利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.015 秒)

    SRAM device including oxide semiconductor
    3.
    发明授权
    SRAM device including oxide semiconductor 有权

    公开(公告)号：US11895817B2

    公开(公告)日：2024-02-06

    申请号：US17529817

    申请日：2021-11-18

    申请人： Electronics and Telecommunications Research Institute

    发明人： Sung Haeng Cho ,  Byung-Do Yang ,  Sooji Nam ,  Jaehyun Moon ,  Jae-Eun Pi ,  Jae-Min Kim

    IPC分类号： H10B10/00 ,  G11C11/417 ,  G11C11/412

    CPC分类号： H10B10/12 ,  G11C11/412 ,  G11C11/417

    摘要： Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.