公开(公告)号：US5838762A

公开(公告)日：1998-11-17

申请号：US762013

申请日：1996-12-11

申请人： Eti Ganin ,  Mark O. Derakhshan ,  Thomas G. Ebben

发明人： Eti Ganin ,  Mark O. Derakhshan ,  Thomas G. Ebben

IPC分类号： H01J9/14 ,  H01J35/10

CPC分类号： H01J35/10 ,  H01J2235/1013

摘要： A method for assembling a rotating X-ray tube structure ensures balance retention during the life of the tube. The X-ray tube structure has a cathode for emitting electrons, and a rotor and a bearing assembly for facilitating rotation of an anode. At least one joint is identified in the X-ray tube structure and interference fit assembly is used to eliminate shifts at the joint. The interference fit assembly is particularly advantageous for eliminating even the minutest shifts in the main joints of the anode assembly. Interference fit assembly can be applied between the rotor and the anode target to provide a first joint having balance retention; and interference fit assembly can be applied between the bearing assembly and the rotor to provide a second joint having balance retention.

摘要翻译： 一种组装旋转X射线管结构的方法确保了管子寿命期间的平衡保持。 X射线管结构具有用于发射电子的阴极和用于促进阳极旋转的转子和轴承组件。 在X射线管结构中识别至少一个关节，并且使用过盈配合组件来消除关节处的移位。 过盈配合组件对于消除甚至阳极组件的主接头中的最小变化是特别有利的。 可以在转子和阳极靶之间施加干涉配合组件，以提供具有平衡保持力的第一接头; 并且可以在轴承组件和转子之间施加过盈配合组件以提供具有平衡保持力的第二接头。

公开(公告)号：US06192107B1

公开(公告)日：2001-02-20

申请号：US09275321

申请日：1999-03-24

申请人： Michael J. Price ,  Paul E. Neitzke ,  Mark E. Vermilyea ,  Douglas J. Snyder ,  Carey S. Rogers ,  Eti Ganin ,  Mark O. Derakhshan ,  Stephen S. Waite

发明人： Michael J. Price ,  Paul E. Neitzke ,  Mark E. Vermilyea ,  Douglas J. Snyder ,  Carey S. Rogers ,  Eti Ganin ,  Mark O. Derakhshan ,  Stephen S. Waite

IPC分类号： H01J3510

CPC分类号： H01J35/106 ,  H01J2235/1204 ,  H01J2235/1266 ,  H01J2235/1279

摘要： A system and method are proposed for cooling the anode of an X-ray tube. A bearing shaft associated with the anode has an associated single rotating seal there around, and contains a liquid metal. A primary liquid metal flow path is used to transfer heat from the anode, and a secondary liquid metal flow path is provided to seal the single rotating seal. Accordingly, the present invention provides an effective means for containing liquid metal in the bearing shaft of an anode assembly, and using the liquid metal to cool the anode of the X-ray tube.

摘要翻译： 提出了用于冷却X射线管的阳极的系统和方法。 与阳极相关联的轴承轴在其周围具有相关联的单个旋转密封，并且包含液态金属。 主要的液态金属流动路径用于从阳极传递热量，并且提供次级液态金属流动路径以密封​​单个旋转密封件。 因此，本发明提供了一种在阳极组件的轴承轴中容纳液态金属并使用液态金属冷却X射线管的阳极的有效手段。

公开(公告)号：US06334912B1

公开(公告)日：2002-01-01

申请号：US09224665

申请日：1998-12-31

申请人： Eti Ganin ,  Gregory Reznikov

发明人： Eti Ganin ,  Gregory Reznikov

IPC分类号： C22C3000

CPC分类号： C22F1/10

摘要： A thermomechanical process for producing high strength and thermally stable alloys, comprising the steps of: pre-heating an alloy bar or rod stock of a pre-selected size at a temperature below that at which grain growth occurs; and thereafter rotoforging the heated alloy bar or rod stock at a sufficient deformation level and temperature to fragment the grain boundary phases of the alloy. The resulting alloy is characterized by an ultra-fine, very uniform grain size, high tensile strength at room and high temperatures, good ductility, and a stress-rupture rate that is about twice as long as conventional alloys that have not undergone the thermomechanical process.

摘要翻译： 一种用于生产高强度和热稳定合金的热机械方法，包括以下步骤：在低于晶粒生长发生的温度下预热预选尺寸的合金棒或棒料; 然后以足够的变形水平和温度旋转加热的合金棒或棒材，以使合金的晶界相分裂。 所得合金的特征在于超细，非常均匀的晶粒尺寸，室温和高温下的高拉伸强度，良好的延展性，以及不经历机械过程的常规合金的约两倍的应力破裂速率 。

公开(公告)号：US06774463B1

公开(公告)日：2004-08-10

申请号：US07842722

申请日：1992-02-24

申请人： Praveen Chaudhari ,  Richard Joseph Gambino ,  Eti Ganin ,  Roger Hilsen Koch ,  Lia Krusin-Elbaum ,  Robert Benjamin Laibowitz ,  George Anthony Sai-Halasz ,  Yuan-Chen Sun ,  Matthew Robert Wordeman

发明人： Praveen Chaudhari ,  Richard Joseph Gambino ,  Eti Ganin ,  Roger Hilsen Koch ,  Lia Krusin-Elbaum ,  Robert Benjamin Laibowitz ,  George Anthony Sai-Halasz ,  Yuan-Chen Sun ,  Matthew Robert Wordeman

IPC分类号： H01L3900

CPC分类号： H01L29/4966 ,  H01L29/437 ,  Y10S505/873

摘要： In a Field Effect Transistor (FET) with a semiconductor channel the use of a high Tc oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.

摘要翻译： 在具有半导体通道的场效应晶体管（FET）中，栅电极中使用高Tc氧化物超导体材料在低于Tc的温度下工作时，提供寄生电阻和电容的控制以及适当的功函数。 具有通式Y1Ba2Cu3O7-y的1-2-3复合氧化物超导体，其中y约为0.1具有在FET中使用的能力，以提供方便的工作功能，低电阻和电容，并且能够承受处理中遇到的温度，因为FET为 被制造。

公开(公告)号：US06448566B1

公开(公告)日：2002-09-10

申请号：US09681301

申请日：2001-03-15

申请人： Robert J. Riedner ,  David M. Hoffman ,  Richard J. Ruzga ,  Eti Ganin

发明人： Robert J. Riedner ,  David M. Hoffman ,  Richard J. Ruzga ,  Eti Ganin

IPC分类号： G01T124

CPC分类号： G01T1/202

摘要： To provide simpler, more efficient methods for making scintillator arrays, one embodiment of the present invention is a method for making a scintillator array. The method includes extruding a mixture of a scintillator powder and a binder into rods; laminating the extruded rods with a sinterable reflector material; and sintering the laminated rods and reflector material into a scintillator block. Scintillator array embodiments of the present invention are useful in many types of pixelated radiation detectors, such as those used in computed tomography systems.

摘要翻译： 为了提供更简单，更有效的制造闪烁体阵列的方法，本发明的一个实施例是制造闪烁体阵列的方法。 该方法包括将闪烁体粉末和粘合剂的混合物挤出到棒中; 用可烧结的反射器材料层压挤出的棒; 并将层压棒和反射体材料烧结成闪烁体块。 本发明的闪烁体阵列实施例可用于许多类型的像素化辐射检测器，例如在计算机断层摄影系统中使用的那些。

公开(公告)号：US4889819A

公开(公告)日：1989-12-26

申请号：US196398

申请日：1988-05-20

申请人： Bijan Davari ,  Eti Ganin ,  David L. Harame ,  George A. Sai-Halasz

发明人： Bijan Davari ,  Eti Ganin ,  David L. Harame ,  George A. Sai-Halasz

IPC分类号： H01L21/265

CPC分类号： H01L21/26513 ,  H01L21/26506

摘要： Shallow junctions of a first conductivity type in a semiconductor of the opposite conductivity type are fabricated by doping the substrate with a dopant of an opposite conductivity type than the first conductivity type to preamorphize portions of the substrate. The dopant of the opposite conductivity type must have a molecular weight that is higher than the molecular weight of the substrate. The substrate is then doped with the dopant of the first conductivity type to form the shallow junctions.