公开(公告)号：US20100276189A1

公开(公告)日：2010-11-04

申请号：US12772385

申请日：2010-05-03

申请人： Eun seok Song ,  Hee seok Lee ,  Hyun-a Kim ,  So-young Lim

发明人： Eun seok Song ,  Hee seok Lee ,  Hyun-a Kim ,  So-young Lim

IPC分类号： H05K1/18 ,  H05K1/11

CPC分类号： H01L23/50 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48233 ,  H01L2224/48235 ,  H01L2224/48237 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a method of multiple-bit programming of a three-dimensional memory device having arrays of memory cells that extend in horizontal and vertical directions relative to a substrate, the method comprises first programming a memory cell to be programmed to one among a first set of states. At least one neighboring memory cell that neighbors the memory cell to be programmed to one among the first set of states is then first programmed. Following the first programming of the at least one neighboring memory cell, second programming the memory cell to be programmed to one among a second set of states, wherein the second set of states has a number of states that is greater than the number of states in the first set of states.

摘要翻译： 在具有相对于衬底在水平和垂直方向上延伸的存储器单元阵列的三维存储器件的多位编程的方法中，该方法包括首先将要编程的存储器单元编程为第一组 状态。 然后，首先对与第一组状态中的一个相邻的要存储单元相邻的至少一个相邻存储单元进行编程。 在对所述至少一个相邻存储器单元进行第一编程之后，将要编程的存储器单元的第二编程为第二组状态之一，其中所述第二组状态具有大于所述状态数 第一套状态。

公开(公告)号：US08502084B2

公开(公告)日：2013-08-06

申请号：US12772385

申请日：2010-05-03

申请人： Eun seok Song ,  Hee seok Lee ,  Hyun-a Kim ,  So-young Lim

发明人： Eun seok Song ,  Hee seok Lee ,  Hyun-a Kim ,  So-young Lim

IPC分类号： H05K1/11

CPC分类号： H01L23/50 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48233 ,  H01L2224/48235 ,  H01L2224/48237 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor chip carrier having multiple conductive layers separated from each other by dielectric layers, a chip bonding position at an intermediate portion of a top surface of the semiconductor chip carrier, and a bonding region spaced apart from the chip bonding position. The bonding region includes a first bonding region closest to the chip bonding position, a second bonding region most distant from the chip bonding position, and a third bonding region positioned between the first bonding region and the second bonding region. The first bonding region, the second bonding region and the third bonding region are electrically insulated from each other and the first bonding region is configured to carry a first voltage, the second bonding region is configured to carry a second voltage and the third bonding region is configured to carry a third voltage that is less than the first voltage and less than the second voltage.

摘要翻译： 一种半导体芯片载体，其具有通过电介质层彼此分离的多个导电层，在半导体芯片载体的上表面的中间部分处的芯片接合位置以及与芯片接合位置间隔开的接合区域。 接合区域包括最靠近芯片接合位置的第一接合区域，最靠近芯片接合位置的第二接合区域和位于第一接合区域和第二接合区域之间的第三接合区域。 第一接合区域，第二接合区域和第三接合区域彼此电绝缘，并且第一接合区域被配置为承载第一电压，第二接合区域被配置为承载第二电压，并且第三接合区域是 被配置为承载小于所述第一电压并小于所述第二电压的第三电压。