公开(公告)号：US20130334693A1

公开(公告)日：2013-12-19

申请号：US13525401

申请日：2012-06-18

申请人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

发明人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/28518 ,  H01L21/02063 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/823814 ,  H01L23/485 ,  H01L29/665 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a raised silicide contact, the method including depositing a layer of silicon using a gas cluster implant technique which accelerates clusters of silicon atoms causing them to penetrate a surface oxide on a top surface of the silicide; heating the silicide including the silicon layer to a temperature from about 300° C. to about 950° and holding the temperature for about 0.1 miliseconds to about 600 seconds in an inert atmosphere causing silicon from the layer of silicon to react with the remaining silicide partially formed in the silicon containing substrate; and forming a raised silicide from the layer of silicon, wherein the thickness of the raised silicide is greater than the thickness of the silicide and the raised silicide protrudes above a top surface of the silicon containing substrate.

摘要翻译： 一种用于形成硅化物接触的方法，所述方法包括使用气体簇注入技术沉积硅层，所述气体簇注入技术加速硅原子簇，使得它们穿过硅化物的顶表面上的表面氧化物; 将包括硅层的硅化物加热到约300℃至约950℃的温度，并在惰性气氛中保持约0.1毫秒至约600秒的温度，从而使来自硅层的硅部分地与剩余的硅化物部分地反应 形成在含硅衬底中; 以及从所述硅层形成凸起的硅化物，其中所述凸起的硅化物的厚度大于所述硅化物的厚度，并且所述硅化物在所述含硅衬底的顶表面上方突出。

公开(公告)号：US08927422B2

公开(公告)日：2015-01-06

申请号：US13525401

申请日：2012-06-18

申请人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

发明人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238

CPC分类号： H01L21/28518 ,  H01L21/02063 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/823814 ,  H01L23/485 ,  H01L29/665 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a raised silicide contact including depositing a layer of silicon at a bottom of a contract trench using a gas cluster implant technique which accelerates clusters of silicon atoms causing them to penetrate a surface oxide on a top surface of the silicide, a width of the silicide and the contact trench are substantially equal; heating the silicide including the silicon layer to a temperature from about 300° C. to about 950° C. in an inert atmosphere causing silicon from the layer of silicon to react with the remaining silicide partially formed in the silicon containing substrate; and forming a raised silicide from the layer of silicon, wherein the thickness of the raised silicide is greater than the thickness of the silicide and the raised silicide protrudes above a top surface of the silicon containing substrate.

摘要翻译： 一种用于形成高硅化物接触的方法，包括使用气体簇注入技术在合同沟槽的底部沉积硅层，所述气体簇注入技术加速硅原子簇，导致它们穿过硅化物顶表面上的表面氧化物，宽度 的硅化物和接触沟槽基本相等; 将包含硅层的硅化物在惰性气氛中加热至约300℃至约950℃的温度，使来自硅层的硅与部分形成在含硅衬底中的剩余硅化物反应; 以及从所述硅层形成凸起的硅化物，其中所述凸起的硅化物的厚度大于所述硅化物的厚度，并且所述硅化物在所述含硅衬底的顶表面上方突出。

公开(公告)号：US20130200467A1

公开(公告)日：2013-08-08

申请号：US13367419

申请日：2012-02-07

申请人： Lisa F. Edge ,  Nathaniel Berliner ,  James John Demarest ,  Balasubramanian S. Haran

发明人： Lisa F. Edge ,  Nathaniel Berliner ,  James John Demarest ,  Balasubramanian S. Haran

IPC分类号： H01L27/088 ,  H01L21/28

CPC分类号： H01L29/49 ,  H01L21/28088 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L29/66545

摘要： A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is used to allow formation of two adjacent transistors with different fill metals and different workfunction metals, enabling different threshold voltages in the adjacent transistors.

摘要翻译： 公开了用于形成双金属填充物的结构和方法以及用于替换栅极金属器件的双阈值电压。 使用涉及钛和铝的选择性沉积方法来形成具有不同填充金属和不同功函数金属的两个相邻晶体管，从而能够在相邻晶体管中实现不同的阈值电压。

公开(公告)号：US08796128B2

公开(公告)日：2014-08-05

申请号：US13367419

申请日：2012-02-07

申请人： Lisa F. Edge ,  Nathaniel Berliner ,  James John Demarest ,  Balasubramanian S. Haran ,  Raymond J. Donohue

发明人： Lisa F. Edge ,  Nathaniel Berliner ,  James John Demarest ,  Balasubramanian S. Haran ,  Raymond J. Donohue

IPC分类号： H01L21/28 ,  H01L27/088

CPC分类号： H01L29/49 ,  H01L21/28088 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L29/66545

摘要： A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is used to allow formation of two adjacent transistors with different fill metals and different workfunction metals, enabling different threshold voltages in the adjacent transistors.

摘要翻译： 公开了用于形成双金属填充物的结构和方法以及用于替换栅极金属器件的双阈值电压。 使用涉及钛和铝的选择性沉积方法来形成具有不同填充金属和不同功函数金属的两个相邻晶体管，从而能够在相邻晶体管中实现不同的阈值电压。

公开(公告)号：US20110198756A1

公开(公告)日：2011-08-18

申请号：US12067285

申请日：2006-08-25

申请人： ü Thenappan ,  Chien-Wei Li ,  David Nalewajek ,  Martin Cheney ,  Jingyu Lao ,  Eric Eisenbraun ,  Min Li ,  Nathaniel Berliner ,  Mikko Ritala ,  Markku Leskela ,  kaupo Kukli ,  Linda Cheney

发明人： ü Thenappan ,  Chien-Wei Li ,  David Nalewajek ,  Martin Cheney ,  Jingyu Lao ,  Eric Eisenbraun ,  Min Li ,  Nathaniel Berliner ,  Mikko Ritala ,  Markku Leskela ,  kaupo Kukli ,  Linda Cheney

IPC分类号： H01L21/3205 ,  H01L29/43 ,  H01L23/48

CPC分类号： C07F17/02 ,  C23C16/18

摘要： Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC′, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C′ comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C′ further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.

摘要翻译： 已经提供了可以在非常高的生长速率，低电阻率和低水平的碳，氧和氮杂质的基底上沉积保形薄钌薄膜的气相沉积前体。 本文所述的前体包括具有式CMC'的化合物，其中M包含金属或准金属; C包括取代或未取代的无环烯烃，环烯烃或环烯烃环结构; 和C'包括取代或未取代的无环烯烃，环烯烃或环烯烃环结构; 其中C和C'中的至少一个进一步和单独地被式CH（X）R 1表示的配体取代，其中X是N，P或S-取代的官能团或羟基，并且R 1是氢或 烃。 还描述了气相沉积前体和所得膜的生产方法，以及气相沉积前体和所得膜的用途和最终用途。