公开(公告)号：US20060201911A1

公开(公告)日：2006-09-14

申请号：US11429959

申请日：2006-05-09

申请人： Erik Edelberg ,  Robert Chebi ,  Gladys Lo

发明人： Erik Edelberg ,  Robert Chebi ,  Gladys Lo

IPC分类号： C23F1/00

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

公开(公告)号：US20060051965A1

公开(公告)日：2006-03-09

申请号：US10934697

申请日：2004-09-07

申请人： Erik Edelberg ,  Robert Chebi ,  Alex Panchula

发明人： Erik Edelberg ,  Robert Chebi ,  Alex Panchula

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： G03F7/40 ,  G03F7/427 ,  H01L21/31138

摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a hydrocarbon gas, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

摘要翻译： 在覆盖无机层的有机光致抗蚀剂上蚀刻富碳层的方法可以利用包括含氟气体，含氧气体和烃气体的工艺气体以及一种或多种任选的组分来产生有效的等离子体 用无机层的低去除蚀刻富碳层。 富碳层可以在相同的处理室中除去，或者可以在不同的处理室中除去，以用于去除体光致抗蚀剂。

公开(公告)号：US20060219361A1

公开(公告)日：2006-10-05

申请号：US11096820

申请日：2005-04-01

申请人： Ing-Yann Wang ,  Jaroslaw Winniczek ,  David Cooperberg ,  Erik Edelberg ,  Robert Chebi

发明人： Ing-Yann Wang ,  Jaroslaw Winniczek ,  David Cooperberg ,  Erik Edelberg ,  Robert Chebi

IPC分类号： H01L21/306 ,  C03C25/68

CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/85938

摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

公开(公告)号：US20070264841A1

公开(公告)日：2007-11-15

申请号：US11431104

申请日：2006-05-10

申请人： Robert Chebi ,  Jaroslaw Winniczek ,  Alan Miller ,  Gladys Lo

发明人： Robert Chebi ,  Jaroslaw Winniczek ,  Alan Miller ,  Gladys Lo

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31138 ,  H01J37/321 ,  H01J2237/3342

摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.

摘要翻译： 处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域 在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层 包括已经存在于活性区域中的来自添加剂的至少一种元素。

公开(公告)号：US20060073997A1

公开(公告)日：2006-04-06

申请号：US10955810

申请日：2004-09-30

申请人： Oana Leonte ,  Robert Chebi

发明人： Oana Leonte ,  Robert Chebi

IPC分类号： C23G1/00 ,  C11D7/32

CPC分类号： C11D3/044 ,  C11D1/523 ,  C11D1/90 ,  C11D3/2058 ,  C11D3/2079 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/0206

摘要： A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an α,α-dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficiency equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step preserving the silicon and silicon oxide substrate integrity and effectively remove contaminants such as organics, particles and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCl and sulfuric acid.

摘要翻译： 公开了一种用于清洁硅半导体或硅氧化物的解决方案，以及使用该溶液来清洗硅半导体或氧化硅的方法。 溶液包括过氧化氢，氢氧化铵，链烷醇胺，以及四烷基氢氧化铵，链烷醇酰胺，酰氨基 - 甜菜碱，α，α-二羟基苯酚，羧酸，膦酸，螯合剂或表面活性剂中的至少一种 。 氢氧化铵与过氧化氢与水的重量比约为1:1:5:1:1-4:50，氢氧化铵与水的重量比为1:5至1:50，摩尔比 组分A与氢氧化铵的摩尔比为1:10至1:5000。 该解决方案可以在较短时间内实现与传统RCA两步清洗溶液相当的效率，通过一步保持硅和氧化硅底物的完整性，并有效地从硅半导体表面去除有机物，颗粒和金属等污染物 和氧化硅，而不使用强酸如HCl和硫酸。

公开(公告)号：US06759336B1

公开(公告)日：2004-07-06

申请号：US10295912

申请日：2002-11-18

申请人： Robert Chebi ,  David Hemker

发明人： Robert Chebi ,  David Hemker

IPC分类号： H01L21311

CPC分类号： H01L21/67115 ,  B08B7/0071 ,  H01L21/67028 ,  H01L21/67103 ,  H01L21/67109 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14 ,  Y10S438/904 ,  Y10S438/913

摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove absorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.

摘要翻译： 提供了减少处理后的半导体衬底污染的方法。 该方法包括加热经处理的基底以通过热解吸从基底表面除去吸收的化学物质。 热解吸可以原位或非原位进行。 可以通过对流，传导和/或辐射加热来加热衬底。 也可以通过用惰性等离子体处理处理的基板的表面来加热基板，在惰性等离子体中处理等离子体中的离子轰击衬底表面，提高其温度。 也可以通过在将衬底从处理室传送过程中向衬底施加热能和/或通过将衬底传送到传输模块（例如，装载锁）或第二处理室来进行热解吸， 加热。 通过在衬底表面上吹扫惰性气体可以提高运输过程中的热解吸。

公开(公告)号：US06528427B2

公开(公告)日：2003-03-04

申请号：US09820690

申请日：2001-03-30

申请人： Robert Chebi ,  David Hemker

发明人： Robert Chebi ,  David Hemker

IPC分类号： H01L21311

CPC分类号： H01L21/67115 ,  B08B7/0071 ,  H01L21/67028 ,  H01L21/67103 ,  H01L21/67109 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14 ,  Y10S438/904 ,  Y10S438/913

摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.

公开(公告)号：US07824519B2

公开(公告)日：2010-11-02

申请号：US11750985

申请日：2007-05-18

申请人： Ing-Yann Albert Wang ,  Robert Chebi

发明人： Ing-Yann Albert Wang ,  Robert Chebi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32458

摘要： A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.

摘要翻译： 等离子体处理室包括基板支撑件，该基板支撑件具有限定的顶表面，以在该腔室内以基本上水平的方向支撑基板。 等离子体处理室还包括多个伸缩构件，其设置在基板支撑件的外围的腔室内。 伸缩构件的数量也相对于衬底支撑件的顶表面的中心以同心的方式设置。 多个伸缩构件中的每一个被限定为在基本上垂直的方向上独立地移动，以便能够调整衬底支撑件的顶表面之上的开放体积，从而使得能够在开口体积以内的等离子体状态 衬底支撑的顶表面。

公开(公告)号：US07547635B2

公开(公告)日：2009-06-16

申请号：US10170424

申请日：2002-06-14

申请人： Aaron Eppler ,  Mukund Srinivasan ,  Robert Chebi

发明人： Aaron Eppler ,  Mukund Srinivasan ,  Robert Chebi

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

摘要： A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x≧1, y≧1, and z≧0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x≧1 and y≧4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

摘要翻译： 蚀刻电介质层中的开口的过程包括在等离子体蚀刻反应器中支撑半导体衬底，所述衬底在电介质层上方具有电介质层和图案化的光致抗蚀剂和/或硬掩模层; 向等离子体蚀刻反应器供应包括（a）碳氟化合物气体（CxFyHz，其中x> = 1，y> = 1和z> = 0）的蚀刻剂气体，（b）含硅烷的气体，氢气或烃 气体（CxHy，其中x> = 1和y> = 4），（c）任选的含氧气体，和（d）任选的惰性气体，其中含硅烷气体与碳氟化合物气体的流速比为 小于或等于0.1，或者氢气或烃气体与碳氟化合物气体的流量比小于或等于0.5; 将蚀刻剂气体激发成等离子体; 以及具有增强的光致抗蚀剂/硬掩模的电介质层中的等离子体蚀刻开口至介电层选择性和/或最小的光致抗蚀剂失真或条纹。

公开(公告)号：US20080286489A1

公开(公告)日：2008-11-20

申请号：US11750985

申请日：2007-05-18

申请人： Ing-Yann Albert Wang ,  Robert Chebi

发明人： Ing-Yann Albert Wang ,  Robert Chebi

IPC分类号： H05H1/24

CPC分类号： H01J37/32458

摘要： A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.

摘要翻译： 等离子体处理室包括基板支撑件，该基板支撑件具有限定的顶表面，以在该腔室内以基本上水平的方向支撑基板。 等离子体处理室还包括多个伸缩构件，其设置在基板支撑件的外围的腔室内。 伸缩构件的数量也相对于衬底支撑件的顶表面的中心以同心的方式设置。 多个伸缩构件中的每一个被限定为在基本上垂直的方向上独立地移动，以便能够调整衬底支撑件的顶表面之上的开放体积，从而使得能够在开口体积以内的等离子体状态 衬底支撑的顶表面。