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1.发明申请POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE 审中-公开具有改进的障碍层相容性和清洁性能的后CMP制剂公开(公告)号：US20150045277A1
公开(公告)日：2015-02-12
申请号：US14385946
申请日：2013-03-14
申请人： Entegris, Inc.
发明人： Jun Liu , Trace Quentin Hurd , Laisheng Sun , Steven Medd , Shrane Ning Jenq
CPC分类号： C11D7/3209 , C11D3/0042 , C11D3/0073 , C11D7/265 , C11D7/268 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/7684 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.
摘要翻译： 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种唑类腐蚀抑制剂，至少一种还原剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洁后CMP残留物和污染物质，同时与阻挡层相容，其中阻挡层基本上不含钽或钛。
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公开(公告)号：US20180251712A1
公开(公告)日：2018-09-06
申请号：US15971535
申请日：2018-05-04
申请人： Entegris, Inc.
发明人： Laisheng Sun , Peng Zhang , Jun Liu , Steven Medd , Jeffrey A. Bames , Shrane Ning Jenq
CPC分类号： C11D11/0047 , C11D1/62 , C11D3/0073 , C11D3/30 , C11D7/32 , C11D7/3209 , C23G1/20 , H01L21/02063 , H01L21/02065 , H01L21/02074
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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公开(公告)号：US10557107B2
公开(公告)日：2020-02-11
申请号：US15971535
申请日：2018-05-04
申请人： Entegris, Inc.
发明人： Laisheng Sun , Peng Zhang , Jun Liu , Steven Medd , Jeffrey A. Barnes , Shrane Ning Jenq
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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公开(公告)号：US10176979B2
公开(公告)日：2019-01-08
申请号：US14378842
申请日：2013-02-15
申请人： ENTEGRIS, INC.
发明人： Jun Liu , Jeffrey A. Barnes , Emanuel I. Cooper , Laisheng Sun , Elizabeth Thomas , Jason Chang
IPC分类号： H01L21/02 , C11D1/72 , C11D3/20 , C11D1/66 , C11D1/22 , C11D1/38 , B08B3/08 , C11D11/00 , C11D3/39 , C11D7/06 , C11D3/04 , C11D3/34
摘要： An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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