摘要:
A method and apparatus for a power amplifier module is described. The module includes a power amplifier and a power supply modulator coupled to the power amplifier. In addition, the module includes an inverter coupled between the power amplifier and the power supply modulator. The inverter provides a predistorted signal to the power amplifier to cancel distortion in the power amplifier provided by the power supply modulator. In addition, the module can include a driver coupled between the power amplifier and the inverter wherein the driver supplies the predistorted signal to the power amplifier.
摘要:
A method and apparatus for a power amplifier module is described. The module includes a power amplifier and a power supply modulator coupled to the power amplifier. In addition, the module includes an inverter coupled between the power amplifier and the power supply modulator. The inverter provides a predistorted signal to the power amplifier to cancel distortion in the power amplifier provided by the power supply modulator. In addition, the module can include a driver coupled between the power amplifier and the inverter wherein the driver supplies the predistorted signal to the power amplifier.
摘要:
Apparatus and methods are described for biasing amplifiers with multiple outputs. A semiconductor die may include a reference Field Effect Transistor (FET) integrated on the semiconductor die and coupled to an amplifier integrated on the semiconductor die. A voltage offset circuit may also be integrated on the semiconductor die for determining the voltage needed to operate the amplifier.
摘要:
Power amplifier (PA) apparatus that includes: a PA device operating at a fundamental frequency and having a maximum operating frequency that is higher than the fundamental frequency, an output current having a fundamental component at the fundamental frequency and a plurality of harmonic components at different harmonic frequencies of the fundamental frequency, and an output voltage based on the output current; a first matching circuit coupled to the PA device and corresponding to the fundamental component; and a second matching circuit coupled between the PA device and the first matching circuit and corresponding to at least one of the harmonic components, wherein the first and second matching circuits maintain the PA output voltage at a value that is no more than a predetermined maximum value, which is less than a breakdown voltage for the PA device.
摘要:
An embodiment of a device includes a terminal, an active transistor die electrically coupled to the terminal, a detector configured to sense a signal characteristic on the terminal, and control circuitry electrically coupled to the active transistor die and to the detector, wherein the active transistor die, detector, and control circuitry are coupled to a package. The control circuitry may include a control element and a control device. Based on the signal characteristic, the control circuitry controls which of multiple operating states the device operates. A method for controlling the operating state of the device includes sensing, using the detector, a signal characteristic at the terminal, and determining, using the control device, whether the signal characteristic conforms to a pre-set criteria, and when the signal characteristic does not conform to the pre-set criteria, modifying the state of the control element to alter the operating state of the device.
摘要:
An embodiment of a device includes a terminal, an active transistor die electrically coupled to the terminal, a detector configured to sense a signal characteristic on the terminal, and control circuitry electrically coupled to the active transistor die and to the detector, wherein the active transistor die, detector, and control circuitry are coupled to a package. The control circuitry may include a control element and a control device. Based on the signal characteristic, the control circuitry controls which of multiple operating states the device operates. A method for controlling the operating state of the device includes sensing, using the detector, a signal characteristic at the terminal, and determining, using the control device, whether the signal characteristic conforms to a pre-set criteria, and when the signal characteristic does not conform to the pre-set criteria, modifying the state of the control element to alter the operating state of the device.
摘要:
Apparatus and methods are described for biasing amplifiers with multiple outputs. A semiconductor die may include a reference Field Effect Transistor (FET) integrated on the semiconductor die and coupled to an amplifier integrated on the semiconductor die. A voltage offset circuit may also be integrated on the semiconductor die for determining the voltage needed to operate the amplifier.
摘要:
An amplifier that amplifies an input signal and provides the amplified signal to a load at a summing junction that has a first impedance value. The amplifier includes a splitter network receiving the input signal and providing a phase delayed signal and an undelayed signal; a carrier amplifier path amplifying the phase delayed signal and including a carrier amplifier and a first output match network coupled between the carrier amplifier and the summing node; and a peaking amplifier path amplifying the undelayed signal and including a peaking amplifier, a second output match network coupled to the peaking amplifier, and a phase delay element coupled between the second output match network and the summing node, wherein the phase delay element provides a degree of phase delay and has a designed characteristic impedance value that is larger than the first impedance value for increasing the off-state impedance of the peaking amplifier.
摘要:
Power amplifier (PA) apparatus that includes: a PA device operating at a fundamental frequency and having a maximum operating frequency that is higher than the fundamental frequency, an output current having a fundamental component at the fundamental frequency and a plurality of harmonic components at different harmonic frequencies of the fundamental frequency, and an output voltage based on the output current; a first matching circuit coupled to the PA device and corresponding to the fundamental component; and a second matching circuit coupled between the PA device and the first matching circuit and corresponding to at least one of the harmonic components, wherein the first and second matching circuits maintain the PA output voltage at a value that is no more than a predetermined maximum value, which is less than a breakdown voltage for the PA device.
摘要:
An active bias compensation circuit for use with a radio frequency (“RF”) power amplifier, the RF amplifier having an input (112), an output (116), a first transistor (110), and a plurality of operating performance characteristics responsive to a quiescent operating point established by a bias current in the RF amplifier. The active bias compensation circuit includes: a second transistor (120) operatively coupled to the RF amplifier and having a first, second and third terminal and further configured to have essentially the same electrical and thermal characteristics as the first transistor; and a first circuit (130) coupled between the first and second terminal of the second transistor for causing a desired quiescent operating current to be set and maintained in said RF power amplifier, independent of factors such as temperature and process variation.