公开(公告)号：US20060205157A1

公开(公告)日：2006-09-14

申请号：US11429070

申请日：2006-05-05

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/42348 ,  H01L29/66833 ,  H01L29/7923

摘要： A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

摘要翻译： 提供非易失性存储器。 存储器包括衬底，电介质层，导电层，隔离层，掩埋位线，隧道电介质层，电荷俘获层，势垒介电层和字线。 其中介电层设置在基板上。 导电层设置在电介质层上。 隔离层设置在基板上并且邻近电介质层和导电层。 掩埋位线设置在衬底中并在隔离层下方。 隧道电介质层设置在导电层和隔离层的基板和侧壁上。 电荷捕获层设置在隧道介电层上，势垒介电层设置在电荷俘获层上。 字线设置在基板上，与埋入位线交叉。

公开(公告)号：US07067375B1

公开(公告)日：2006-06-27

申请号：US11018507

申请日：2004-12-20

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/42348 ,  H01L29/66833 ,  H01L29/7923

摘要： A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

公开(公告)号：US07560762B2

公开(公告)日：2009-07-14

申请号：US11209437

申请日：2005-08-23

申请人： Yen-Hao Shih ,  Chia-Hua Ho ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

发明人： Yen-Hao Shih ,  Chia-Hua Ho ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

IPC分类号： H01L29/80

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L27/11521

摘要： A NAND-type flash memory device includes asymmetric floating gates overlying respective wordlines. A given floating gate is sufficiently coupled to its respective wordline such that a large gate (i.e., wordline) bias voltage will couple the floating gate with a voltage which can invert the channel under the floating gate. The inversion channel under the floating gate can thus serve as the source/drain. As a result, the memory device does not need a shallow junction, or an assist-gate. In addition, the memory device exhibits relatively low floating gate-to-floating gate (FG-FG) interference.

摘要翻译： NAND型闪存器件包括覆盖相应字线的非对称浮动栅极。 给定的浮动栅极被充分地耦合到其相应的字线，使得大的栅极（即，字线）偏置电压将使浮动栅极与可以反转浮动栅极下方的沟道的电压耦合。 因此，浮置栅极下的反相通道可以作为源极/漏极。 结果，存储器件不需要浅结或辅助栅。 此外，存储器件具有相对较低的浮置栅极至浮置栅极（FG-FG）干扰。

公开(公告)号：US20060226467A1

公开(公告)日：2006-10-12

申请号：US11100518

申请日：2005-04-07

申请人： Hang-Ting Lue ,  Min-Ta Wu ,  Erh-Kun Lai ,  Yen-Hao Shih ,  Chia-Hua Ho ,  Kuang-Yeu Hsieh

发明人： Hang-Ting Lue ,  Min-Ta Wu ,  Erh-Kun Lai ,  Yen-Hao Shih ,  Chia-Hua Ho ,  Kuang-Yeu Hsieh

IPC分类号： H01L29/788

CPC分类号： H01L27/11568 ,  G11C16/0475 ,  H01L27/115 ,  H01L29/40117 ,  H01L29/4232 ,  H01L29/792

摘要： A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a first inversion region, a second inversion region, and a channel region between the first inversion region and the second inversion region. The semiconductor device further includes a control gate over the channel region and at least one sub-gate over the first and second inversion regions, wherein the control gate does not extend over the at least one sub-gate.

摘要翻译： 半导体器件包括半导体衬底。 半导体衬底包括第一反转区域，第二反转区域和第一反转区域和第二反转区域之间的沟道区域。 所述半导体器件还包括在所述沟道区上的控制栅极以及所述第一和第二反转区域上的至少一个子栅极，其中所述控制栅极不在所述至少一个子栅极上延伸。

公开(公告)号：US20070090442A1

公开(公告)日：2007-04-26

申请号：US11209437

申请日：2005-08-23

申请人： Yen-Hao Shih ,  Chia-Hua Ho ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Hsieh

发明人： Yen-Hao Shih ,  Chia-Hua Ho ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Hsieh

IPC分类号： H01L29/76

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L27/11521

摘要： A NAND-type flash memory device includes asymmetric floating gates overlying respective wordlines. A given floating gate is sufficiently coupled to its respective wordline such that a large gate (i.e., wordline) bias voltage will couple the floating gate with a voltage which can invert the channel under the floating gate. The inversion channel under the floating gate can thus serve as the source/drain. As a result, the memory device does not need a shallow junction, or an assist-gate. In addition, the memory device exhibits relatively low floating gate-to-floating gate (FG-FG) interference.

摘要翻译： NAND型闪存器件包括覆盖相应字线的非对称浮动栅极。 给定的浮动栅极被充分地耦合到其相应的字线，使得大的栅极（即，字线）偏置电压将使浮动栅极与可以反转浮动栅极下方的沟道的电压耦合。 因此，浮置栅极下的反相通道可以作为源极/漏极。 结果，存储器件不需要浅结或辅助栅。 此外，存储器件具有相对较低的浮置栅极至浮置栅极（FG-FG）干扰。

公开(公告)号：US20060134866A1

公开(公告)日：2006-06-22

申请号：US11018507

申请日：2004-12-20

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/42348 ,  H01L29/66833 ,  H01L29/7923

摘要： A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

摘要翻译： 提供非易失性存储器。 存储器包括衬底，电介质层，导电层，隔离层，掩埋位线，隧道电介质层，电荷俘获层，势垒介电层和字线。 其中介电层设置在基板上。 导电层设置在电介质层上。 隔离层设置在基板上并且邻近电介质层和导电层。 掩埋位线设置在衬底中并在隔离层下方。 隧道电介质层设置在导电层和隔离层的基板和侧壁上。 电荷捕获层设置在隧道介电层上，势垒介电层设置在电荷俘获层上。 字线设置在基板上，与埋入位线交叉。

公开(公告)号：US07973366B2

公开(公告)日：2011-07-05

申请号：US11352788

申请日：2006-02-13

申请人： Chia-Hua Ho ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

发明人： Chia-Hua Ho ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

IPC分类号： H01L29/792

CPC分类号： H01L29/7923 ,  G11C16/0475 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/66833

摘要： Memory cells which include a semiconductor substrate having a source region and a drain region separated by a channel region; a charge-trapping structure disposed above the channel region of the semiconductor substrate; a first gate disposed above the charge-trapping structure and proximate to the source region; and a second gate disposed above the charge-trapping structure and proximate to the drain region; where the first gate and the second gate are separated by a first nanospace are provided, along with arrays including a plurality of such cells, methods of manufacturing such cells and methods of operating such cells.

摘要翻译： 存储单元，其包括具有由沟道区域分离的源极区域和漏极区域的半导体衬底; 电荷捕获结构，设置在所述半导体衬底的沟道区之上; 设置在电荷捕获结构上方并靠近源极区的第一栅极; 以及第二栅极，其设置在所述电荷捕获结构的上方并且靠近所述漏极区; 提供了第一栅极和第二栅极被第一纳米级分隔开的区域，以及包括多个这样的电池的阵列，制造这种电池的方法以及操作这种电池的方法。

公开(公告)号：US07511335B2

公开(公告)日：2009-03-31

申请号：US11429070

申请日：2006-05-05

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/42348 ,  H01L29/66833 ,  H01L29/7923

摘要： A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

摘要翻译： 提供非易失性存储器。 存储器包括衬底，电介质层，导电层，隔离层，掩埋位线，隧道电介质层，电荷俘获层，势垒介电层和字线。 其中介电层设置在基板上。 导电层设置在电介质层上。 隔离层设置在基板上并且邻近电介质层和导电层。 掩埋位线设置在衬底中并在隔离层下方。 隧道电介质层设置在导电层和隔离层的基板和侧壁上。 电荷捕获层设置在隧道介电层上，势垒介电层设置在电荷俘获层上。 字线设置在基板上，与埋入位线交叉。

公开(公告)号：US07279385B2

公开(公告)日：2007-10-09

申请号：US11018536

申请日：2004-12-20

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L21/28114 ,  H01L27/11521 ,  H01L29/42376

摘要： A method of manufacturing a flash memory device is provided. Multiple stack structures each comprising a tunneling oxide layer and a first conductive layer are formed over a substrate. Thereafter, multiple embedded doping regions is formed in the substrate between the stack structures. A dielectric layer is formed over the substrate to cover the stack structures and then the dielectric layer is etched back and a portion of dielectric layer is remained on the stack structures. Using a portion of the remaining dielectric layer as a mask, a portion of the first conductive layer is removed. An inter-layer dielectric layer and a second conductive layer are sequentially formed over the first conductive layer. Because a self-aligned process is used to define the floating gate and the floating gate has a narrow-top/wide-bottom configuration, the fabrication process is simplified and the coupling ratio of the stack gate is increased.

摘要翻译： 提供一种制造闪速存储器件的方法。 在衬底上形成各自包括隧穿氧化物层和第一导电层的堆叠结构。 此后，在堆叠结构之间的衬底中形成多个嵌入的掺杂区域。 在衬底上形成电介质层以覆盖堆叠结构，然后电介质层被回蚀刻，并且介电层的一部分保留在堆叠结构上。 使用剩余电介质层的一部分作为掩模，去除第一导电层的一部分。 在第一导电层上依次形成层间电介质层和第二导电层。 由于使用自对准工艺来定义浮动栅极，并且浮栅具有窄顶/宽底部配置，因此简化了制造工艺，并且增加了堆叠栅极的耦合比。

公开(公告)号：US20060131635A1

公开(公告)日：2006-06-22

申请号：US11018536

申请日：2004-12-20

申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Yen-Hao Shih ,  Chia-Hua Ho

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L21/28114 ,  H01L27/11521 ,  H01L29/42376

摘要： A method of manufacturing a flash memory device is provided. Multiple stack structures each comprising a tunneling oxide layer and a first conductive layer are formed over a substrate. Thereafter, multiple embedded doping regions is formed in the substrate between the stack structures. A dielectric layer is formed over the substrate to cover the stack structures and then the dielectric layer is etched back and a portion of dielectric layer is remained on the stack structures. Using a portion of the remaining dielectric layer as a mask, a portion of the first conductive layer is removed. An inter-layer dielectric layer and a second conductive layer are sequentially formed over the first conductive layer. Because a self-aligned process is used to define the floating gate and the floating gate has a narrow-top/wide-bottom configuration, the fabrication process is simplified and the coupling ratio of the stack gate is increased.

摘要翻译： 提供一种制造闪速存储器件的方法。 在衬底上形成各自包括隧穿氧化物层和第一导电层的堆叠结构。 此后，在堆叠结构之间的衬底中形成多个嵌入的掺杂区域。 介电层形成在衬底上以覆盖堆叠结构，然后电介质层被回蚀刻，并且介电层的一部分保留在堆叠结构上。 使用剩余电介质层的一部分作为掩模，去除第一导电层的一部分。 在第一导电层上依次形成层间电介质层和第二导电层。 由于使用自对准工艺来定义浮动栅极，并且浮栅具有窄顶/宽底部配置，因此简化了制造工艺，并且增加了堆叠栅极的耦合比。