公开(公告)号：US20090152664A1

公开(公告)日：2009-06-18

申请号：US12106256

申请日：2008-04-18

申请人： Ethan Jacob Dukenfield Klem ,  Dean Delehanty MacNeil ,  Gerasimos Konstantatos ,  Jiang Tang ,  Michael Charles Brading ,  Hui Tian ,  Edward Hartley Sargent

发明人： Ethan Jacob Dukenfield Klem ,  Dean Delehanty MacNeil ,  Gerasimos Konstantatos ,  Jiang Tang ,  Michael Charles Brading ,  Hui Tian ,  Edward Hartley Sargent

IPC分类号： H01L31/0224 ,  H01L31/02

CPC分类号： H01L31/1013 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/036

摘要： A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

摘要翻译： 描述光电探测器以及相应的材料，系统和方法。 光电检测器包括集成电路和至少两个光敏层。 第一光敏层在集成电路的至少一部分之上，第二光敏层位于第一光敏层之上。 每个光敏层插在两个电极之间。 两个电极包括相应的第一电极和相应的第二电极。 集成电路选择性地向电极施加偏压并从光敏层读取信号。 该信号与相应的光敏层所接收的光子的数量有关。

公开(公告)号：US08022391B2

公开(公告)日：2011-09-20

申请号：US12426854

申请日：2009-04-20

申请人： Edward Hartley Sargent ,  Ghada Koleilat ,  Jiang Tang ,  Keith William Johnston ,  Andras Geza Pattantyus-Abraham ,  Gerasimos Konstantatos ,  Ethan Jacob Dukenfield Klem ,  Stefan Myrskog ,  Dean Delehanty MacNeil ,  Jason Paul Clifford ,  Larissa Levina

发明人： Edward Hartley Sargent ,  Ghada Koleilat ,  Jiang Tang ,  Keith William Johnston ,  Andras Geza Pattantyus-Abraham ,  Gerasimos Konstantatos ,  Ethan Jacob Dukenfield Klem ,  Stefan Myrskog ,  Dean Delehanty MacNeil ,  Jason Paul Clifford ,  Larissa Levina

IPC分类号： H01L29/06

摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

公开(公告)号：US20100044676A1

公开(公告)日：2010-02-25

申请号：US12426854

申请日：2009-04-20

申请人： Edward Hartley Sargent ,  Ghada Koleilat ,  Jiang Tang ,  Keith William Johnston ,  Andras Geza Pattantyus-Abraham ,  Gerasimos Konstantatos ,  Ethan Jacob Dukenfield Klem ,  Stefan Myrskog ,  Dean Delehanty MacNeil ,  Jason Paul Clifford ,  Larissa Levina

发明人： Edward Hartley Sargent ,  Ghada Koleilat ,  Jiang Tang ,  Keith William Johnston ,  Andras Geza Pattantyus-Abraham ,  Gerasimos Konstantatos ,  Ethan Jacob Dukenfield Klem ,  Stefan Myrskog ,  Dean Delehanty MacNeil ,  Jason Paul Clifford ,  Larissa Levina

IPC分类号： H01L31/0352

CPC分类号： H01L51/4213 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/0046 ,  H01L51/0084 ,  H01L51/441 ,  Y02E10/541 ,  Y02P70/521

摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

摘要翻译： 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。