Semiconductor substrate and method for manufacturing semiconductor device
    3.
    发明申请
    Semiconductor substrate and method for manufacturing semiconductor device 失效
    半导体基板及半导体装置的制造方法

    公开(公告)号:US20090102071A1

    公开(公告)日:2009-04-23

    申请号:US12285831

    申请日:2008-10-15

    申请人: Osamu Kindo

    发明人: Osamu Kindo

    IPC分类号: H01L23/544 H01L21/302

    摘要: The present invention includes a first recognition mark which is arranged in a frame part of a perimeter of an implementation region having a plurality of semiconductor chips implemented therein so that the position of the semiconductor substrate can be macroscopically detected by using a recognition camera, and a second recognition mark which is formed into a smaller shape than the first recognition mark so that the position of the dividing line can be microscopically detected by using a recognition camera. The second recognition mark is arranged so that its center line is positioned on a line that extends from a dicing line, and has a pattern shape which is formed so as to be linearly symmetric with respect to the center line. This pattern shape is formed so that the ratio of a length occupying a direction parallel to the dicing line is larger than that occupying a direction perpendicular to the dicing line, and includes a flow region for promoting the flow of an etchant for forming the pattern shape.

    摘要翻译: 本发明包括第一识别标记,该第一识别标记被布置在具有实现的多个半导体芯片的实施区域的周边的框架部分中,使得可以通过使用识别照相机宏观地检测半导体衬底的位置,并且 第二识别标记形成为比第一识别标记更小的形状,使得可以通过使用识别照相机来显微检测分割线的位置。 第二识别标记被布置成使得其中心线位于从切割线延伸的线上,并且具有形成为相对于中心线线性对称的图案形状。 这种图案形状形成为使得占据与切割线平行的方向的长度的比例大于垂直于切割线的方向的比例,并且包括用于促进用于形成图案形状的蚀刻剂的流动的流动区域 。