公开(公告)号：US09837156B2

公开(公告)日：2017-12-05

申请号：US14640653

申请日：2015-03-06

申请人： Changkyu Seol ,  Junjin Kong ,  JongHa Kim ,  Hyejeong So ,  Hong Rak Son ,  Seonghyeog Choi

发明人： Changkyu Seol ,  Junjin Kong ,  JongHa Kim ,  Hyejeong So ,  Hong Rak Son ,  Seonghyeog Choi

IPC分类号： G06F3/06 ,  G11C16/10 ,  G11C7/10 ,  G11C11/56

CPC分类号： G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/102

摘要： The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.

公开(公告)号：US09390001B2

公开(公告)日：2016-07-12

申请号：US13938273

申请日：2013-07-10

申请人： Eun Chu Oh ,  Jongha Kim ,  Junjin Kong

发明人： Eun Chu Oh ,  Jongha Kim ,  Junjin Kong

IPC分类号： G06F12/02 ,  G11C16/34 ,  G11C16/04

CPC分类号： G11C16/16 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205 ,  G11C11/5671 ,  G11C16/0416 ,  G11C16/0466 ,  G11C16/3445

摘要： An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.

摘要翻译： 非易失性存储器件的擦除方法包括设置擦除模式，以及根据所设置的擦除模式执行正常擦除操作和快速擦除操作之一。 执行正常擦除操作以将存储器单元的阈值电压设置为低于第一擦除验证电平的擦除状态。 执行快速擦除操作以将存储器单元的阈值电压设置为低于第二擦除验证电平的伪擦除状态。 第二擦除验证级别高于第一擦除验证级别。

公开(公告)号：US20160011807A1

公开(公告)日：2016-01-14

申请号：US14640653

申请日：2015-03-06

申请人： Changkyu SEOL ,  Junjin KONG ,  JongHa KIM ,  Hyejeong SO ,  Hong Rak SON ,  Seonghyeog CHOI

发明人： Changkyu SEOL ,  Junjin KONG ,  JongHa KIM ,  Hyejeong SO ,  Hong Rak SON ,  Seonghyeog CHOI

IPC分类号： G06F3/06

CPC分类号： G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/102

摘要： The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.

摘要翻译： 存储装置的操作方法包括：接收要写入多个存储单元的写入数据; 确定所接收的写入数据是否要被写入所述多个存储器单元的LSB数据; 以及根据确定对写入数据进行编码。 当写入数据是要写入多个存储器单元的LSB数据时，根据写入数据对写入数据进行编码。 当写入数据不是要写入多个存储器单元的LSB数据时，写数据根据写数据和要写入多个存储单元的写数据的较低数据的编码数据进行编码。

公开(公告)号：US20140019675A1

公开(公告)日：2014-01-16

申请号：US13938273

申请日：2013-07-10

申请人： Eun Chu OH ,  Jongha KIM ,  Junjin KONG

发明人： Eun Chu OH ,  Jongha KIM ,  Junjin KONG

IPC分类号： G06F12/02 ,  G11C16/34

CPC分类号： G11C16/16 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205 ,  G11C11/5671 ,  G11C16/0416 ,  G11C16/0466 ,  G11C16/3445

摘要： An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.

摘要翻译： 非易失性存储器件的擦除方法包括设置擦除模式，以及根据所设置的擦除模式执行正常擦除操作和快速擦除操作之一。 执行正常擦除操作以将存储器单元的阈值电压设置为低于第一擦除验证电平的擦除状态。 执行快速擦除操作以将存储器单元的阈值电压设置为低于第二擦除验证电平的伪擦除状态。 第二擦除验证级别高于第一擦除验证级别。

公开(公告)号：US20130198440A1

公开(公告)日：2013-08-01

申请号：US13746640

申请日：2013-01-22

申请人： Eun Chu OH ,  Jaehong KIM ,  Jongha KIM ,  Junjin KONG

发明人： Eun Chu OH ,  Jaehong KIM ,  Jongha KIM ,  Junjin KONG

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641 ,  G11C2211/5646 ,  H01L27/11582

摘要： In one embodiment, the method includes overwriting a memory cell storing m-bit data to store n-bit data, where n is less than or equal to m. The memory cell has one of a first plurality of program states when storing the m-bit data, and the memory cell has one of a second plurality of program states when storing the n-bit data. The second plurality of program states include at least one program state not in the first plurality of program states.

摘要翻译： 在一个实施例中，该方法包括重写存储m位数据以存储n位数据的存储单元，其中n小于或等于m。 当存储m位数据时，存储单元具有第一多个程序状态之一，并且当存储n位数据时存储单元具有第二多个程序状态之一。 第二多个程序状态包括不在第一多个程序状态中的至少一个程序状态。

公开(公告)号：US08891300B2

公开(公告)日：2014-11-18

申请号：US13746640

申请日：2013-01-22

申请人： Eun Chu Oh ,  Jaehong Kim ,  Jongha Kim ,  Junjin Kong

发明人： Eun Chu Oh ,  Jaehong Kim ,  Jongha Kim ,  Junjin Kong

IPC分类号： G11C16/04 ,  G06F12/02 ,  G11C11/56 ,  G11C16/10 ,  H01L27/115

CPC分类号： G06F12/0246 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641 ,  G11C2211/5646 ,  H01L27/11582

摘要： In one embodiment, the method includes overwriting a memory cell storing m-bit data to store n-bit data, where n is less than or equal to m. The memory cell has one of a first plurality of program states when storing the m-bit data, and the memory cell has one of a second plurality of program states when storing the n-bit data. The second plurality of program states include at least one program state not in the first plurality of program states.

摘要翻译： 在一个实施例中，该方法包括重写存储m位数据以存储n位数据的存储单元，其中n小于或等于m。 当存储m位数据时，存储单元具有第一多个程序状态之一，并且当存储n位数据时存储单元具有第二多个程序状态之一。 第二多个程序状态包括不在第一多个程序状态中的至少一个程序状态。