公开(公告)号：US07742328B2

公开(公告)日：2010-06-22

申请号：US11764057

申请日：2007-06-15

申请人： Eugene Chen ,  Yiming Huai ,  Alexander A. G. Driskill-Smith

发明人： Eugene Chen ,  Yiming Huai ,  Alexander A. G. Driskill-Smith

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/7854 ,  Y10S977/935

摘要： A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

摘要翻译： 描述了包含该单元的磁存储单元和磁存储器。 磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。 磁性元件可通过驱动通过磁性元件的写入电流来编程。 磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线，以及对应于多个磁存储单元的多个源极线。

公开(公告)号：US09236561B2

公开(公告)日：2016-01-12

申请号：US13604182

申请日：2012-09-05

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

IPC分类号： H01L21/00 ,  H01L29/82 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  G11C11/56 ,  G11C11/16 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.

摘要翻译： 提供包括存储单元的磁性装置。 每个存储器单元可以存储对应于多个数据存储层的多个位。 在每个存储单元中确定数据存储层的期望间隔和所需的结合角度。 期望的结角和期望的间隔对应于具有数据存储层的自旋转移开关电流。 存储包括用于每个存储器单元的多个层的磁阻堆叠。 存储单元包括数据存储层。 数据存储层层与最近的数据存储层间隔一段与期望间隔相对应的距离。 在层上提供对应于存储单元的掩模。 存储器单元被定义为使得每个存储器单元具有期望的结合角和期望的间隔，并且使得每个存储器单元的数据存储层是自对准的。

公开(公告)号：US08446761B2

公开(公告)日：2013-05-21

申请号：US13031001

申请日：2011-02-18

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

IPC分类号： G11C11/15

CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.

摘要翻译： 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，多个非磁性间隔层和多个自由层。 自由层与非磁性间隔层交错。 非磁性间隔层的第一非磁性间隔层位于自由层和被钉扎层之间。 每个自由层配置成当写入电流通过磁结时在稳定磁状态之间切换。 每个自由层具有关键的开关电流密度。 一个自由层的关键开关电流密度从相邻自由层的临界开关电流密度单调变化。 相邻的自由层在被钉扎层和多个自由层中的一个之间。

公开(公告)号：US08422285B2

公开(公告)日：2013-04-16

申请号：US13033021

申请日：2011-02-23

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith ,  Steven M. Watts ,  David Druist

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith ,  Steven M. Watts ,  David Druist

IPC分类号： G11C11/14

CPC分类号： G11C11/5607 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 固定层是非磁性层，并且是自固定的。 在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。 磁结有两个以上的稳定状态。 在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。 磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。