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    RAISED SILICIDE CONTACT
    1.
    发明申请
    RAISED SILICIDE CONTACT 有权
    提高硅胶接触

    公开(公告)号：US20130334693A1

    公开(公告)日：2013-12-19

    申请号：US13525401

    申请日：2012-06-18

    申请人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

    发明人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

    IPC分类号： H01L23/532 ,  H01L21/768

    CPC分类号： H01L21/28518 ,  H01L21/02063 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/823814 ,  H01L23/485 ,  H01L29/665 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a raised silicide contact, the method including depositing a layer of silicon using a gas cluster implant technique which accelerates clusters of silicon atoms causing them to penetrate a surface oxide on a top surface of the silicide; heating the silicide including the silicon layer to a temperature from about 300° C. to about 950° and holding the temperature for about 0.1 miliseconds to about 600 seconds in an inert atmosphere causing silicon from the layer of silicon to react with the remaining silicide partially formed in the silicon containing substrate; and forming a raised silicide from the layer of silicon, wherein the thickness of the raised silicide is greater than the thickness of the silicide and the raised silicide protrudes above a top surface of the silicon containing substrate.

    摘要翻译： 一种用于形成硅化物接触的方法，所述方法包括使用气体簇注入技术沉积硅层，所述气体簇注入技术加速硅原子簇，使得它们穿过硅化物的顶表面上的表面氧化物; 将包括硅层的硅化物加热到约300℃至约950℃的温度，并在惰性气氛中保持约0.1毫秒至约600秒的温度，从而使来自硅层的硅部分地与剩余的硅化物部分地反应 形成在含硅衬底中; 以及从所述硅层形成凸起的硅化物，其中所述凸起的硅化物的厚度大于所述硅化物的厚度，并且所述硅化物在所述含硅衬底的顶表面上方突出。

    Raised silicide contact
    2.
    发明授权
    Raised silicide contact 有权
    引起硅化物接触

    公开(公告)号：US08927422B2

    公开(公告)日：2015-01-06

    申请号：US13525401

    申请日：2012-06-18

    申请人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

    发明人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

    IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238

    CPC分类号： H01L21/28518 ,  H01L21/02063 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/823814 ,  H01L23/485 ,  H01L29/665 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a raised silicide contact including depositing a layer of silicon at a bottom of a contract trench using a gas cluster implant technique which accelerates clusters of silicon atoms causing them to penetrate a surface oxide on a top surface of the silicide, a width of the silicide and the contact trench are substantially equal; heating the silicide including the silicon layer to a temperature from about 300° C. to about 950° C. in an inert atmosphere causing silicon from the layer of silicon to react with the remaining silicide partially formed in the silicon containing substrate; and forming a raised silicide from the layer of silicon, wherein the thickness of the raised silicide is greater than the thickness of the silicide and the raised silicide protrudes above a top surface of the silicon containing substrate.

    摘要翻译： 一种用于形成高硅化物接触的方法，包括使用气体簇注入技术在合同沟槽的底部沉积硅层，所述气体簇注入技术加速硅原子簇，导致它们穿过硅化物顶表面上的表面氧化物，宽度 的硅化物和接触沟槽基本相等; 将包含硅层的硅化物在惰性气氛中加热至约300℃至约950℃的温度，使来自硅层的硅与部分形成在含硅衬底中的剩余硅化物反应; 以及从所述硅层形成凸起的硅化物，其中所述凸起的硅化物的厚度大于所述硅化物的厚度，并且所述硅化物在所述含硅衬底的顶表面上方突出。

    Techniques to form uniform and stable silicide
    5.
    发明授权
    Techniques to form uniform and stable silicide 有权
    形成均匀稳定的硅化物的技术

    公开(公告)号：US08981565B2

    公开(公告)日：2015-03-17

    申请号：US13428184

    申请日：2012-03-23

    申请人： Christian Lavoie ,  Dong-Ick Lee ,  Ahmet Serkan Ozcan ,  Zhen Zhang

    发明人： Christian Lavoie ,  Dong-Ick Lee ,  Ahmet Serkan Ozcan ,  Zhen Zhang

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/285 ,  H01L29/66

    CPC分类号： H01L29/665 ,  H01L21/02381 ,  H01L21/02631 ,  H01L21/244 ,  H01L21/28518 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/161

    摘要： In one aspect, a method of fabricating a metal silicide includes the following steps. A semiconductor material selected from the group consisting of silicon and silicon germanium is provided. A metal(s) is deposited on the semiconductor material. A first anneal is performed at a temperature and for a duration sufficient to react the metal(s) with the semiconductor material to form an amorphous layer including an alloy formed from the metal(s) and the semiconductor material, wherein the temperature at which the first anneal is performed is below a temperature at which a crystalline phase of the alloy is formed. An etch is used to selectively remove unreacted portions of the metal(s). A second anneal is performed at a temperature and for a duration sufficient to crystallize the alloy thus forming the metal silicide. A device contact and a method of fabricating a FET device are also provided.

    摘要翻译： 一方面，制造金属硅化物的方法包括以下步骤。 提供从由硅和硅锗组成的组中选择的半导体材料。 一种或多种金属沉积在半导体材料上。 在足以使金属与半导体材料反应的温度和持续时间进行第一退火以形成包括由金属和半导体材料形成的合金的非晶层，其中， 进行第一退火低于形成合金的结晶相的温度。 使用蚀刻来选择性地去除金属的未反应部分。 在足以使合金结晶形成金属硅化物的温度和持续时间内进行第二次退火。 还提供了器件触点和制造FET器件的方法。