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1.发明授权Nonvolatile memory device, memory system having the same and block managing method, and program and erase methods thereof 有权非易失性存储器件，具有相同的存储器系统和块管理方法，以及其编程和擦除方法公开(公告)号：US08891300B2
公开(公告)日：2014-11-18
申请号：US13746640
申请日：2013-01-22
申请人： Eun Chu Oh , Jaehong Kim , Jongha Kim , Junjin Kong
发明人： Eun Chu Oh , Jaehong Kim , Jongha Kim , Junjin Kong
IPC分类号： G11C16/04 , G06F12/02 , G11C11/56 , G11C16/10 , H01L27/115
CPC分类号： G06F12/0246 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C2211/5641 , G11C2211/5646 , H01L27/11582
摘要： In one embodiment, the method includes overwriting a memory cell storing m-bit data to store n-bit data, where n is less than or equal to m. The memory cell has one of a first plurality of program states when storing the m-bit data, and the memory cell has one of a second plurality of program states when storing the n-bit data. The second plurality of program states include at least one program state not in the first plurality of program states.
摘要翻译： 在一个实施例中，该方法包括重写存储m位数据以存储n位数据的存储单元，其中n小于或等于m。 当存储m位数据时，存储单元具有第一多个程序状态之一，并且当存储n位数据时存储单元具有第二多个程序状态之一。 第二多个程序状态包括不在第一多个程序状态中的至少一个程序状态。
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2.发明授权Nonvolatle memory device and memory system having the same, and related memory management, erase and programming methods 有权非易失性存储器件和存储器系统具有相同的存储器管理，擦除和编程方法公开(公告)号：US09390001B2
公开(公告)日：2016-07-12
申请号：US13938273
申请日：2013-07-10
申请人： Eun Chu Oh , Jongha Kim , Junjin Kong
发明人： Eun Chu Oh , Jongha Kim , Junjin Kong
CPC分类号： G11C16/16 , G06F12/0246 , G06F12/0253 , G06F2212/7205 , G11C11/5671 , G11C16/0416 , G11C16/0466 , G11C16/3445
摘要： An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.
摘要翻译： 非易失性存储器件的擦除方法包括设置擦除模式，以及根据所设置的擦除模式执行正常擦除操作和快速擦除操作之一。 执行正常擦除操作以将存储器单元的阈值电压设置为低于第一擦除验证电平的擦除状态。 执行快速擦除操作以将存储器单元的阈值电压设置为低于第二擦除验证电平的伪擦除状态。 第二擦除验证级别高于第一擦除验证级别。
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