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公开(公告)号：US20180240680A1
公开(公告)日：2018-08-23
申请号：US15892775
申请日：2018-02-09
申请人： Entegris, Inc.
IPC分类号： H01L21/311 , H01L21/027 , G03F7/42 , H01L21/02
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/02057 , H01L21/0273
摘要： A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.
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公开(公告)号：US10557107B2
公开(公告)日：2020-02-11
申请号：US15971535
申请日：2018-05-04
申请人： Entegris, Inc.
发明人： Laisheng Sun , Peng Zhang , Jun Liu , Steven Medd , Jeffrey A. Barnes , Shrane Ning Jenq
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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公开(公告)号：US10340150B2
公开(公告)日：2019-07-02
申请号：US15103593
申请日：2014-12-16
发明人： Steven Bilodeau , Jeffrey A. Barnes , Emanuel Cooper , Hsing-Chen Wu , Sheng-Hung Tu , Thomas Parson , Min-chieh Yang
IPC分类号： H01L21/3213 , C09K13/00 , H01L21/3205 , H01L29/16 , H01L29/26 , H01L29/45 , C09G1/04 , H01L21/24
摘要： Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
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公开(公告)号：US10176979B2
公开(公告)日：2019-01-08
申请号：US14378842
申请日：2013-02-15
申请人： ENTEGRIS, INC.
发明人： Jun Liu , Jeffrey A. Barnes , Emanuel I. Cooper , Laisheng Sun , Elizabeth Thomas , Jason Chang
IPC分类号： H01L21/02 , C11D1/72 , C11D3/20 , C11D1/66 , C11D1/22 , C11D1/38 , B08B3/08 , C11D11/00 , C11D3/39 , C11D7/06 , C11D3/04 , C11D3/34
摘要： An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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公开(公告)号：US10392560B2
公开(公告)日：2019-08-27
申请号：US15407850
申请日：2017-01-17
申请人： ENTEGRIS, INC.
发明人： Jeffrey A. Barnes , Emanuel I. Cooper , Li-Min Chen , Steven Lippy , Rekha Rajaram , Sheng-Hung Tu
IPC分类号： C09K13/10 , H01L21/3213 , C09K13/00 , C09K13/06 , C09K13/08 , C23F1/02 , C23F1/30 , C23F1/40 , H01L21/02 , C11D11/00 , C11D7/02 , C11D7/08 , C11D7/32 , H01L21/311
摘要： Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
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公开(公告)号：US10347504B2
公开(公告)日：2019-07-09
申请号：US15892775
申请日：2018-02-09
申请人： Entegris, Inc.
IPC分类号： H01L21/311 , G03F7/42 , H01L21/02 , H01L21/027
摘要： A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.
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