公开(公告)号：US20150315027A1

公开(公告)日：2015-11-05

申请号：US14722628

申请日：2015-05-27

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Daniel James TWITCHEN ,  Sarah Louise GEOGHEGAN ,  Neil PERKINS

IPC: C01B31/06 ,  A44C17/00 ,  A44C17/02 ,  C23C16/27

CPC classification number: C01B32/28 ,  A44C17/00 ,  A44C17/008 ,  A44C17/02 ,  C23C16/27 ,  C23C16/277 ,  C23C16/278 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  C30B31/20

Abstract: The present disclosure relates to a method of making fancy orange synthetic CVD diamond material. Among other things, the method may involve (i) providing a single crystal diamond material that has been grown by CVD and has a [Ns0] concentration less than 5 ppm; (ii) irradiating the provided CVD diamond material so as to introduce isolated vacancies V into at least part of the provided CVD diamond material such that the total concentration of isolated vacancies [VT] in the irradiated diamond material is at least the greater of (a) 0.5 ppm and (b) 50% higher than the [Ns0] concentration in ppm in the provided diamond material; and (iii) annealing the irradiated diamond material to forming vacancy chains from at least some of the introduced isolated vacancies.

Abstract translation: 本公开涉及制造花式橙色合成CVD金刚石材料的方法。 除其他之外，该方法可以包括（i）提供通过CVD生长并且[Ns0]浓度小于5ppm的单晶金刚石材料; （ii）照射所提供的CVD金刚石材料，以便将分离的空位V引入所提供的CVD金刚石材料的至少一部分中，使得被照射的金刚石材料中的隔离空位[VT]的总浓度至少为（a ）0.5ppm和（b）比所提供的金刚石材料中的[Ns0]浓度（ppm）高50％; 和（iii）将所照射的金刚石材料退火以形成至少一些引入的隔离空位的空位链。

公开(公告)号：US20170330816A1

公开(公告)日：2017-11-16

申请号：US15531900

申请日：2015-11-23

Applicant: Element Six Technologies Limited

Inventor： Julian ANAYA CALVO ,  Martin Hermann Hans KUBALL ,  Julian James Sargood ELLIS ,  Daniel James TWITCHEN

IPC: H01L23/373 ,  C09K5/14 ,  H01L23/498

CPC classification number: H01L23/3732 ,  C04B37/006 ,  C04B2235/722 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2237/12 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/363 ,  C04B2237/708 ,  C04B2237/72 ,  C09K5/14 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/49811 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm2 and/or a linear power density of at least 1 W/mm.

公开(公告)号：US20240417884A1

公开(公告)日：2024-12-19

申请号：US18701674

申请日：2022-10-19

Applicant: Element Six Technologies Limited

Inventor： Benjamin Simon TRUSCOTT ,  Stephanie LIGGINS ,  Daniel James TWITCHEN ,  Douglas John GEEKIE ,  William Joseph HILLMAN

IPC: C30B29/04 ,  C30B25/16 ,  C30B25/20 ,  C30B33/02

Abstract: A CVD single crystal diamond having a smallest linear dimension of no less than 3.5 mm, a concentration of single substitutional nitrogen atoms in their neutral charge state (Ns0), as measured by EPR, of between 20 and 250 ppb, a hue angle, hab, between 75 and 135°.

公开(公告)号：US20170242158A1

公开(公告)日：2017-08-24

申请号：US15316799

申请日：2015-06-10

Applicant: Element Six Technologies Limited

Inventor： Alexander MUHR ,  Yevgeny Vasilievich YeANOIKIN ,  Daniel James TWITCHEN

IPC: G02B1/118 ,  G02B5/30 ,  G02B1/02

CPC classification number: G02B1/118 ,  G02B1/02 ,  G02B5/3083

Abstract: An optical element comprising: synthetic diamond material; and an optical surface pattern formed directly in at least one surface of the synthetic diamond material, wherein the optical surface pattern comprises a plurality of projections separated by trenches, the projections spaced apart with a periodicity d, wherein the periodicity d is between 65 and 99% of a zeroeth order diffraction limit above which non zeroeth diffraction orders are observed at an operating wavelength λ, wherein the optical surface pattern has a fill fraction in a range 0.1 to 0.6, the fill fraction defined as [area of projection in one periodic unit]/[area of the periodic unit], and wherein the optical element has an absorption coefficient measured at room temperature of ≦0.2 cm−1 at a wavelength of 10.6 μm.