公开(公告)号：US10557107B2

公开(公告)日：2020-02-11

申请号：US15971535

申请日：2018-05-04

Applicant: Entegris, Inc.

Inventor： Laisheng Sun ,  Peng Zhang ,  Jun Liu ,  Steven Medd ,  Jeffrey A. Barnes ,  Shrane Ning Jenq

IPC: C11D7/32 ,  C11D11/00 ,  C11D1/62 ,  C23G1/20 ,  H01L21/02 ,  C11D3/00 ,  C11D3/30

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US20180251712A1

公开(公告)日：2018-09-06

申请号：US15971535

申请日：2018-05-04

Applicant: Entegris, Inc.

Inventor： Laisheng Sun ,  Peng Zhang ,  Jun Liu ,  Steven Medd ,  Jeffrey A. Bames ,  Shrane Ning Jenq

IPC: C11D11/00 ,  H01L21/02 ,  C11D3/30 ,  C11D1/62 ,  C23G1/20 ,  C11D7/32 ,  C11D3/00

CPC classification number: C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C23G1/20 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.