    公开(公告)日：2011-01-06

    申请号：US12881919

    申请日：2010-09-14

    申请人： Naoharu SHIMOMURA ,  Yoshiaki Asao

    发明人： Naoharu SHIMOMURA ,  Yoshiaki Asao

    IPC分类号： G11C11/21 ,  G11C11/02

    CPC分类号： G11C13/0069 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/0028 ,  G11C13/003 ,  G11C2013/0078 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/74

    摘要： A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected to the first drive line and a cathode connected to other end of the first resistance change element, a second diode having an anode connected to other end of the first resistance change element and a cathode connected to the second drive line, and a driver/sinker which supplies a write current to the resistance change element. A write control circuit is arranged such that when first data is written, the write current is caused to flow in a direction from the first drive line to the third drive line, and when second data is written, the write current is caused to flow in a direction from the third drive line to the second drive line.

    摘要翻译： 电阻变化型存储器包括第一，第二和第三驱动线，电阻改变元件，其一端连接到第三驱动线，第一二极管，具有连接到第一驱动线的阳极和连接到第一驱动线的另一端的阴极 电阻变化元件，具有连接到第一电阻变化元件的另一端的阳极和连接到第二驱动线的阴极的第二二极管，以及向电阻变化元件提供写入电流的驱动器/沉降片。 写控制电路被布置成使得当第一数据被写入时，使写入电流在从第一驱动线到第三驱动线的方向上流动，并且当写入第二数据时，使写入电流流入 从第三驱动线到第二驱动线的方向。

    RESISTANCE CHANGE TYPE MEMORY
    8.
    发明申请
    RESISTANCE CHANGE TYPE MEMORY 有权
    电阻变化型存储器

    公开(公告)号：US20090180310A1

    公开(公告)日：2009-07-16

    申请号：US12350477

    申请日：2009-01-08

    申请人： Naoharu SHIMOMURA ,  Yoshiaki ASAO

    发明人： Naoharu SHIMOMURA ,  Yoshiaki ASAO

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/0028 ,  G11C13/003 ,  G11C2013/0078 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/74

    摘要： A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected to the first drive line and a cathode connected to other end of the first resistance change element, a second diode having an anode connected to other end of the first resistance change element and a cathode connected to the second drive line, and a driver/sinker which supplies a write current to the resistance change element. A write control circuit is arranged such that when first data is written, the write current is caused to flow in a direction from the first drive line to the third drive line, and when second data is written, the write current is caused to flow in a direction from the third drive line to the second drive line.

    摘要翻译： 电阻变化型存储器包括第一，第二和第三驱动线，电阻改变元件，其一端连接到第三驱动线，第一二极管，具有连接到第一驱动线的阳极和连接到第一驱动线的另一端的阴极 电阻变化元件，具有连接到第一电阻变化元件的另一端的阳极和连接到第二驱动线的阴极的第二二极管，以及向电阻变化元件提供写入电流的驱动器/沉降片。 写控制电路被布置成使得当第一数据被写入时，使写入电流在从第一驱动线到第三驱动线的方向上流动，并且当写入第二数据时，使写入电流流入 从第三驱动线到第二驱动线的方向。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    9.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20080180859A1

    公开(公告)日：2008-07-31

    申请号：US12014522

    申请日：2008-01-15

    申请人： Tomomasa UEDA ,  Hisanori AIKAWA ,  Masatoshi YOSHIKAWA ,  Naoharu SHIMOMURA ,  Masahiko NAKAYAMA ,  Sumio IKEGAWA ,  Keiji HOSOTANI ,  Makoto NAGAMINE

    发明人： Tomomasa UEDA ,  Hisanori AIKAWA ,  Masatoshi YOSHIKAWA ,  Naoharu SHIMOMURA ,  Masahiko NAKAYAMA ,  Sumio IKEGAWA ,  Keiji HOSOTANI ,  Makoto NAGAMINE

    IPC分类号： G11B5/33

    CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

    摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。