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19 条记录 (耗时 0.035 秒)

    Film bulk acoustic resonator filter and duplexer
    1.
    发明申请
    Film bulk acoustic resonator filter and duplexer 有权
    薄膜体声波谐振器滤波器和双工器

    公开(公告)号：US20080100397A1

    公开(公告)日：2008-05-01

    申请号：US11808066

    申请日：2007-06-06

    申请人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    发明人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    IPC分类号： H03H9/72 ,  H03H9/60

    CPC分类号： H03H9/706

    摘要： A film bulk acoustic resonator (FBAR) filter and a duplexer are disclosed. At least one series resonator is positioned between an input port for inputting a frequency signal and an output port for outputting a frequency signal, at least two shunt resonators respectively positioned between the input and output ports and a ground, a first trimming inductor connects the at least two shunt resonators and the ground, and a second trimming inductor is positioned between the at least two shunt resonators.

    摘要翻译： 公开了一种薄膜体声共振器（FBAR）滤波器和双工器。 至少一个串联谐振器位于用于输入频率信号的输入端口和用于输出频率信号的输出端口之间，分别位于输入和输出端口之间的至少两个并联谐振器和接地，第一微调电感器将at 至少两个并联谐振器和地，并且第二微调电感器位于所述至少两个并联谐振器之间。

    Integrated device and fabricating method thereof
    2.
    发明授权
    Integrated device and fabricating method thereof 有权
    集成器件及其制造方法

    公开(公告)号：US07701312B2

    公开(公告)日：2010-04-20

    申请号：US11812878

    申请日：2007-06-22

    申请人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    发明人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    IPC分类号： H03H9/00

    CPC分类号： H03H3/04 ,  H03H9/0547 ,  H03H9/174 ,  Y10T29/42

    摘要： An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

    摘要翻译： 通过集成FBAR和可调电容器构成集成器件。 集成器件包括衬底; 形成在所述基板上的谐振器; 形成在与所述谐振器分离的所述基板上的驱动电极层; 从衬底向上分离并面向谐振器的第一电极层; 以及第二电极层，该第二电极层从衬底向上形成并面对驱动电极层，第二电极层从第一电极层阶梯形。 因此，集成器件可以增加调谐范围并减小寄生电阻。

    Integrated device and fabricating method thereof
    4.
    发明申请
    Integrated device and fabricating method thereof 有权
    集成器件及其制造方法

    公开(公告)号：US20080116999A1

    公开(公告)日：2008-05-22

    申请号：US11812878

    申请日：2007-06-22

    申请人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    发明人： Eun-seok Park ,  Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-Kwon Park

    IPC分类号： H03H9/54 ,  H01L41/22

    CPC分类号： H03H3/04 ,  H03H9/0547 ,  H03H9/174 ,  Y10T29/42

    摘要： An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

    摘要翻译： 通过集成FBAR和可调电容器构成集成器件。 集成器件包括衬底; 形成在所述基板上的谐振器; 形成在与所述谐振器分离的所述基板上的驱动电极层; 从衬底向上分离并面向谐振器的第一电极层; 以及第二电极层，该第二电极层从衬底向上形成并面对驱动电极层，第二电极层从第一电极层阶梯形。 因此，集成器件可以增加调谐范围并减小寄生电阻。

    Film bulk acoustic resonator filter and duplexer
    6.
    发明授权
    Film bulk acoustic resonator filter and duplexer 有权
    薄膜体声波谐振器滤波器和双工器

    公开(公告)号：US07830226B2

    公开(公告)日：2010-11-09

    申请号：US11808066

    申请日：2007-06-06

    申请人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    发明人： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Chul-soo Kim ,  Eun-seok Park

    IPC分类号： H03H9/70 ,  H03H9/54

    CPC分类号： H03H9/706

    摘要： A film bulk acoustic resonator (FBAR) filter and a duplexer are disclosed. At least one series resonator is positioned between an input port for inputting a frequency signal and an output port for outputting a frequency signal, at least two shunt resonators respectively positioned between the input and output ports and a ground, a first trimming inductor connects the at least two shunt resonators and the ground, and a second trimming inductor is positioned between the at least two shunt resonators.

    摘要翻译： 公开了一种薄膜体声共振器（FBAR）滤波器和双工器。 至少一个串联谐振器位于用于输入频率信号的输入端口和用于输出频率信号的输出端口之间，分别位于输入和输出端口之间的至少两个并联谐振器和接地，第一微调电感器将at 至少两个并联谐振器和地，并且第二微调电感器位于所述至少两个并联谐振器之间。

    Micro antenna and method of manufacturing the same
    8.
    发明授权
    Micro antenna and method of manufacturing the same 失效
    微天线及其制造方法

    公开(公告)号：US07926165B2

    公开(公告)日：2011-04-19

    申请号：US11712526

    申请日：2007-03-01

    申请人： Young-tack Hong ,  Moon-chul Lee ,  In-sang Song ,  Sang-wook Kwon ,  Chang-won Jung ,  Eun-seok Park

    发明人： Young-tack Hong ,  Moon-chul Lee ,  In-sang Song ,  Sang-wook Kwon ,  Chang-won Jung ,  Eun-seok Park

    IPC分类号： H01P11/00 ,  H01Q13/00 ,  H01Q17/00 ,  H01Q1/36 ,  H05K3/36 ,  H01K3/10

    CPC分类号： H01Q1/2283 ,  H01F17/0033 ,  H01F41/041 ,  H01Q1/362 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49126 ,  Y10T29/49165

    摘要： A method of manufacturing a micro antenna is provided. The method includes forming a plurality of holes penetrating a first substrate, filling each of the plurality of holes with a conductive material to form a plurality of vertical conducting parts, forming a plurality of horizontal conducting parts on each of two different surfaces of the first substrate, wherein the each of the horizontal conducting parts is electrically connected to the corresponding vertical conducting parts, bonding the first substrate, on which the vertical conducting parts and the horizontal conducting parts have been formed, to a second substrate, and removing the first substrate to expose a whole structure of a 3D micro antenna which is formed on the second substrate and includes the vertical conducting parts and the horizontal conducting parts connected to each other.

    摘要翻译： 提供一种制造微型天线的方法。 该方法包括：形成穿过第一基板的多个孔，用导电材料填充多个孔中的每个孔，以形成多个垂直导电部分，在第一基板的两个不同表面的每一个上形成多个水平导电部件 其中，每个水平导电部分电连接到相应的垂直导电部分，将其上形成有垂直导电部分和水平导电部分的第一基板接合到第二基板，并且将第一基板去除 露出形成在第二基板上的3D微型天线的整体结构，并且包括彼此连接的垂直导电部分和水平导电部件。