公开(公告)号：US20060201911A1

公开(公告)日：2006-09-14

申请号：US11429959

申请日：2006-05-09

申请人： Erik Edelberg ,  Robert Chebi ,  Gladys Lo

发明人： Erik Edelberg ,  Robert Chebi ,  Gladys Lo

IPC分类号： C23F1/00

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

公开(公告)号：US20060228889A1

公开(公告)日：2006-10-12

申请号：US11094689

申请日：2005-03-31

申请人： Erik Edelberg ,  Gladys Lo ,  Jack Kuo

发明人： Erik Edelberg ,  Gladys Lo ,  Jack Kuo

IPC分类号： C23F1/00 ,  H01L21/302

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J2237/3342

摘要： Methods for stripping resist from a semiconductor substrate in a resist stripping chamber are provided. The methods include producing a remote plasma containing reactive species and cooling the reactive species inside the chamber prior to removing the resist with the reactive species. The reactive species can be cooled by being passed through a thermally-conductive gas distribution member. By cooling the reactive species, damage to a low-k dielectric material on the substrate can be avoided.

摘要翻译： 提供了在抗蚀剂剥离室中从半导体衬底剥离抗蚀剂的方法。 所述方法包括在用反应性物质除去抗蚀剂之前，产生包含反应性物质的远程等离子体并冷却腔室内的反应物质。 反应性物质可以通过通过导热气体分配构件而被冷却。 通过冷却反应性物质，可以避免对基底上的低k介电材料的损坏。

公开(公告)号：US20070264841A1

公开(公告)日：2007-11-15

申请号：US11431104

申请日：2006-05-10

申请人： Robert Chebi ,  Jaroslaw Winniczek ,  Alan Miller ,  Gladys Lo

发明人： Robert Chebi ,  Jaroslaw Winniczek ,  Alan Miller ,  Gladys Lo

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31138 ,  H01J37/321 ,  H01J2237/3342

摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.

摘要翻译： 处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域 在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层 包括已经存在于活性区域中的来自添加剂的至少一种元素。

公开(公告)号：US08431461B1

公开(公告)日：2013-04-30

申请号：US13329035

申请日：2011-12-16

申请人： Qinghua Zhong ,  Yoshie Kimura ,  Tae Won Kim ,  Qian Fu ,  Gladys Lo ,  Ganesh Upadhyaya ,  Yoko Yamaguchi

发明人： Qinghua Zhong ,  Yoshie Kimura ,  Tae Won Kim ,  Qian Fu ,  Gladys Lo ,  Ganesh Upadhyaya ,  Yoko Yamaguchi

IPC分类号： H01L21/336

CPC分类号： H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/78

摘要： A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.

摘要翻译： 提供了一种用于在衬底上形成具有硅栅极的器件的方法。 氮化硅间隔物形成在硅栅极的侧面上。 使用氮化硅间隔物作为掩模提供离子注入以形成离子注入区域。 非限制性层被选择性地沉积在间隔物和浇口上，所述间隔物和浇口选择性地在栅极和间隔物的顶部和间隔物之间​​沉积较厚的层，而不是在氮化硅间隔物的侧壁上沉积。 在氮化硅间隔物的侧壁上蚀刻掉非共形层的侧壁。 修整氮化硅间隔物。