公开(公告)号：US20080138966A1

公开(公告)日：2008-06-12

申请号：US11940056

申请日：2007-11-14

申请人： Elena V. Rogojina ,  Francesco Lemmi ,  Maxim Kelman ,  Xuegeng Li ,  Pingrong Yu

发明人： Elena V. Rogojina ,  Francesco Lemmi ,  Maxim Kelman ,  Xuegeng Li ,  Pingrong Yu

IPC分类号： H01L21/208

CPC分类号： H01L31/1804 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02664 ,  H01L31/06 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of fabricating a densified nanoparticle thin film with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 5 minutes and about 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature between about 300° C. and about 900° C., and for a second time period of between about 5 minutes and about 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between about 0.1 Torr and about 50 Torr, wherein the precursor gas substantially fills the set of pores, and wherein the densified nanoparticle film with the set of occluded pores is formed.

摘要翻译： 公开了一种在腔室中制造具有一组闭塞孔的致密纳米颗粒薄膜的方法。 该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约5分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成一组细孔。 该方法还包括将多孔压块加热至约300℃至约900℃之间的第二温度和约5分钟至约15分钟的第二时间段，并将前体气体流入室中 在约0.1托和约50托之间的分压，其中前体气体基本上填充该组孔，并且其中形成具有该组闭塞孔的致密纳米颗粒膜。

公开(公告)号：US07776724B2

公开(公告)日：2010-08-17

申请号：US11950030

申请日：2007-12-04

申请人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

发明人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

IPC分类号： H01L21/208 ,  C30B25/04

CPC分类号： H01L21/02601 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667 ,  Y10S977/892 ,  Y10S977/893

摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.

摘要翻译： 公开了一种形成致密化纳米颗粒薄膜的方法。 该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑型; 以及将所述基板定位在第二室中，所述第二室具有介于约1×10 -7乇至约1×10 -4乇之间的压力。 该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

公开(公告)号：US20080182390A1

公开(公告)日：2008-07-31

申请号：US11950030

申请日：2007-12-04

申请人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

发明人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

IPC分类号： H01L21/208

CPC分类号： H01L21/02601 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667 ,  Y10S977/892 ,  Y10S977/893

摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.

摘要翻译： 公开了一种形成致密化纳米颗粒薄膜的方法。 该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑型; 以及将所述衬底定位在第二腔室中，所述第二腔室具有在约1×10 -7 Torr至约1×10 -4 Torr之间的压力。 该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

公开(公告)号：US20080146005A1

公开(公告)日：2008-06-19

申请号：US11950024

申请日：2007-12-04

申请人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

发明人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

IPC分类号： H01L21/36

CPC分类号： H01L21/02601 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667 ,  Y10S977/892 ,  Y10S977/893

摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。 该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

公开(公告)号：US07521340B2

公开(公告)日：2009-04-21

申请号：US11950024

申请日：2007-12-04

申请人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

发明人： Francesco Lemmi ,  Elena V. Rogojina ,  Pingrong Yu ,  David Jurbergs ,  Homer Antoniadis ,  Maxim Kelman

IPC分类号： H01L21/20

CPC分类号： H01L21/02601 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667 ,  Y10S977/892 ,  Y10S977/893

摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。 该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

公开(公告)号：US20080063855A1

公开(公告)日：2008-03-13

申请号：US11851004

申请日：2007-09-06

申请人： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

发明人： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

IPC分类号： B32B3/26 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  Y10T428/249954 ,  Y10T428/31678

摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.

摘要翻译： 描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。 这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

公开(公告)号：US20110091731A1

公开(公告)日：2011-04-21

申请号：US12967378

申请日：2010-12-14

申请人： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

发明人： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

IPC分类号： B32B15/04 ,  H01B1/04 ,  H01B1/02 ,  B32B17/06 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  Y10T428/249954 ,  Y10T428/31678

摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.

摘要翻译： 描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。 这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

公开(公告)号：US20080078441A1

公开(公告)日：2008-04-03

申请号：US11857854

申请日：2007-09-19

申请人： Dmitry Poplavskyy ,  Homer Antoniadis ,  David Jurbergs ,  Maxim Kelman ,  Francesco Lemmi ,  Pingrong Yu

发明人： Dmitry Poplavskyy ,  Homer Antoniadis ,  David Jurbergs ,  Maxim Kelman ,  Francesco Lemmi ,  Pingrong Yu

IPC分类号： H01L31/00 ,  H01L21/02

CPC分类号： H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。 该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。 该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。 其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

公开(公告)号：US07718707B2

公开(公告)日：2010-05-18

申请号：US11842466

申请日：2007-08-21

申请人： Maxim Kelman ,  Xuegeng Li ,  Pingrong Yu ,  Karel Vanheusden ,  David Jurbergs

发明人： Maxim Kelman ,  Xuegeng Li ,  Pingrong Yu ,  Karel Vanheusden ,  David Jurbergs

IPC分类号： B05D7/00 ,  B22F3/00 ,  B01F3/04 ,  C09K3/30

CPC分类号： C01B33/021 ,  B22F1/0022 ,  B22F9/12 ,  B22F2999/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  Y10T428/12014 ,  B22F2202/13

摘要： A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.

摘要翻译： 公开了一组纳米颗粒。 该组纳米颗粒的每个纳米颗粒由一组以基本上球形构型排列的IV族原子组成。 该组纳米颗粒的每个纳米颗粒进一步具有约1.0至约2.0的球形度; 约4nm至约100nm的直径; 并且烧结温度小于该组IV族原子的熔融温度。

公开(公告)号：US20080152938A1

公开(公告)日：2008-06-26

申请号：US11842466

申请日：2007-08-21

申请人： Maxim Kelman ,  Xuegeng Li ,  Pingrong Yu ,  Karel Vanheusden ,  David Jurbergs

发明人： Maxim Kelman ,  Xuegeng Li ,  Pingrong Yu ,  Karel Vanheusden ,  David Jurbergs

IPC分类号： B32B15/02

CPC分类号： C01B33/021 ,  B22F1/0022 ,  B22F9/12 ,  B22F2999/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  Y10T428/12014 ,  B22F2202/13

摘要： A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.

摘要翻译： 公开了一组纳米颗粒。 该组纳米颗粒的每个纳米颗粒由一组以基本上球形构型排列的IV族原子组成。 该组纳米颗粒的每个纳米颗粒进一步具有约1.0至约2.0的球形度; 约4nm至约100nm的直径; 并且烧结温度小于该组IV族原子的熔融温度。