公开(公告)号：US12119321B2

公开(公告)日：2024-10-15

申请号：US17947536

申请日：2022-09-19

Applicant: EPISTAR CORPORATION

Inventor： Shih-An Liao ,  Shau-Yi Chen ,  Ming-Chi Hsu ,  Chun-Hung Liu ,  Min-Hsun Hsieh

IPC: H01L23/48 ,  H01L23/00 ,  H01L33/62 ,  H01L33/30 ,  H01L33/64

CPC classification number: H01L24/16 ,  H01L24/06 ,  H01L24/13 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L33/62 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L33/30 ,  H01L33/647 ,  H01L2224/04105 ,  H01L2224/0612 ,  H01L2224/13309 ,  H01L2224/13311 ,  H01L2224/13313 ,  H01L2224/13339 ,  H01L2224/13499 ,  H01L2224/16058 ,  H01L2224/16105 ,  H01L2224/16227 ,  H01L2224/165 ,  H01L2224/2929 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2939 ,  H01L2224/294 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83886 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/12041 ,  H01L2924/15156 ,  H01L2224/29344 ,  H01L2924/00014 ,  H01L2224/29347 ,  H01L2924/00014 ,  H01L2224/29324 ,  H01L2924/00014 ,  H01L2224/29355 ,  H01L2924/00014 ,  H01L2224/29339 ,  H01L2924/00014 ,  H01L2224/29313 ,  H01L2924/00014 ,  H01L2224/29309 ,  H01L2924/00014 ,  H01L2224/29311 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2224/29311 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/2939 ,  H01L2924/00014 ,  H01L2224/294 ,  H01L2924/00014 ,  H01L2224/83203 ,  H01L2924/00012

Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

公开(公告)号：US12090579B2

公开(公告)日：2024-09-17

申请号：US17856765

申请日：2022-07-01

Applicant: INDIUM CORPORATION

Inventor： Weiping Liu ,  Ning-Cheng Lee

IPC: C22C13/00 ,  B23K35/26 ,  C22C13/02 ,  H01L23/00

CPC classification number: B23K35/262 ,  C22C13/00 ,  C22C13/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/1131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/81815 ,  H01L2224/83815 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/29111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/014 ,  H01L2224/29111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/014

Abstract: A SnAgCuSbBi-based Pb-free solder alloy is disclosed. The disclosed solder alloy is particularly suitable for, but not limited to, producing solder joints, in the form of solder preforms, solder balls, solder powder, or solder paste (a mixture of solder powder and flux), for harsh environment electronics.

公开(公告)号：US11990435B2

公开(公告)日：2024-05-21

申请号：US17867287

申请日：2022-07-18

Applicant: Amkor Technology Singapore Holding Pte. Ltd.

Inventor： Sung Sun Park ,  Ji Young Chung ,  Christopher Berry

IPC: G06V40/13 ,  B81C3/00 ,  H01L23/00 ,  H01L23/053 ,  H01L23/31

CPC classification number: H01L24/05 ,  B81C3/00 ,  G06V40/13 ,  G06V40/1329 ,  H01L23/053 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27622 ,  H01L2224/2784 ,  H01L2224/29006 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29299 ,  H01L2224/2939 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81471 ,  H01L2224/81484 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/014 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/1146 ,  H01L2924/00014 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/11849 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03464 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/0347 ,  H01L2924/00014 ,  H01L2224/1147 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01074 ,  H01L2224/05671 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01028 ,  H01L2224/0361 ,  H01L2924/00014 ,  H01L2224/119 ,  H01L2224/034 ,  H01L2224/1147 ,  H01L2224/034 ,  H01L2224/114 ,  H01L2224/0361 ,  H01L2224/13294 ,  H01L2924/00014 ,  H01L2224/133 ,  H01L2924/014 ,  H01L2224/81203 ,  H01L2924/00014 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/2929 ,  H01L2924/0665 ,  H01L2224/2919 ,  H01L2924/07025 ,  H01L2224/2929 ,  H01L2924/07025 ,  H01L2224/2919 ,  H01L2924/069 ,  H01L2224/2929 ,  H01L2924/069 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/83101 ,  H01L2924/00014 ,  H01L2224/9211 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/29294 ,  H01L2924/00014 ,  H01L2224/2939 ,  H01L2924/00014 ,  H01L2224/29299 ,  H01L2924/00014 ,  H01L2224/27622 ,  H01L2924/00014 ,  H01L2224/2732 ,  H01L2924/00014 ,  H01L2224/27312 ,  H01L2924/00014 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81424 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/8146 ,  H01L2924/00014 ,  H01L2224/81439 ,  H01L2924/00014 ,  H01L2224/81464 ,  H01L2924/00014 ,  H01L2224/81484 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81466 ,  H01L2924/00014 ,  H01L2224/81471 ,  H01L2924/00014 ,  H01L2224/8185 ,  H01L2924/00012 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

公开(公告)号：US20240065002A1

公开(公告)日：2024-02-22

申请号：US18231341

申请日：2023-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyu Kim ,  Joonsung Kim ,  Inhyung Song ,  Yeonho Jang

IPC: H10B80/00 ,  H01L25/18 ,  H01L23/00 ,  H01L25/00

CPC classification number: H10B80/00 ,  H01L25/18 ,  H01L24/20 ,  H01L25/50 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/19 ,  H01L2224/96 ,  H01L2224/214 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01082 ,  H01L24/32 ,  H01L2224/32145 ,  H01L24/33 ,  H01L2224/33181 ,  H01L24/73 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/17181 ,  H01L24/16 ,  H01L24/17 ,  H01L24/05 ,  H01L24/06 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/16145

Abstract: A semiconductor device including a first lower buffer chip, an upper buffer chip disposed on an upper surface of the first lower buffer chip, a plurality of conductive posts spaced apart from the first lower buffer chip and disposed on a lower surface of the upper buffer chip, and a first memory chip stack structure disposed on the upper buffer chip and including a plurality of first memory chips.

公开(公告)号：US11855025B2

公开(公告)日：2023-12-26

申请号：US16687089

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chita Chuang ,  Yao-Chun Chuang ,  Tsung-Shu Lin ,  Chen-Cheng Kuo ,  Chen-Shien Chen

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L23/3192 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05541 ,  H01L2224/05552 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/1147 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13005 ,  H01L2224/1308 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/16237 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/206 ,  H01L2924/381 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05181 ,  H01L2924/00014 ,  H01L2224/05186 ,  H01L2924/04941 ,  H01L2224/05186 ,  H01L2924/04953 ,  H01L2224/05005 ,  H01L2924/206 ,  H01L2224/05541 ,  H01L2924/206 ,  H01L2224/05647 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01079 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/01073 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01025 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01022 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01032 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01078 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01012 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/0104 ,  H01L2924/00014 ,  H01L2224/1145 ,  H01L2924/00014 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/11464 ,  H01L2924/00014 ,  H01L2224/13005 ,  H01L2924/206 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2224/13164 ,  H01L2924/00014 ,  H01L2224/13169 ,  H01L2924/00014 ,  H01L2224/13109 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/00014 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/181 ,  H01L2924/00

Abstract: A semiconductor device includes a conductive pad having a first width. The semiconductor device includes a passivation layer over the conductive pad, wherein the passivation layer directly contacts the conductive pad. The semiconductor device includes a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The semiconductor device includes an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The semiconductor device includes a conductive pillar on the UBM layer.

公开(公告)号：US11764185B2

公开(公告)日：2023-09-19

申请号：US17462573

申请日：2021-08-31

Applicant: Infineon Technologies Austria AG

Inventor： Kirill Trunov ,  Thomas Hendrix

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/13 ,  H01L2224/13201 ,  H01L2224/13205 ,  H01L2224/13209 ,  H01L2224/13211 ,  H01L2224/13213 ,  H01L2224/13218 ,  H01L2224/81825 ,  H01L2924/0103 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01031 ,  H01L2924/01048 ,  H01L2924/01049 ,  H01L2924/01083

Abstract: A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.

公开(公告)号：US20180236609A1

公开(公告)日：2018-08-23

申请号：US15960463

申请日：2018-04-23

Applicant: INTEL CORPORATION

Inventor： Rajen S. SIDHU ,  Martha A. DUDEK ,  James C. MATAYABAS, JR. ,  Michelle S. PHEN-GIVONI ,  Wei TAN

IPC: B23K35/02 ,  H01L23/00 ,  B23K35/362 ,  H05K3/34 ,  H01L23/488 ,  H01L21/48 ,  H01L23/498

CPC classification number: B23K35/025 ,  B23K35/362 ,  H01L21/4853 ,  H01L23/488 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0381 ,  H01L2224/03828 ,  H01L2224/03829 ,  H01L2224/03849 ,  H01L2224/0401 ,  H01L2224/05794 ,  H01L2224/058 ,  H01L2224/05809 ,  H01L2224/05811 ,  H01L2224/05813 ,  H01L2224/05817 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/11334 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/3511 ,  H01L2924/3841 ,  H05K3/3489 ,  H05K2203/041 ,  H05K2203/046 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01105 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01083

Abstract: Flux formulations and solder attachment during the fabrication of electronic device assemblies are described. One flux formation includes a flux component and a metal particle component, the metal particle component being present in an amount of from 5 to 35 volume percent of the flux formulation. In one feature of certain embodiments, the metal particle component includes solder particles. Other embodiments are described and claimed.

公开(公告)号：US10056322B2

公开(公告)日：2018-08-21

申请号：US15278900

申请日：2016-09-28

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Koji Imayoshi ,  Syuji Kiuchi

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01028 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/1579 ,  H01L2924/00

Abstract: An interposer which can better prevent detachment of a conductive layer pattern due to thermal expansion and thermal contraction. The interposer includes a substrate having a through hole; an insulative resin layer formed on a surface of the substrate and including a conductive via; a wiring layer disposed on the substrate with the insulative resin layer interposed therebetween; an inorganic adhesive layer formed only on a side surface of the through hole; and a through electrode filled in a connection hole which is formed by the inorganic adhesive layer in the through hole so as to penetrate between both surfaces of the substrate, wherein the through electrode is electrically connected to the wiring layer via the conductive via, and a thermal expansion coefficient of the inorganic adhesive layer is larger than a thermal expansion coefficient of the substrate and smaller than a thermal expansion coefficient of the through electrode.

公开(公告)号：US10014235B2

公开(公告)日：2018-07-03

申请号：US15124002

申请日：2015-02-20

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Hiroyuki Hanazono ,  Akihiro Fukui

IPC: H01L23/29 ,  H01L21/56 ,  H01L21/683 ,  H01L25/065 ,  C09J7/00 ,  H01L25/00 ,  C09J7/24 ,  C08L63/00 ,  C08L101/12 ,  H01L23/00

CPC classification number: H01L23/29 ,  C09J7/24 ,  C09J2203/326 ,  C09J2433/006 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27002 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81127 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83127 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/0635 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2924/01006 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2221/68304 ,  H01L21/78 ,  H01L2221/68386 ,  H01L21/304 ,  H01L2221/68368

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt−Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from −50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from −50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

公开(公告)号：US20180076162A1

公开(公告)日：2018-03-15

申请号：US15804478

申请日：2017-11-06

Applicant: International Business Machines Corporation

Inventor： Akihiro HORIBE ,  Keiji MATSUMOTO ,  Keishi OKAMOTO ,  Kazushige TORIYAMA

IPC: H01L23/00 ,  H01L25/00 ,  B23K3/06 ,  H01L23/522 ,  H01L23/498 ,  H01L23/34 ,  H01L21/768 ,  H01L21/48 ,  H01L25/065 ,  H01L23/488 ,  H01L23/48

CPC classification number: H01L24/13 ,  B23K3/0623 ,  H01L21/4867 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/34 ,  H01L23/345 ,  H01L23/481 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/49894 ,  H01L23/5226 ,  H01L24/08 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/11013 ,  H01L2224/1131 ,  H01L2224/11312 ,  H01L2224/11416 ,  H01L2224/1148 ,  H01L2224/11618 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/14051 ,  H01L2224/16111 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17519 ,  H01L2224/27 ,  H01L2224/27416 ,  H01L2224/27515 ,  H01L2224/27618 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29076 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/12042 ,  H01L2924/3512 ,  H01L2924/37001 ,  H01L2924/3841 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01026 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00013 ,  H01L2924/00012

Abstract: Highly reliable chip mounting is accomplished by using a substrate having such a shape that a stress exerted on a flip-chip-connected chip can be reduced, so that the stress exerted on the chip is reduced and separation of an interlayer insulating layer having a low dielectric constant (low-k) is minimized. Specifically, in a chip mounting structure, a chip including an interlayer insulating layer having a low dielectric constant (low-k) is flip-chip connected to a substrate via bumps is shown. In the chip mounting structure, the substrate has such a shape that a mechanical stress exerted on the interlayer insulating layer at corner portions of the chip due to a thermal stress is reduced, the thermal stress occurring due to a difference in coefficient of thermal expansion between the chip and the substrate.