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1.发明授权High purity sputter targets with target end-of-life indication and method of manufacture 有权具有目标寿命终止指示和制造方法的高纯度溅射靶公开(公告)号：US07063773B2
公开(公告)日：2006-06-20
申请号：US10344783
申请日：2001-08-17
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/3414 , H01J37/3426 , H01J37/3482 , H01J37/3491
摘要： A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (50, 160); causing the sputter target assembly (50, 160) to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly (50, 160) to detect the electromagnetic signal.
摘要翻译： 优选的溅射靶组件（10,10'）包括靶（12,12'），沿着界面（22,22'）结合到靶（12,12'）的背板（14,14'）和 在目标（12,12'）和背板（14,14'）之间的介电颗粒（20,20'）。 用于制造溅射靶组件（10,10'）的优选方法包括提供靶（12,12'）和背板（14,14'）的步骤。 在所述靶（12,12'）的配合表面（24,26）和所述背板（14,14'）之间分布所述电介质颗粒（20,20'），最优选地沿着所述匹配中的一个上的溅射轨迹图案 表面 以及沿所述配合表面（24,26）将所述目标（12,12'）结合到所述背板（14,14'）。 根据本发明的优选溅射方法包括以下步骤：向溅射靶（50,160）施加电力; 当存在目标寿命终止状态时，使溅射靶组件（50,160）产生电磁信号（未示出）; 以及监测溅射靶组件（50,160）以检测电磁信号。
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公开(公告)号：US06872284B2
公开(公告)日：2005-03-29
申请号：US10312050
申请日：2002-02-20
CPC分类号： H01J37/3482 , C23C14/3407 , C23C14/35
摘要： A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.
摘要翻译： 公开了一种通过该方法制造增加寿命的溅射靶和靶的方法。 该方法包括从前体靶设计或轮廓开始，并沿着相同的表面的径向表面和在表面上方的多个垂直尺寸进行磁场强度测量。 在目标的侵蚀轨迹之间提供最佳磁场强度比。 确定要添加到一个侵蚀轨迹中的材料的垂直尺寸，然后通过利用该最佳磁场强度比来计算另一个侵蚀轨迹的高度。
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3.发明授权公开(公告)号：US08453487B2
公开(公告)日：2013-06-04
申请号：US12998328
申请日：2009-10-09
CPC分类号： B21D17/02 , B21D13/02 , B21D22/02 , C23C14/3407
摘要： A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition.
摘要翻译： 使用圆形凹槽压制制造金属靶坯的方法包括将金属或金属合金靶材坯料压在设置成第一同心波纹形状的第一圆形沟槽压模中，同时保持目标坯料的原始直径以产生剪切变形的同心环 在目标空白。 然后将力施加到同心的波纹状目标坯料上，足以在保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态的同时用平坦的模具组件基本上平坦化目标坯料。 目标坯料被压在第二圆形槽模具中，同时保持目标坯料的原始直径，其中第二模具组具有从第一模具组的凹槽图案偏移的凹槽图案，以便于 在目标坯料的以前没有变形的区域中产生剪切变形的同心环。 力再次施加到同心的波纹状目标坯料上，足以使平板模具基本上平坦化目标坯料，同时保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态。
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4.发明申请CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING 失效圆锥滚子压力机构及喷射目标制造方法公开(公告)号：US20110219847A1
公开(公告)日：2011-09-15
申请号：US12998328
申请日：2009-10-09
CPC分类号： B21D17/02 , B21D13/02 , B21D22/02 , C23C14/3407
摘要： A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition.
摘要翻译： 使用圆形凹槽压制制造金属靶坯的方法包括将金属或金属合金靶材坯料压在设置成第一同心波纹形状的第一圆形沟槽压模中，同时保持目标坯料的原始直径以产生剪切变形的同心环 在目标空白。 然后将力施加到同心的波纹状目标坯料上，足以在保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态的同时用平坦的模具组件基本上平坦化目标坯料。 目标坯料被压在第二圆形槽模具中，同时保持目标坯料的原始直径，其中第二模具组具有从第一模具组的凹槽图案偏移的凹槽图案，以便于 在目标坯料的以前没有变形的区域中产生剪切变形的同心环。 力再次施加到同心的波纹状目标坯料上，足以使平板模具基本上平坦化目标坯料，同时保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态。
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公开(公告)号：US09546418B2
公开(公告)日：2017-01-17
申请号：US13984961
申请日：2012-02-09
申请人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
发明人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
CPC分类号： H01J37/3426 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3423 , H01J37/3435
摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和背衬板之间的Al中间层。 该组件的粘合强度超过50MPa。
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公开(公告)号：US08992748B2
公开(公告)日：2015-03-31
申请号：US13525988
申请日：2012-06-18
CPC分类号： C23C14/3414 , C23C14/0617 , H01J37/3255 , H01J37/3426 , H01L2924/0002 , H01L2924/00
摘要： A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.
摘要翻译： 由铝和一种或多种包括Ni，Co，Ti，V，Cr，Mn，Mo，Nb，Ta，W和稀土金属（REM）的合金元素制成的溅射靶。 向纯铝和铝合金靶添加非常少量的合金元素可以通过影响目标的再结晶过程来提高沉积布线膜的均匀性。 合金元素含量的范围为0.01〜100重量ppm，足以防止纯铝和铝合金如30ppm Si合金的动态再结晶。 添加少量合金元素可以提高纯铝和铝合金薄膜的热稳定性和电迁移能力，同时保持其低电阻率和良好的可蚀刻性。 本发明还提供一种制造微合金铝和铝合金溅射靶的方法。
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公开(公告)号：US20140034490A1
公开(公告)日：2014-02-06
申请号：US13984961
申请日：2012-02-09
申请人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
发明人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
IPC分类号： C23C14/34
CPC分类号： H01J37/3426 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3423 , H01J37/3435
摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al inter-layer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和衬板之间的Al层间。 该组件的粘合强度超过50MPa。
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公开(公告)号：US20120298506A1
公开(公告)日：2012-11-29
申请号：US13525988
申请日：2012-06-18
CPC分类号： C23C14/3414 , C23C14/0617 , H01J37/3255 , H01J37/3426 , H01L2924/0002 , H01L2924/00
摘要： A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.
摘要翻译： 由铝和一种或多种包括Ni，Co，Ti，V，Cr，Mn，Mo，Nb，Ta，W和稀土金属（REM）的合金元素制成的溅射靶。 向纯铝和铝合金靶添加非常少量的合金元素可以通过影响目标的再结晶过程来提高沉积布线膜的均匀性。 合金元素含量的范围为0.01〜100重量ppm，足以防止纯铝和铝合金如30ppm Si合金的动态再结晶。 添加少量合金元素可提高纯铝和铝合金薄膜的热稳定性和电迁移率，同时保持其低电阻率和良好的可蚀刻性。 本发明还提供一种制造微合金铝和铝合金溅射靶的方法。
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9.发明申请Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same 审中-公开具有细粒度和高耐电迁移性的铜溅射靶及其制造方法公开(公告)号：US20100000860A1
公开(公告)日：2010-01-07
申请号：US12310699
申请日：2007-08-29
CPC分类号： C23C14/3414 , C22C1/02 , C22C9/00
摘要： The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
摘要翻译： 本发明通常提供一种溅射靶，其包含铜和总共0.001重量％〜10重量％的选自Al，Ag，Co，Cr，Ir，Fe，Mo，Ti，Pd，Ru的合金元素或元素 ，Ta，Sc，Hf，Zr，V，Nb，Y和稀土金属。 含有0.5重量％铝的示例性铜溅射具有超细晶粒尺寸，高热稳定性和高电迁移性，并且能够形成具有期望的膜均匀性，优异的电迁移和氧化性以及对电介质中间层的高粘附性的膜。 含有12ppm银的示例性铜溅射具有超细晶粒尺寸。 本发明还提供了制造铜溅射靶的方法。
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公开(公告)号：US20090008786A1
公开(公告)日：2009-01-08
申请号：US12223499
申请日：2007-02-26
CPC分类号： C23C14/3414 , C23C14/0617 , H01J37/3255 , H01J37/3426 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.
摘要翻译： 本发明提供一种包含铝和一种或多种包括Ni，Co，Ti，V，Cr，Mn，Mo，Nb，Ta，W和稀土金属（REM）的合金元素的溅射靶。 向纯铝和铝合金靶添加非常少量的合金元素可以通过影响目标的再结晶过程来提高沉积布线膜的均匀性。 合金元素含量的范围为0.01〜100ppm，优选为0.1〜50ppm，更优选为0.1〜10ppm，足以防止纯铝和铝合金如30ppm Si合金的动态再结晶 。 添加少量合金元素可以提高纯铝和铝合金薄膜的热稳定性和电迁移能力，同时保持其低电阻率和良好的可蚀刻性。 本发明还提供一种制造微合金铝和铝合金溅射靶的方法。
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