中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.014 seconds)

    MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE
    3.
    发明申请
    MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 有权
    MRAM合成ANITFEROMAGNET结构

    公开(公告)号：US20140021471A1

    公开(公告)日：2014-01-23

    申请号：US13925590

    申请日：2013-06-24

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu W. Dave ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/10

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

    Abstract translation: MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定 磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层 容易和坚硬的轴。

    MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure
    6.
    发明授权
    MRAM having an unpinned, fixed synthetic anti-ferromagnetic structure 有权
    MRAM具有未固定的，固定的合成反铁磁结构

    公开(公告)号：US09391264B2

    公开(公告)日：2016-07-12

    申请号：US14727910

    申请日：2015-06-02

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit includes a free magnetic region, a fixed magnetic region comprising an anti-ferromagnetic material, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt, (ii) a second layer of one or more ferromagnetic materials wherein the one or more ferromagnetic materials includes cobalt, (iii) a third layer of one or more ferromagnetic materials, and an anti-ferromagnetic coupling layer, wherein: (a) the anti-ferromagnetic coupling layer is disposed between the first and third layers, and (b) the second layer is disposed between the first layer and the anti-ferromagnetic coupling layer.

    Abstract translation: MRAM位包括自由磁区，包括反铁磁材料的固定磁区和位于自由磁区与固定磁区之间的电介质层。 在一个方面，固定磁区基本上由未固定的固定合成反铁磁（SAF）结构组成，其包括（i）一个或多个铁磁材料的第一层，其中一个或多个铁磁材料包括钴，（ii ）一种或多种铁磁材料的第二层，其中所述一种或多种铁磁材料包括钴，（iii）一种或多种铁磁材料的第三层和反铁磁性耦合层，其中：（a）所述反铁磁性材料 耦合层设置在第一和第三层之间，（b）第二层设置在第一层和反铁磁性耦合层之间。

    MRAM synthetic anitferomagnet structure
    7.
    发明授权
    MRAM synthetic anitferomagnet structure 有权
    MRAM合成非铁磁结构

    公开(公告)号：US09093637B2

    公开(公告)日：2015-07-28

    申请号：US14303200

    申请日：2014-06-12

    Applicant: Everspin Technologies, Inc.

    Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason A. Janesky ,  Nicholas D. Rizzo ,  Jon M. Slaughter

    IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

    Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

    Abstract translation: MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定 磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层 容易和坚硬的轴。

    Magnetoresistive stack, seed region thereof and method of manufacturing same
    10.
    发明授权
    Magnetoresistive stack, seed region thereof and method of manufacturing same 有权

    公开(公告)号：US10141498B2

    公开(公告)日：2018-11-27

    申请号：US15373880

    申请日：2016-12-09

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jon M. Slaughter ,  Han-Jong Chia

    IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

Patent Agency Ranking