Charged-particle exposure apparatus
    1.
    发明授权
    Charged-particle exposure apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US07737422B2

    公开(公告)日:2010-06-15

    申请号:US11816353

    申请日:2006-02-16

    IPC分类号: G21G5/00

    摘要: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    摘要翻译: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

    Charged-Particle Exposure Apparatus
    2.
    发明申请
    Charged-Particle Exposure Apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US20080258084A1

    公开(公告)日:2008-10-23

    申请号:US11816353

    申请日:2006-02-16

    IPC分类号: G21K5/00

    摘要: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

    摘要翻译: 一种用于照射目标的粒子束投影处理装置,具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统,用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

    Advanced pattern definition for particle-beam processing
    3.
    发明申请
    Advanced pattern definition for particle-beam processing 有权
    粒子束加工的高级图案定义

    公开(公告)号:US20050242302A1

    公开(公告)日:2005-11-03

    申请号:US11119025

    申请日:2005-04-29

    摘要: In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

    摘要翻译: 在用于粒子束处理装置的图案定义装置中,多个孔(21)布置在图案定义区(pf)内,其中,图案定义区(pf)中的孔(21)的位置与 垂直于或平行于扫描方向的方向(X,Y)不仅通过沿着所述方向所取的孔的有效宽度(w)的多个整数而彼此偏移,而且也是整数的多个整数 所述有效宽度的分数。 图案定义字段(pf)可以被分割成由许多交错的线(pl)组成的几个域(D); 沿着与扫描方向垂直的方向,域的孔径相互偏移有效宽度(w)的多个整数,而不同域的孔的偏移量是该宽度的整数分数。

    Global point spreading function in multi-beam patterning
    4.
    发明授权
    Global point spreading function in multi-beam patterning 有权
    多光束图案中的全局点扩散函数

    公开(公告)号:US08278635B2

    公开(公告)日:2012-10-02

    申请号:US12708737

    申请日:2010-02-19

    IPC分类号: H01J3/26

    摘要: In a particle multi-beam structuring apparatus for forming a pattern on a target's surface using a beam of electrically charged particles, during exposure steps the particle beam is produced, directed through a pattern definition means producing a patterned particle beam composed of multiple beamlets, and projected by an optical column including a controllable deflection means onto the target surface to form, at a nominal location on the target, a beam image comprising the image of defining structures in the pattern definition means. The beam image's nominal location relative to the target is changed between exposure steps. The actual location of the beam image is varied within each exposure step around the nominal location, through a set of locations realizing a distribution of locations within the image plane around a mean location coinciding with the nominal location, thus introducing an additional blur which is homogenous over the entire beam image.

    摘要翻译: 在用于使用带电粒子束在目标表面上形成图案的粒子多光束结构装置中,在曝光步骤期间,通过产生由多个子束组成的图案化粒子束的图案定义装置产生粒子束,并且 通过包括可控偏转装置的光学柱被投影到目标表面上,以在目标的标称位置处形成包括图案定义装置中的限定结构的图像的光束图像。 相对于目标的光束图像的标称位置在曝光步骤之间改变。 射束图像的实际位置在标称位置周围的每个曝光步骤内通过一组位置实现,该位置实现在与标称位置重合的平均位置周围的图像平面内的位置的分布,从而引入均匀的附加模糊 在整个光束图像上。

    Compensation of dose inhomogeneity and image distortion
    5.
    发明授权
    Compensation of dose inhomogeneity and image distortion 有权
    剂量不均匀性和图像畸变的补偿

    公开(公告)号:US08258488B2

    公开(公告)日:2012-09-04

    申请号:US12535744

    申请日:2009-08-05

    IPC分类号: A61N5/00

    摘要: An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.

    摘要翻译: 用于在靶上限定图案的装置中的改进的孔布置,用于粒子束曝光装置,通过照射带电粒子束并允许光束仅通过多个孔。 该装置包括孔阵列,该孔阵列具有多个相同形状的孔,限定穿透孔的子束的形状和相对位置。 消隐装置关闭穿过孔并由它们限定的选定子束的通过。 根据通过小偏差偏离规则排列的布置,孔径布置在孔阵列上,调整由粒子束曝光装置引起的变形,并且孔径阵列的孔径的大小沿孔径阵列依次不同 以允许通过孔和相应的开口调节在靶上辐射的电流。

    Advanced pattern definition for particle-beam processing
    6.
    发明授权
    Advanced pattern definition for particle-beam processing 有权
    粒子束加工的高级图案定义

    公开(公告)号:US07276714B2

    公开(公告)日:2007-10-02

    申请号:US11119025

    申请日:2005-04-29

    IPC分类号: G21K6/10

    摘要: In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

    摘要翻译: 在用于粒子束处理装置的图案定义装置中,多个孔(21)布置在图案定义区(pf)内,其中,图案定义区(pf)中的孔(21)的位置与 垂直于或平行于扫描方向的方向(X,Y)不仅通过沿着所述方向所取的孔的有效宽度(w)的多个整数而彼此偏移,而且也是整数的多个整数 所述有效宽度的分数。 图案定义字段(pf)可以被分割成由许多交错的线(pl)组成的几个域(D); 沿着与扫描方向垂直的方向,域的孔径相互偏移有效宽度(w)的多个整数,而不同域的孔的偏移量是该宽度的整数分数。

    Charged-particle exposure apparatus with electrostatic zone plate
    7.
    发明授权
    Charged-particle exposure apparatus with electrostatic zone plate 有权
    带静电带的带电粒子曝光装置

    公开(公告)号:US08304749B2

    公开(公告)日:2012-11-06

    申请号:US11816059

    申请日:2006-02-09

    IPC分类号: G21K5/10 H01J37/08

    摘要: In a particle-beam projection processing apparatus for irradiating a target by a beam of energetic electrically charged particles, including an illumination system, a pattern definition system for positioning an aperture arrangement composed of apertures transparent to the energetic particles in the path of the illuminating beam, and a projection system to project the beam onto a target, there is provided at least one plate electrode device, which has openings corresponding to the apertures of the pattern definition system and including a composite electrode composed of a number of partial electrodes being arranged non-overlapping and adjoining to each other, the total lateral dimensions of the composite electrode covering the aperture arrangement of the pattern definition system. The partial electrodes can be applied different electrostatic potentials.

    摘要翻译: 在用于通过包括照明系统的能量带电粒子束照射目标的粒子束投影处理装置中,用于定位由照明光束的路径中的能量粒子透明的孔组成的孔布置的图案定义系统 以及用于将光束投射到靶上的投影系统,设置有至少一个平板电极装置,其具有对应于图案定义系统的孔的开口,并且包括由多个部分电极组成的复合电极, 重叠并相邻,覆盖图案定义系统的孔布置的复合电极的总侧向尺寸。 部分电极可以施加不同的静电电位。

    Global Point Spreading Function in Multi-Beam Patterning
    8.
    发明申请
    Global Point Spreading Function in Multi-Beam Patterning 有权
    多光束图案中的全局点扩散函数

    公开(公告)号:US20100224790A1

    公开(公告)日:2010-09-09

    申请号:US12708737

    申请日:2010-02-19

    IPC分类号: H01J3/26

    摘要: In a particle multi-beam structuring apparatus for forming a pattern on a target's surface using a beam of electrically charged particles, during exposure steps the particle beam is produced, directed through a pattern definition means producing a patterned particle beam composed of multiple beamlets, and projected by an optical column including a controllable deflection means onto the target surface to form, at a nominal location on the target, a beam image comprising the image of defining structures in the pattern definition means. The beam image's nominal location relative to the target is changed between exposure steps. The actual location of the beam image is varied within each exposure step around the nominal location, through a set of locations realizing a distribution of locations within the image plane around a mean location coinciding with the nominal location, thus introducing an additional blur which is homogenous over the entire beam image.

    摘要翻译: 在用于使用带电粒子束在目标表面上形成图案的粒子多光束结构装置中,在曝光步骤期间,通过产生由多个子束组成的图案化粒子束的图案定义装置产生粒子束,并且 通过包括可控偏转装置的光学柱被投影到目标表面上,以在目标的标称位置处形成包括图案定义装置中的限定结构的图像的光束图像。 相对于目标的光束图像的标称位置在曝光步骤之间改变。 射束图像的实际位置在标称位置周围的每个曝光步骤内通过一组位置实现,该位置实现在与标称位置重合的平均位置周围的图像平面内的位置的分布,从而引入均匀的附加模糊 在整个光束图像上。

    COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION
    9.
    发明申请
    COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION 有权
    剂量不均匀性和图像失真的补偿

    公开(公告)号:US20100038554A1

    公开(公告)日:2010-02-18

    申请号:US12535744

    申请日:2009-08-05

    IPC分类号: G21K1/00 H01J3/26

    摘要: An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.

    摘要翻译: 用于在靶上限定图案的装置中的改进的孔布置,用于粒子束曝光装置,通过照射带电粒子束并允许光束仅通过多个孔。 该装置包括孔阵列,该孔阵列具有多个相同形状的孔,限定穿透孔的子束的形状和相对位置。 消隐装置关闭穿过孔并由它们限定的选定子束的通过。 根据通过小偏差偏离规则排列的布置,孔径布置在孔阵列上,调整由粒子束曝光装置引起的变形,并且孔径阵列的孔径的大小沿孔径阵列依次不同 以允许通过孔和相应的开口调节在靶上辐射的电流。