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公开(公告)号：US06872284B2
公开(公告)日：2005-03-29
申请号：US10312050
申请日：2002-02-20
CPC分类号： H01J37/3482 , C23C14/3407 , C23C14/35
摘要： A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.
摘要翻译： 公开了一种通过该方法制造增加寿命的溅射靶和靶的方法。 该方法包括从前体靶设计或轮廓开始，并沿着相同的表面的径向表面和在表面上方的多个垂直尺寸进行磁场强度测量。 在目标的侵蚀轨迹之间提供最佳磁场强度比。 确定要添加到一个侵蚀轨迹中的材料的垂直尺寸，然后通过利用该最佳磁场强度比来计算另一个侵蚀轨迹的高度。
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2.发明授权High purity sputter targets with target end-of-life indication and method of manufacture 有权具有目标寿命终止指示和制造方法的高纯度溅射靶公开(公告)号：US07063773B2
公开(公告)日：2006-06-20
申请号：US10344783
申请日：2001-08-17
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/3414 , H01J37/3426 , H01J37/3482 , H01J37/3491
摘要： A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (50, 160); causing the sputter target assembly (50, 160) to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly (50, 160) to detect the electromagnetic signal.
摘要翻译： 优选的溅射靶组件（10,10'）包括靶（12,12'），沿着界面（22,22'）结合到靶（12,12'）的背板（14,14'）和 在目标（12,12'）和背板（14,14'）之间的介电颗粒（20,20'）。 用于制造溅射靶组件（10,10'）的优选方法包括提供靶（12,12'）和背板（14,14'）的步骤。 在所述靶（12,12'）的配合表面（24,26）和所述背板（14,14'）之间分布所述电介质颗粒（20,20'），最优选地沿着所述匹配中的一个上的溅射轨迹图案 表面 以及沿所述配合表面（24,26）将所述目标（12,12'）结合到所述背板（14,14'）。 根据本发明的优选溅射方法包括以下步骤：向溅射靶（50,160）施加电力; 当存在目标寿命终止状态时，使溅射靶组件（50,160）产生电磁信号（未示出）; 以及监测溅射靶组件（50,160）以检测电磁信号。
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3.发明授权Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering 失效溅射靶及其制造方法，以减少溅射过程中的颗粒物排放公开(公告)号：US07712514B2
公开(公告)日：2010-05-11
申请号：US12315205
申请日：2008-12-01
IPC分类号： B22D1/00
CPC分类号： C22C21/14 , C22B21/06 , C22B21/066 , C22C21/02 , C23C14/3414 , C23C14/564
摘要： Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 μm are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.
摘要翻译： 公开了减少如此制造的溅射靶和靶的夹杂物含量的方法。 可以通过向熔融的Al或熔融的Al合金中加入少量的Si，然后通过过滤介质过滤熔融金属来减少夹杂物。 基本上没有夹杂物的目标大于约400μm特别适用于大型平板显示器的溅射，并且在溅射时导致溅射到基板上的大颗粒的量减少。
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4.发明授权Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target 有权用于确定铝或铝合金溅射靶中的夹杂物的临界尺寸的方法公开(公告)号：US07087142B2
公开(公告)日：2006-08-08
申请号：US10473844
申请日：2002-04-04
IPC分类号： C25C14/34
CPC分类号： H01J37/3426 , C23C14/3414
摘要： The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.
摘要翻译： 本发明涉及一种用于确定Al或Al合金溅射靶（42）中的Al 2 O 3 N 2夹杂物（38）的直径的临界尺寸的方法， 以防止溅射期间的电弧。 该方法包括提供具有氩等离子体的溅射装置。 等离子体在溅射期间具有已知厚度的等离子体护套，在Al或Al合金溅射靶的溅射环境中，Al或Al合金溅射靶具有Al 2 N 3 O 3不含夹杂物的溅射表面 。 当对于选定的溅射环境来说已知护套的厚度时，可以基于厚度来确定Al 2 N 3 N 3夹杂物（38）的临界尺寸 鞘。 更具体地说，Al或Al合金溅射靶（42）中的Al 2 N 3 N 3夹杂物（38）的直径必须小于等离子体鞘的厚度 在溅射环境中进行溅射以抑制电弧放电。
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5.发明授权Thermography test method and apparatus for bonding evaluation in sputtering targets 失效用于溅射靶中接合评估的热成像测试方法和设备公开(公告)号：US07425093B2
公开(公告)日：2008-09-16
申请号：US10890378
申请日：2004-07-13
申请人： Charles E. Wickersham, Jr. , Zhiguo Zhang , Larry Edwin Ellison , Mikhail Y. Kachalov , John D. White, III
发明人： Charles E. Wickersham, Jr. , Zhiguo Zhang , Larry Edwin Ellison , Mikhail Y. Kachalov , John D. White, III
CPC分类号： H01J37/3497 , C23C14/3407 , G01J5/0003 , G06T7/0004 , G06T2207/30152 , H01J37/3435
摘要： A method and apparatus for thermographically evaluating the bond integrity of a sputtering target assembly is described. The method includes applying a heating or cooling medium or energy to one surface of the assembly and acquiring a graphic recording of a corresponding temperature change on the opposing surface of the assembly using an imaging device. Also described is a method of mathematically analyzing the pixel data recorded in each frame to produce an integrated normalized temperature map that represents the bond integrity of the assembly.
摘要翻译： 描述了用于热成像评估溅射靶组件的结合完整性的方法和装置。 该方法包括将加热或冷却介质或能量施加到组件的一个表面，并且使用成像装置获得在组件的相对表面上的相应温度变化的图形记录。 还描述了一种数学分析记录在每个帧中的像素数据以产生表示组件的粘合完整性的积分归一化温度图的方法。
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6.发明授权Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby 失效将含钛溅射靶接合到由其制造的背板和结合的目标/背板组件的方法
公开(公告)号：US5282943A
公开(公告)日：1994-02-01
申请号：US896170
申请日：1992-06-10
CPC分类号： H01J37/3426 , B23K35/005 , C23C14/165 , C23C14/3407 , H01J37/3435 , H01J37/3497
摘要： Methods of bonding a titanium containing sputter target member to a heat conductive backing member, such as a copper backing plate, and bonded target/backing plate assemblies are disclosed. Due to the poor wettability of titanium based materials, a uniform, thin film of aluminum is coated thereover and acts as an anchor layer for application of tin and/or indium based solder layers thereover to securely solder bond the target and backing plate. The aluminum coating is sputter coated onto the target. Then, the coated target is heated in an oxygen containing atmosphere. The thus treated titanium target is then ready for conventional solder joining to a copper backing plate or the like by use of tin, lead, and/or indium based solder metals.
摘要翻译： 公开了将含钛溅射靶构件粘合到导热背衬构件（例如铜背衬板）和结合的靶/背板组件的方法。 由于钛基材料的润湿性差，因此在其上涂覆均匀的铝薄膜，作为其上的锡和/或铟基焊料层的锚定层，以牢固地焊接目标板和背板。 铝涂层溅射涂覆在目标上。 然后，在含氧气氛中加热涂覆的靶。 然后通过使用锡，铅和/或铟基焊料金属，将如此处理的钛靶准备好用于常规焊料连接到铜背衬板等。
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公开(公告)号：US07998287B2
公开(公告)日：2011-08-16
申请号：US11055535
申请日：2005-02-10
CPC分类号： C22C27/02 , B21B1/02 , B21H1/02 , C22F1/18 , C23C14/3414 , Y10T428/12243
摘要： A process is described for processing metal which includes clock rolling a metal plate until the desired thickness is achieved to form a rolled plate. Sputtering targets and other metal articles are further described.
摘要翻译： 描述了一种处理金属的方法，其包括时钟滚动金属板，直到达到所需厚度以形成轧制板。 进一步描述溅射靶和其它金属制品。
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8.发明授权Method of producing tungsten-titanium sputter targets and targets produced thereby 失效生产钨铁 - 钛矿物靶和目标产品的方法
公开(公告)号：US5234487A
公开(公告)日：1993-08-10
申请号：US685789
申请日：1991-04-15
CPC分类号： C22C27/04 , C22C1/045 , C23C14/3414
摘要： Tungsten-titanium sputter targets of at least 95% theoretical density are provided with little or no .beta.(Ti, W) phase constituent. Such targets will minimize troublesome particulate emissions during sputter coating conditions.
摘要翻译： 提供至少95％理论密度的钨 - 钛溅射靶具有很少或没有β（Ti，W）相成分。 这样的目标将最大限度地减少溅射镀膜条件下的微粒排放。
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公开(公告)号：US08500928B2
公开(公告)日：2013-08-06
申请号：US13551697
申请日：2012-07-18
CPC分类号： C22C5/06 , C22C5/02 , C22C9/00 , C22C14/00 , C22C16/00 , C22C19/07 , C22C21/00 , C22C27/00 , C22F1/16 , C22F1/18 , C23C14/3414
摘要： A method of making sputter targets using rotary axial forging is described. Other thermomechanical working steps can be used prior to and/or after the forging step. Sputter targets are further described which can have unique grain size and/or crystal structures.
摘要翻译： 描述了使用旋转轴向锻造制造溅射靶的方法。 在锻造步骤之前和/或之后可以使用其它热机械加工步骤。 进一步描述可以具有独特的晶粒尺寸和/或晶体结构的溅射靶。
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公开(公告)号：US06992261B2
公开(公告)日：2006-01-31
申请号：US10620314
申请日：2003-07-15
IPC分类号： B23K11/14
CPC分类号： H01J37/3435 , C23C14/3407
摘要： A method of forming a sputtering target assembly and other metal articles is described. Sputtering target assemblies and metal articles are also described. The method includes bonding a sputter target to a backing plate using resistance heating or welding to bond assembly members that respectively include mating projections and grooves formed in bonding surfaces thereof.
摘要翻译： 描述了形成溅射靶组件和其它金属制品的方法。 还描述了溅射靶组件和金属制品。 该方法包括使用电阻加热或焊接将溅射靶结合到背板上，以将组装构件分别包括配合突起和形成在其接合表面中的槽。
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